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Wafer-scale fabrication of sub-10 nm TiO2-Ga2O3 n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition

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Abstract
Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga(2)O(3)n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 degrees C. The best deposition parameters were established. The structure and morphology of 2D TiO2-Ga(2)O(3)n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO2-Ga(2)O(3)n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light ( = 254 nm) irradiation. The improvement of TiO2-Ga(2)O(3)n-p heterostructure capabilities is due to the development of the defects on Ga2O3-TiO2 interface, which were able to trap electrons faster.
Keywords
TiO2-Ga2O3, n-p heterostructures, atomic layer deposition, 2D semiconductors, GALLIUM OXIDE, 2-DIMENSIONAL WO3, BETA-GA2O3, NANOPARTICLES, THIN, DEGRADATION, COMPOSITE, NANORODS, TIO2, PERFORMANCE

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MLA
Xu, Hongyan, et al. “Wafer-Scale Fabrication of Sub-10 Nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition.” NANOSCALE RESEARCH LETTERS, vol. 14, 2019.
APA
Xu, H., Han, F., Xia, C., Wang, S., Karuparambil Ramachandran, R., Detavernier, C., … Zhuiykov, S. (2019). Wafer-scale fabrication of sub-10 nm TiO2-Ga2O3 n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition. NANOSCALE RESEARCH LETTERS, 14.
Chicago author-date
Xu, Hongyan, Feng Han, Chengkai Xia, Siyan Wang, Ranjith Karuparambil Ramachandran, Christophe Detavernier, Minsong Wei, Liwei Lin, and Serge Zhuiykov. 2019. “Wafer-Scale Fabrication of Sub-10 Nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition.” NANOSCALE RESEARCH LETTERS 14.
Chicago author-date (all authors)
Xu, Hongyan, Feng Han, Chengkai Xia, Siyan Wang, Ranjith Karuparambil Ramachandran, Christophe Detavernier, Minsong Wei, Liwei Lin, and Serge Zhuiykov. 2019. “Wafer-Scale Fabrication of Sub-10 Nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition.” NANOSCALE RESEARCH LETTERS 14.
Vancouver
1.
Xu H, Han F, Xia C, Wang S, Karuparambil Ramachandran R, Detavernier C, et al. Wafer-scale fabrication of sub-10 nm TiO2-Ga2O3 n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition. NANOSCALE RESEARCH LETTERS. 2019;14.
IEEE
[1]
H. Xu et al., “Wafer-scale fabrication of sub-10 nm TiO2-Ga2O3 n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition,” NANOSCALE RESEARCH LETTERS, vol. 14, 2019.
@article{8616998,
  abstract     = {Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga(2)O(3)n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 degrees C. The best deposition parameters were established. The structure and morphology of 2D TiO2-Ga(2)O(3)n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO2-Ga(2)O(3)n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light ( = 254 nm) irradiation. The improvement of TiO2-Ga(2)O(3)n-p heterostructure capabilities is due to the development of the defects on Ga2O3-TiO2 interface, which were able to trap electrons faster.},
  articleno    = {163},
  author       = {Xu, Hongyan and Han, Feng and Xia, Chengkai and Wang, Siyan and Karuparambil Ramachandran, Ranjith and Detavernier, Christophe and Wei, Minsong and Lin, Liwei and Zhuiykov, Serge},
  issn         = {1931-7573},
  journal      = {NANOSCALE RESEARCH LETTERS},
  keywords     = {TiO2-Ga2O3,n-p heterostructures,atomic layer deposition,2D semiconductors,GALLIUM OXIDE,2-DIMENSIONAL WO3,BETA-GA2O3,NANOPARTICLES,THIN,DEGRADATION,COMPOSITE,NANORODS,TIO2,PERFORMANCE},
  language     = {eng},
  pages        = {10},
  title        = {Wafer-scale fabrication of sub-10 nm TiO2-Ga2O3 n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition},
  url          = {http://dx.doi.org/10.1186/s11671-019-2991-1},
  volume       = {14},
  year         = {2019},
}

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