Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
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- E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee and P. Moens
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8617770
- MLA
- Canato, E., et al. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE, 2019, doi:10.1109/irps.2019.8720549.
- APA
- Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., … Moens, P. (2019). Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). Presented at the IEEE International Reliability Physics Symposium (IRPS), Monterey, CA. https://doi.org/10.1109/irps.2019.8720549
- Chicago author-date
- Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE. https://doi.org/10.1109/irps.2019.8720549.
- Chicago author-date (all authors)
- Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE. doi:10.1109/irps.2019.8720549.
- Vancouver
- 1.Canato E, Masin F, Borga M, Zanoni E, Meneghini M, Meneghesso G, et al. Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. In: 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE; 2019.
- IEEE
- [1]E. Canato et al., “Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate,” in 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), Monterey, CA, 2019.
@inproceedings{8617770,
articleno = {{8720549}},
author = {{Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, Arno and Banerjee, A. and Moens, P.}},
booktitle = {{2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)}},
isbn = {{9781538695043}},
issn = {{1938-1891}},
language = {{eng}},
location = {{Monterey, CA}},
pages = {{6}},
publisher = {{IEEE}},
title = {{Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate}},
url = {{http://doi.org/10.1109/irps.2019.8720549}},
year = {{2019}},
}
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