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Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior

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Abstract
Low-frequency noise is used to estimate the quality of the gate stack for planar Ge nMOSFETs with different effective work function metals and cap layers. It is shown that replacing TiN by a TiAl-based metal gate will induce a significant decline of the threshold voltage V-T and noise power spectral density, indicating the introduction of Al will induce an advantageous effect on the trap density in the underlying HfO2. Meanwhile, the application of a LaOx cap tends to reduce V-T and the trap density in the gate oxide, which could attribute to the La in-diffusion in the gate stack. The 1/f noise analysis shows that the noise could mainly be associated with number fluctuations and correlated mobility fluctuations.
Keywords
1/f noise, cap layer, effective work function (EWF), Ge nMOSFETs, EFFECTIVE WORK FUNCTION, DEVICE PERFORMANCE, 1/F NOISE, N-MOSFETS, INTERFACE, IMPACT, SILICON, PMOSFETS, DENSITY, GROWTH

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MLA
He, Liang et al. “Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior.” IEEE Transactions on Electron Devices 66.2 (2019): 1050–1056. Print.
APA
He, L., Zhao, P., Liu, J., Su, Y., Chen, H., Jia, X., Arimura, H., et al. (2019). Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior. IEEE Transactions on Electron Devices, 66(2), 1050–1056.
Chicago author-date
He, Liang, Pan Zhao, Jiahao Liu, Yahui Su, Hua Chen, Xiaofei Jia, Hiroaki Arimura, et al. 2019. “Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior.” IEEE Transactions on Electron Devices 66 (2): 1050–1056.
Chicago author-date (all authors)
He, Liang, Pan Zhao, Jiahao Liu, Yahui Su, Hua Chen, Xiaofei Jia, Hiroaki Arimura, Jerome Mitard, Liesbet Witters, Naoto Horiguchi, Nadine Collaert, Cor Claeys, and Eddy Simoen. 2019. “Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior.” IEEE Transactions on Electron Devices 66 (2): 1050–1056.
Vancouver
1.
He L, Zhao P, Liu J, Su Y, Chen H, Jia X, et al. Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior. IEEE Transactions on Electron Devices. Institute of Electrical and Electronics Engineers (IEEE); 2019;66(2):1050–6.
IEEE
[1]
L. He et al., “Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior,” IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 1050–1056, 2019.
@article{8619886,
  abstract     = {Low-frequency noise is used to estimate the quality of the gate stack for planar Ge nMOSFETs with different effective work function metals and cap layers. It is shown that replacing TiN by a TiAl-based metal gate will induce a significant decline of the threshold voltage V-T and noise power spectral density, indicating the introduction of Al will induce an advantageous effect on the trap density in the underlying HfO2. Meanwhile, the application of a LaOx cap tends to reduce V-T and the trap density in the gate oxide, which could attribute to the La in-diffusion in the gate stack. The 1/f noise analysis shows that the noise could mainly be associated with number fluctuations and correlated mobility fluctuations.},
  author       = {He, Liang and Zhao, Pan and Liu, Jiahao and Su, Yahui and Chen, Hua and Jia, Xiaofei and Arimura, Hiroaki and Mitard, Jerome and Witters, Liesbet and Horiguchi, Naoto and Collaert, Nadine and Claeys, Cor and Simoen, Eddy},
  issn         = {0018-9383},
  journal      = {IEEE Transactions on Electron Devices},
  keywords     = {1/f noise,cap layer,effective work function (EWF),Ge nMOSFETs,EFFECTIVE WORK FUNCTION,DEVICE PERFORMANCE,1/F NOISE,N-MOSFETS,INTERFACE,IMPACT,SILICON,PMOSFETS,DENSITY,GROWTH},
  language     = {eng},
  number       = {2},
  pages        = {1050--1056},
  publisher    = {Institute of Electrical and Electronics Engineers (IEEE)},
  title        = {Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior},
  url          = {http://dx.doi.org/10.1109/ted.2018.2883529},
  volume       = {66},
  year         = {2019},
}

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