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70 Gb/s low-power DC-coupled NRZ differential electro-absorption modulator driver in 55 nm SiGe BiCMOS

(2019) JOURNAL OF LIGHTWAVE TECHNOLOGY. 37(5). p.1504-1514
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Organization
Abstract
We present a 70 Gb/s capable optical transmitter consisting of a 50 mu m long GeSi electro-absorption modulator (integrated in silicon photonics) and a fully differential driver designed in a 55 nm SiGe BiCMOS technology. By properly unbalancing the output stage, the driver can be dc-coupled to the modulator thus avoiding the use of on-chip or external bias-Ts. At a wavelength of 1560 nm, open eye diagrams for 70 Gb/s after transmission over 2 km standard single-mode fiber were demonstrated. The total power consumption is 61 mW, corresponding to 0.87 pJ/b at 70 Gb/s. Bit-error rate measurements at 50 Gb/s and 56 Gb/s (performed both back to back and with up to 2 km standard single-mode fiber) demonstrate large (0.4 UI at a BER of 10(-12)) horizontal eye margins. This optical transmitter is ideally suited for datacenter applications that require densely integrated transceivers with a low power consumption.
Keywords
TRANSMISSION, MW, DC-coupled, differential, driver, EAM, low power, modulator bias

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Chicago
Ramon, Hannes, Joris Lambrecht, Jochem Verbist, Michael Vanhoecke, Srinivasan Ashwyn Srinivasan, Peter De Heyn, Joris Van Campenhout, Peter Ossieur, Xin Yin, and Johan Bauwelinck. 2019. “70 Gb/s Low-power DC-coupled NRZ Differential Electro-absorption Modulator Driver in 55 Nm SiGe BiCMOS.” Journal of Lightwave Technology 37 (5): 1504–1514.
APA
Ramon, H., Lambrecht, J., Verbist, J., Vanhoecke, M., Srinivasan, S. A., De Heyn, P., Van Campenhout, J., et al. (2019). 70 Gb/s low-power DC-coupled NRZ differential electro-absorption modulator driver in 55 nm SiGe BiCMOS. JOURNAL OF LIGHTWAVE TECHNOLOGY, 37(5), 1504–1514. Presented at the 44th Annual European Conference on Optical Communication (ECOC).
Vancouver
1.
Ramon H, Lambrecht J, Verbist J, Vanhoecke M, Srinivasan SA, De Heyn P, et al. 70 Gb/s low-power DC-coupled NRZ differential electro-absorption modulator driver in 55 nm SiGe BiCMOS. JOURNAL OF LIGHTWAVE TECHNOLOGY. Piscataway: Ieee-inst Electrical Electronics Engineers Inc; 2019;37(5):1504–14.
MLA
Ramon, Hannes et al. “70 Gb/s Low-power DC-coupled NRZ Differential Electro-absorption Modulator Driver in 55 Nm SiGe BiCMOS.” JOURNAL OF LIGHTWAVE TECHNOLOGY 37.5 (2019): 1504–1514. Print.
@article{8612881,
  abstract     = {We present a 70 Gb/s capable optical transmitter consisting of a 50 mu m long GeSi electro-absorption modulator (integrated in silicon photonics) and a fully differential driver designed in a 55 nm SiGe BiCMOS technology. By properly unbalancing the output stage, the driver can be dc-coupled to the modulator thus avoiding the use of on-chip or external bias-Ts. At a wavelength of 1560 nm, open eye diagrams for 70 Gb/s after transmission over 2 km standard single-mode fiber were demonstrated. The total power consumption is 61 mW, corresponding to 0.87 pJ/b at 70 Gb/s. Bit-error rate measurements at 50 Gb/s and 56 Gb/s (performed both back to back and with up to 2 km standard single-mode fiber) demonstrate large (0.4 UI at a BER of 10(-12)) horizontal eye margins. This optical transmitter is ideally suited for datacenter applications that require densely integrated transceivers with a low power consumption.},
  author       = {Ramon, Hannes and Lambrecht, Joris and Verbist, Jochem and Vanhoecke, Michael and Srinivasan, Srinivasan Ashwyn and De Heyn, Peter and Van Campenhout, Joris and Ossieur, Peter and Yin, Xin and Bauwelinck, Johan},
  issn         = {0733-8724},
  journal      = {JOURNAL OF LIGHTWAVE TECHNOLOGY},
  keywords     = {TRANSMISSION,MW,DC-coupled,differential,driver,EAM,low power,modulator bias},
  language     = {eng},
  location     = {Rome, ITALY},
  number       = {5},
  pages        = {1504--1514},
  publisher    = {Ieee-inst Electrical Electronics Engineers Inc},
  title        = {70 Gb/s low-power DC-coupled NRZ differential electro-absorption modulator driver in 55 nm SiGe BiCMOS},
  url          = {http://dx.doi.org/10.1109/JLT.2019.2900192},
  volume       = {37},
  year         = {2019},
}

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