Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
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- A. Tajalli, E. Canato, A. Nardo, M. Meneghini, Arno Stockman (UGent) , Peter Moens, E. Zanoni and G. Meneghesso
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8617778
- MLA
- Tajalli, A., et al. “Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors.” 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE, 2019, doi:10.1109/irps.2019.8720445.
- APA
- Tajalli, A., Canato, E., Nardo, A., Meneghini, M., Stockman, A., Moens, P., … Meneghesso, G. (2019). Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). Presented at the IEEE International Reliability Physics Symposium (IRPS), Monterey, CA. https://doi.org/10.1109/irps.2019.8720445
- Chicago author-date
- Tajalli, A., E. Canato, A. Nardo, M. Meneghini, Arno Stockman, Peter Moens, E. Zanoni, and G. Meneghesso. 2019. “Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE. https://doi.org/10.1109/irps.2019.8720445.
- Chicago author-date (all authors)
- Tajalli, A., E. Canato, A. Nardo, M. Meneghini, Arno Stockman, Peter Moens, E. Zanoni, and G. Meneghesso. 2019. “Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE. doi:10.1109/irps.2019.8720445.
- Vancouver
- 1.Tajalli A, Canato E, Nardo A, Meneghini M, Stockman A, Moens P, et al. Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. In: 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE; 2019.
- IEEE
- [1]A. Tajalli et al., “Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors,” in 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), Monterey, CA, 2019.
@inproceedings{8617778,
author = {{Tajalli, A. and Canato, E. and Nardo, A. and Meneghini, M. and Stockman, Arno and Moens, Peter and Zanoni, E. and Meneghesso, G.}},
booktitle = {{2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)}},
isbn = {{9781538695043}},
issn = {{1541-7026}},
language = {{eng}},
location = {{Monterey, CA}},
publisher = {{IEEE}},
title = {{Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors}},
url = {{http://dx.doi.org/10.1109/irps.2019.8720445}},
year = {{2019}},
}
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