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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

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Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

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MLA
Stockman, Arno, et al. “The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2019, pp. 372–77.
APA
Stockman, A., Tajalli, A., Meneghini, M., Uren, M. J., Mouhoubi, S., Gerardin, S., … Bakeroot, B. (2019). The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 372–377.
Chicago author-date
Stockman, Arno, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, et al. 2019. “The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (1): 372–77.
Chicago author-date (all authors)
Stockman, Arno, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, P. Moens, and Benoit Bakeroot. 2019. “The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (1): 372–377.
Vancouver
1.
Stockman A, Tajalli A, Meneghini M, Uren MJ, Mouhoubi S, Gerardin S, et al. The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2019;66(1):372–7.
IEEE
[1]
A. Stockman et al., “The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, no. 1, pp. 372–377, 2019.
@article{8617768,
  author       = {Stockman, Arno and Tajalli, A. and Meneghini, M. and Uren, M. J. and Mouhoubi, S. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, Benoit},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {Electrical and Electronic Engineering,Electronic,Optical and Magnetic Materials},
  language     = {eng},
  number       = {1},
  pages        = {372--377},
  publisher    = {Institute of Electrical and Electronics Engineers (IEEE)},
  title        = {The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors},
  url          = {http://dx.doi.org/10.1109/ted.2018.2881325},
  volume       = {66},
  year         = {2019},
}

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