Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
- Author
- A. Tajalli, E. Canato, A. Nardo, M. Meneghini, Arno Stockman (UGent) , Pieter Moens (UGent) , E. Zanoni and G. Meneghesso
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8617778
- Chicago
- Tajalli, A., E. Canato, A. Nardo, M. Meneghini, Arno Stockman, Pieter Moens, E. Zanoni, and G. Meneghesso. 2019. “Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-mode Transistors .” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) IEEE.
- APA
- Tajalli, A., Canato, E., Nardo, A., Meneghini, M., Stockman, A., Moens, P., Zanoni, E., et al. (2019). Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors . 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) . Presented at the IEEE International Reliability Physics Symposium (IRPS) , IEEE.
- Vancouver
- 1.Tajalli A, Canato E, Nardo A, Meneghini M, Stockman A, Moens P, et al. Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors . 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) . IEEE; 2019.
- MLA
- Tajalli, A. et al. “Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-mode Transistors .” 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) . IEEE, 2019. Print.
@inproceedings{8617778,
author = {Tajalli, A. and Canato, E. and Nardo, A. and Meneghini, M. and Stockman, Arno and Moens, Pieter and Zanoni, E. and Meneghesso, G.},
booktitle = {2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) },
isbn = {9781538695043},
issn = {1541-7026 },
language = {eng},
location = {Monterey, CA },
publisher = {IEEE},
title = {Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors },
url = {http://dx.doi.org/10.1109/irps.2019.8720445},
year = {2019},
}
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