$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate
- Author
- E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman (UGent) , A. Banerjee and P. Moens
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8617770
- Chicago
- Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE International Reliability Physics Symposium (IRPS). IEEE.
- APA
- Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Stockman, A., et al. (2019). $\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. 2019 IEEE International Reliability Physics Symposium (IRPS). IEEE.
- Vancouver
- 1.Canato E, Masin F, Borga M, Zanoni E, Meneghini M, Meneghesso G, et al. $\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. 2019 IEEE International Reliability Physics Symposium (IRPS). IEEE; 2019.
- MLA
- Canato, E. et al. “$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” 2019 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2019. Print.
@inproceedings{8617770,
author = {Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, Arno and Banerjee, A. and Moens, P.},
booktitle = {2019 IEEE International Reliability Physics Symposium (IRPS)},
isbn = {9781538695043},
publisher = {IEEE},
title = {$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate},
url = {http://dx.doi.org/10.1109/irps.2019.8720549},
year = {2019},
}
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