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Citation

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MLA
Canato, E. et al. “Mu S-range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE, 2019. Print.
APA
Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Stockman, A., et al. (2019). Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). Presented at the IEEE International Reliability Physics Symposium (IRPS), IEEE.
Chicago author-date
Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE.
Chicago author-date (all authors)
Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE.
Vancouver
1.
Canato E, Masin F, Borga M, Zanoni E, Meneghini M, Meneghesso G, et al. Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE; 2019.
IEEE
[1]
E. Canato et al., “Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate,” in 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), Monterey, CA, 2019.
@inproceedings{8617770,
  articleno    = {8720549},
  author       = {Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, Arno and Banerjee, A. and Moens, P.},
  booktitle    = {2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)},
  isbn         = {9781538695043},
  issn         = {1938-1891},
  language     = {eng},
  location     = {Monterey, CA},
  pages        = {6},
  publisher    = {IEEE},
  title        = {Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate},
  url          = {http://dx.doi.org/10.1109/irps.2019.8720549},
  year         = {2019},
}

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