Advanced search
1 file | 1.65 MB

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Author
Organization
Keywords
Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 1.65 MB

Citation

Please use this url to cite or link to this publication:

Chicago
Stockman, Arno, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, et al. 2019. “The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-electron-mobility Transistors.” Ieee Transactions on Electron Devices 66 (1): 372–377.
APA
Stockman, Arno, Tajalli, A., Meneghini, M., Uren, M. J., Mouhoubi, S., Gerardin, S., Bagatin, M., et al. (2019). The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES , 66(1), 372–377.
Vancouver
1.
Stockman A, Tajalli A, Meneghini M, Uren MJ, Mouhoubi S, Gerardin S, et al. The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES . Institute of Electrical and Electronics Engineers (IEEE); 2019;66(1):372–7.
MLA
Stockman, Arno et al. “The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-electron-mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES 66.1 (2019): 372–377. Print.
@article{8617768,
  author       = {Stockman, Arno and Tajalli, A. and Meneghini, M. and Uren, M. J. and Mouhoubi, S. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, Benoit},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES },
  keywords     = {Electrical and Electronic Engineering,Electronic,Optical and Magnetic Materials},
  language     = {eng},
  number       = {1},
  pages        = {372--377},
  publisher    = {Institute of Electrical and Electronics Engineers (IEEE)},
  title        = {The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors},
  url          = {http://dx.doi.org/10.1109/ted.2018.2881325},
  volume       = {66},
  year         = {2019},
}

Altmetric
View in Altmetric
Web of Science
Times cited: