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Effect of annealing ferroelectric HfO2 thin films : in situ, high temperature X-ray diffraction

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Abstract
The ferroelectricity in fluorite oxides has gained increasing interest due to its promising properties for multiple applications in semiconductor as well as energy devices. The structural origin of the unexpected ferroelectricity is now believed to be the formation of a non-centrosymmetric orthorhombic phase with the space group of Pca2(1). However, the factors driving the formation of the ferroelectric phase are still under debate. In this study, to understand the effect of annealing temperature, the crystallization process of doped HfO2 thin films is analyzed using in situ, high-temperature X-ray diffraction. The change in phase fractions in a multiphase system accompanied with the unit cell volume increase during annealing could be directly observed from X-ray diffraction analyses, and the observations give an information toward understanding the effect of annealing temperature on the structure and electrical properties. A strong coupling between the structure and the electrical properties is reconfirmed from this result.
Keywords
DOPED HAFNIUM OXIDE, PHASE-TRANSITIONS, DEPOSITION, SILICON, ferroelectricity, fluorite structure, hafnia, phase transitions, X-ray, diffraction

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Chicago
Park, Min Hyuk, Ching-Chang Chung, Tony Schenk, Claudia Richter, Karl Opsomer, Christophe Detavernier, Christoph Adelmann, Jacob L Jones, Thomas Mikolajick, and Uwe Schroeder. 2018. “Effect of Annealing Ferroelectric HfO2 Thin Films : in Situ, High Temperature X-ray Diffraction.” Advanced Electronic Materials 4 (7).
APA
Park, M. H., Chung, C.-C., Schenk, T., Richter, C., Opsomer, K., Detavernier, C., Adelmann, C., et al. (2018). Effect of annealing ferroelectric HfO2 thin films : in situ, high temperature X-ray diffraction. ADVANCED ELECTRONIC MATERIALS, 4(7).
Vancouver
1.
Park MH, Chung C-C, Schenk T, Richter C, Opsomer K, Detavernier C, et al. Effect of annealing ferroelectric HfO2 thin films : in situ, high temperature X-ray diffraction. ADVANCED ELECTRONIC MATERIALS. 2018;4(7).
MLA
Park, Min Hyuk et al. “Effect of Annealing Ferroelectric HfO2 Thin Films : in Situ, High Temperature X-ray Diffraction.” ADVANCED ELECTRONIC MATERIALS 4.7 (2018): n. pag. Print.
@article{8609302,
  abstract     = {The ferroelectricity in fluorite oxides has gained increasing interest due to its promising properties for multiple applications in semiconductor as well as energy devices. The structural origin of the unexpected ferroelectricity is now believed to be the formation of a non-centrosymmetric orthorhombic phase with the space group of Pca2(1). However, the factors driving the formation of the ferroelectric phase are still under debate. In this study, to understand the effect of annealing temperature, the crystallization process of doped HfO2 thin films is analyzed using in situ, high-temperature X-ray diffraction. The change in phase fractions in a multiphase system accompanied with the unit cell volume increase during annealing could be directly observed from X-ray diffraction analyses, and the observations give an information toward understanding the effect of annealing temperature on the structure and electrical properties. A strong coupling between the structure and the electrical properties is reconfirmed from this result.},
  articleno    = {1800091},
  author       = {Park, Min Hyuk and Chung, Ching-Chang and Schenk, Tony and Richter, Claudia and Opsomer, Karl and Detavernier, Christophe and Adelmann, Christoph and Jones, Jacob L and Mikolajick, Thomas and Schroeder, Uwe},
  issn         = {2199-160X},
  journal      = {ADVANCED ELECTRONIC MATERIALS},
  language     = {eng},
  number       = {7},
  pages        = {10},
  title        = {Effect of annealing ferroelectric HfO2 thin films : in situ, high temperature X-ray diffraction},
  url          = {http://dx.doi.org/10.1002/aelm.201800091},
  volume       = {4},
  year         = {2018},
}

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