Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
- Author
- E. Canato, F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman (UGent) , A. Banerjee and P. Moens
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8617770
- MLA
- Canato, E. et al. “Mu S-range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE, 2019. Print.
- APA
- Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Stockman, A., et al. (2019). Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). Presented at the IEEE International Reliability Physics Symposium (IRPS), IEEE.
- Chicago author-date
- Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE.
- Chicago author-date (all authors)
- Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE.
- Vancouver
- 1.Canato E, Masin F, Borga M, Zanoni E, Meneghini M, Meneghesso G, et al. Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE; 2019.
- IEEE
- [1]E. Canato et al., “Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate,” in 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), Monterey, CA, 2019.
@inproceedings{8617770,
articleno = {8720549},
author = {Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, Arno and Banerjee, A. and Moens, P.},
booktitle = {2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)},
isbn = {9781538695043},
issn = {1938-1891},
language = {eng},
location = {Monterey, CA},
pages = {6},
publisher = {IEEE},
title = {Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate},
url = {http://dx.doi.org/10.1109/irps.2019.8720549},
year = {2019},
}
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