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Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates

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Abstract
In this paper, the carrier transport mechanisms in AlN nucleation layers grown by MOCVD on p-Si and p-silicon-on-insulator (SOI) substrates were investigated by using electrical characterizations at various electric fields and temperatures on Ni-Au/AlN/Si metal-insulator-semiconductor capacitors. For the case of the AlN on Si substrate, different contact schemes, i.e., top-bottom versus top-top, have been compared. It was found by capacitance-voltage measurements that an inversion channel related to the Shockley-Read-Hall (SRH) minority carrier generation in the silicon bulk and SOI substrates was formed. It showed that the AlN on p-SOI platform exhibited the same leakage mechanisms as for the AlN on the Si substrate. The contact scheme mainly affects the low forward and reverse bias characteristics, by adding a surface leakage contribution. At increasing the forward (positive) gate bias, the carrier transport process becomes in turn ohmic, variable-range hopping, SRH generation, and Fowler-Nordheim (FN) direct tunneling. Moreover, at the reverse bias, the carrier transportation is in turn dominated by the Schottky emission, Poole-Frenkel(PF) conduction, and FN direct tunneling with increasing bias.
Keywords
AlN nucleation layer, leakage mechanism, p-Si, p-silicon-on-insulator (SOI), SILICON-ON-INSULATOR, CARRIER TRANSPORT, GAN, SI(111), GROWTH, HEMTS, CONDUCTION

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MLA
Zhang, Weihang, et al. “Analysis of Leakage Mechanisms in AlN Nucleation Layers on P-Si and p-SOI Substrates.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, no. 4, 2019, pp. 1849–55.
APA
Zhang, W., Simoen, E., Zhao, M., & Zhang, J. (2019). Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(4), 1849–1855.
Chicago author-date
Zhang, Weihang, Eddy Simoen, Ming Zhao, and Jincheng Zhang. 2019. “Analysis of Leakage Mechanisms in AlN Nucleation Layers on P-Si and p-SOI Substrates.” IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (4): 1849–55.
Chicago author-date (all authors)
Zhang, Weihang, Eddy Simoen, Ming Zhao, and Jincheng Zhang. 2019. “Analysis of Leakage Mechanisms in AlN Nucleation Layers on P-Si and p-SOI Substrates.” IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (4): 1849–1855.
Vancouver
1.
Zhang W, Simoen E, Zhao M, Zhang J. Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2019;66(4):1849–55.
IEEE
[1]
W. Zhang, E. Simoen, M. Zhao, and J. Zhang, “Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, no. 4, pp. 1849–1855, 2019.
@article{8619821,
  abstract     = {In this paper, the carrier transport mechanisms in AlN nucleation layers grown by MOCVD on p-Si and p-silicon-on-insulator (SOI) substrates were investigated by using electrical characterizations at various electric fields and temperatures on Ni-Au/AlN/Si metal-insulator-semiconductor capacitors. For the case of the AlN on Si substrate, different contact schemes, i.e., top-bottom versus top-top, have been compared. It was found by capacitance-voltage measurements that an inversion channel related to the Shockley-Read-Hall (SRH) minority carrier generation in the silicon bulk and SOI substrates was formed. It showed that the AlN on p-SOI platform exhibited the same leakage mechanisms as for the AlN on the Si substrate. The contact scheme mainly affects the low forward and reverse bias characteristics, by adding a surface leakage contribution. At increasing the forward (positive) gate bias, the carrier transport process becomes in turn ohmic, variable-range hopping, SRH generation, and Fowler-Nordheim (FN) direct tunneling. Moreover, at the reverse bias, the carrier transportation is in turn dominated by the Schottky emission, Poole-Frenkel(PF) conduction, and FN direct tunneling with increasing bias.},
  author       = {Zhang, Weihang and Simoen, Eddy and Zhao, Ming and Zhang, Jincheng},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {AlN nucleation layer,leakage mechanism,p-Si,p-silicon-on-insulator (SOI),SILICON-ON-INSULATOR,CARRIER TRANSPORT,GAN,SI(111),GROWTH,HEMTS,CONDUCTION},
  language     = {eng},
  number       = {4},
  pages        = {1849--1855},
  title        = {Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates},
  url          = {http://dx.doi.org/10.1109/ted.2019.2899964},
  volume       = {66},
  year         = {2019},
}

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