Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8617770

MLA

Canato, E., et al. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE, 2019, doi:10.1109/irps.2019.8720549.

APA

Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., … Moens, P. (2019). Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). Monterey, CA: IEEE. https://doi.org/10.1109/irps.2019.8720549

Chicago author-date

Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE. https://doi.org/10.1109/irps.2019.8720549.

Chicago author-date (all authors)

Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE. doi:10.1109/irps.2019.8720549.

Vancouver

1.

Canato E, Masin F, Borga M, Zanoni E, Meneghini M, Meneghesso G, et al. Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. In: 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE; 2019.

IEEE

[1]

E. Canato et al., “Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate,” in 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), Monterey, CA, 2019.