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Annealing of thin 'Tincone' films, a tin-based hybrid material deposited by molecular layer deposition, in reducing, inert, and oxidizing atmospheres

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Abstract
Molecular layer deposition of hybrid organic-inorganic thin films called "tincones" is achieved using tetrakisdimethylaminotin as the metal precursor and glycerol (GL) as the organic reactant. The GL-based process displays linear growth and self-limiting surface reactions in a broad temperature window ranging from 75 to 200 degrees C. At higher temperatures, no film growth is possible. The growth per cycle decreases rapidly with increasing temperature from 1.3 angstrom(with numbers) at 75 degrees C to less than 0.1 angstrom at 200 degrees C. The films are observed to be smooth with scanning electron microscopy and atomic force microscopy. The hybrid organic-inorganic nature of the films is visible in both infrared spectroscopy and x-ray photoelectron spectroscopy. As deposited tincone films are annealed in reducing (H-2), inert (He), or oxidizing (O-2) atmospheres. In situ x-ray diffraction is employed to study the crystallization of the films during annealing. Tincone films annealed in reducing or inert atmosphere crystallize into a tetragonal SnO phase at 388 and 410 degrees C, respectively. These temperatures are lower than the crystallization temperature of 480 degrees C for atomic layer deposition (ALD) tin oxide films annealed in H-2. Tincone films annealed in oxygen crystallize into an SnO2 phase at a temperature of 523 degrees C, which is similar to the crystallization temperature for ALD tin oxide films annealed in He or O-2. This reduced temperature for crystallization into SnO for the tincone films is interesting since SnO is one of the few metal oxides known as a p-type semiconductor material.
Keywords
OXIDE-FILMS, GROWTH, GLYCEROL, NANOPARTICLES, TITANICONE, ELECTRODE, AGENT

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Chicago
Van de Kerckhove, Kevin, Jolien Dendooven, and Christophe Detavernier. 2018. “Annealing of Thin ‘Tincone’ Films, a Tin-based Hybrid Material Deposited by Molecular Layer Deposition, in Reducing, Inert, and Oxidizing Atmospheres.” Journal of Vacuum Science & Technology A 36 (5).
APA
Van de Kerckhove, K., Dendooven, J., & Detavernier, C. (2018). Annealing of thin “Tincone” films, a tin-based hybrid material deposited by molecular layer deposition, in reducing, inert, and oxidizing atmospheres. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(5).
Vancouver
1.
Van de Kerckhove K, Dendooven J, Detavernier C. Annealing of thin “Tincone” films, a tin-based hybrid material deposited by molecular layer deposition, in reducing, inert, and oxidizing atmospheres. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2018;36(5).
MLA
Van de Kerckhove, Kevin, Jolien Dendooven, and Christophe Detavernier. “Annealing of Thin ‘Tincone’ Films, a Tin-based Hybrid Material Deposited by Molecular Layer Deposition, in Reducing, Inert, and Oxidizing Atmospheres.” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 36.5 (2018): n. pag. Print.
@article{8609299,
  abstract     = {Molecular layer deposition of hybrid organic-inorganic thin films called {\textacutedbl}tincones{\textacutedbl} is achieved using tetrakisdimethylaminotin as the metal precursor and glycerol (GL) as the organic reactant. The GL-based process displays linear growth and self-limiting surface reactions in a broad temperature window ranging from 75 to 200 degrees C. At higher temperatures, no film growth is possible. The growth per cycle decreases rapidly with increasing temperature from 1.3 angstrom(with numbers) at 75 degrees C to less than 0.1 angstrom at 200 degrees C. The films are observed to be smooth with scanning electron microscopy and atomic force microscopy. The hybrid organic-inorganic nature of the films is visible in both infrared spectroscopy and x-ray photoelectron spectroscopy. As deposited tincone films are annealed in reducing (H-2), inert (He), or oxidizing (O-2) atmospheres. In situ x-ray diffraction is employed to study the crystallization of the films during annealing. Tincone films annealed in reducing or inert atmosphere crystallize into a tetragonal SnO phase at 388 and 410 degrees C, respectively. These temperatures are lower than the crystallization temperature of 480 degrees C for atomic layer deposition (ALD) tin oxide films annealed in H-2. Tincone films annealed in oxygen crystallize into an SnO2 phase at a temperature of 523 degrees C, which is similar to the crystallization temperature for ALD tin oxide films annealed in He or O-2. This reduced temperature for crystallization into SnO for the tincone films is interesting since SnO is one of the few metal oxides known as a p-type semiconductor material.},
  articleno    = {051506},
  author       = {Van de Kerckhove, Kevin and Dendooven, Jolien and Detavernier, Christophe},
  issn         = {0734-2101},
  journal      = {JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY A},
  language     = {eng},
  number       = {5},
  pages        = {8},
  title        = {Annealing of thin 'Tincone' films, a tin-based hybrid material deposited by molecular layer deposition, in reducing, inert, and oxidizing atmospheres},
  url          = {http://dx.doi.org/10.1116/1.5038867},
  volume       = {36},
  year         = {2018},
}

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