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Citation

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MLA
Canato, E., et al. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE, 2019, doi:10.1109/irps.2019.8720549.
APA
Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., … Moens, P. (2019). Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). Monterey, CA: IEEE. https://doi.org/10.1109/irps.2019.8720549
Chicago author-date
Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE. https://doi.org/10.1109/irps.2019.8720549.
Chicago author-date (all authors)
Canato, E., F. Masin, M. Borga, E. Zanoni, M. Meneghini, G. Meneghesso, Arno Stockman, A. Banerjee, and P. Moens. 2019. “Mu S-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE. doi:10.1109/irps.2019.8720549.
Vancouver
1.
Canato E, Masin F, Borga M, Zanoni E, Meneghini M, Meneghesso G, et al. Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate. In: 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE; 2019.
IEEE
[1]
E. Canato et al., “Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate,” in 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), Monterey, CA, 2019.
@inproceedings{8617770,
  articleno    = {{8720549}},
  author       = {{Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, Arno and Banerjee, A. and Moens, P.}},
  booktitle    = {{2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)}},
  isbn         = {{9781538695043}},
  issn         = {{1938-1891}},
  language     = {{eng}},
  location     = {{Monterey, CA}},
  pages        = {{6}},
  publisher    = {{IEEE}},
  title        = {{Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate}},
  url          = {{http://dx.doi.org/10.1109/irps.2019.8720549}},
  year         = {{2019}},
}

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