Atomic layer deposition of Al2O3 using aluminum triisopropoxide (ATIP) : a combined experimental and theoretical study
- Author
- Ba Tai Truong (UGent) , Li'ao Cao (UGent) , Felix Mattelaer (UGent) , Geert Rampelberg (UGent) , Fatemeh SM Hashemi, Jolien Dendooven (UGent) , J Ruud van Ommen, Christophe Detavernier (UGent) and Marie-Françoise Reyniers (UGent)
- Organization
- Abstract
- The aluminum precursor plays a crucial role in the Al2O3 ALD process. To date, trimethylaluminum (TMA) is one of the most widely used precursors in experimental and theoretical studies. However, its application at industrial scale can pose safety risks since it is pyrophoric and extremely reactive with water. Aluminum alkoxides offer a promising alternative, but have received far less attention. A combined theoretical and experimental investigation is carried out on the Al2O3 ALD process using aluminum triisopropoxide (ATIP) as a prototypical example of Al-alkoxide precursors. The experimental results pointed out that the thermal ALD process using ATIP and water has a maximal growth per cycle (GPC) of 1.8 angstrom/cycle at temperatures of 150 to 175 degrees C. On the basis of the in situ mass spectrometry analysis and DFT calculations, the formation of the alumina film mainly occurs during the water pulse by ligand exchange reactions between water and adsorbed precursors, while during the ATIP pulse only adsorption of ATIP and/or its dissociation occur. Design of heteroleptic precursors containing alkoxide group as basic ligand is challenging, but greatly promising for future industrial scale Al2O3 ALD.
- Keywords
- OXIDE THIN-FILMS, TOTAL-ENERGY CALCULATIONS, SURFACE-CHEMISTRY, GROWTH, EPITAXY, POINTS
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8609293
- MLA
- Truong, Ba Tai, et al. “Atomic Layer Deposition of Al2O3 Using Aluminum Triisopropoxide (ATIP) : A Combined Experimental and Theoretical Study.” JOURNAL OF PHYSICAL CHEMISTRY C, vol. 123, no. 1, 2019, pp. 485–94, doi:10.1021/acs.jpcc.8b09198.
- APA
- Truong, B. T., Cao, L., Mattelaer, F., Rampelberg, G., Hashemi, F. S., Dendooven, J., … Reyniers, M.-F. (2019). Atomic layer deposition of Al2O3 using aluminum triisopropoxide (ATIP) : a combined experimental and theoretical study. JOURNAL OF PHYSICAL CHEMISTRY C, 123(1), 485–494. https://doi.org/10.1021/acs.jpcc.8b09198
- Chicago author-date
- Truong, Ba Tai, Li’ao Cao, Felix Mattelaer, Geert Rampelberg, Fatemeh SM Hashemi, Jolien Dendooven, J Ruud van Ommen, Christophe Detavernier, and Marie-Françoise Reyniers. 2019. “Atomic Layer Deposition of Al2O3 Using Aluminum Triisopropoxide (ATIP) : A Combined Experimental and Theoretical Study.” JOURNAL OF PHYSICAL CHEMISTRY C 123 (1): 485–94. https://doi.org/10.1021/acs.jpcc.8b09198.
- Chicago author-date (all authors)
- Truong, Ba Tai, Li’ao Cao, Felix Mattelaer, Geert Rampelberg, Fatemeh SM Hashemi, Jolien Dendooven, J Ruud van Ommen, Christophe Detavernier, and Marie-Françoise Reyniers. 2019. “Atomic Layer Deposition of Al2O3 Using Aluminum Triisopropoxide (ATIP) : A Combined Experimental and Theoretical Study.” JOURNAL OF PHYSICAL CHEMISTRY C 123 (1): 485–494. doi:10.1021/acs.jpcc.8b09198.
- Vancouver
- 1.Truong BT, Cao L, Mattelaer F, Rampelberg G, Hashemi FS, Dendooven J, et al. Atomic layer deposition of Al2O3 using aluminum triisopropoxide (ATIP) : a combined experimental and theoretical study. JOURNAL OF PHYSICAL CHEMISTRY C. 2019;123(1):485–94.
- IEEE
- [1]B. T. Truong et al., “Atomic layer deposition of Al2O3 using aluminum triisopropoxide (ATIP) : a combined experimental and theoretical study,” JOURNAL OF PHYSICAL CHEMISTRY C, vol. 123, no. 1, pp. 485–494, 2019.
@article{8609293,
abstract = {{The aluminum precursor plays a crucial role in the Al2O3 ALD process. To date, trimethylaluminum (TMA) is one of the most widely used precursors in experimental and theoretical studies. However, its application at industrial scale can pose safety risks since it is pyrophoric and extremely reactive with water. Aluminum alkoxides offer a promising alternative, but have received far less attention. A combined theoretical and experimental investigation is carried out on the Al2O3 ALD process using aluminum triisopropoxide (ATIP) as a prototypical example of Al-alkoxide precursors. The experimental results pointed out that the thermal ALD process using ATIP and water has a maximal growth per cycle (GPC) of 1.8 angstrom/cycle at temperatures of 150 to 175 degrees C. On the basis of the in situ mass spectrometry analysis and DFT calculations, the formation of the alumina film mainly occurs during the water pulse by ligand exchange reactions between water and adsorbed precursors, while during the ATIP pulse only adsorption of ATIP and/or its dissociation occur. Design of heteroleptic precursors containing alkoxide group as basic ligand is challenging, but greatly promising for future industrial scale Al2O3 ALD.}},
author = {{Truong, Ba Tai and Cao, Li'ao and Mattelaer, Felix and Rampelberg, Geert and Hashemi, Fatemeh SM and Dendooven, Jolien and van Ommen, J Ruud and Detavernier, Christophe and Reyniers, Marie-Françoise}},
issn = {{1932-7447}},
journal = {{JOURNAL OF PHYSICAL CHEMISTRY C}},
keywords = {{OXIDE THIN-FILMS,TOTAL-ENERGY CALCULATIONS,SURFACE-CHEMISTRY,GROWTH,EPITAXY,POINTS}},
language = {{eng}},
number = {{1}},
pages = {{485--494}},
title = {{Atomic layer deposition of Al2O3 using aluminum triisopropoxide (ATIP) : a combined experimental and theoretical study}},
url = {{http://dx.doi.org/10.1021/acs.jpcc.8b09198}},
volume = {{123}},
year = {{2019}},
}
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