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Plasma enhanced atomic layer deposition of gallium sulfide thin films

Jakob Kuhs (UGent) , Zeger Hens (UGent) and Christophe Detavernier (UGent)
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Abstract
Gallium sulfide has a great potential for optoelectronic and energy storage applications. Since most of these applications require a high control over the layer thickness or a high conformality, atomic layer deposition is a promising deposition technique. In this work, the authors present a novel plasma enhanced atomic layer deposition process for gallium sulfide based on trimethylgallium and H2S/Ar plasma. The growth was characterized using in situ spectroscopic ellipsometry. It was found that the process grew linearly at a rate of 0.65 angstrom/cycle and was self-limited in the temperature range from 70 to 350 degrees C. The process relied on a combustion reaction, which was shown by the presence of CS2 during in situ mass spectrometry measurements. Furthermore, the material properties were investigated by x-ray photoelectron spectroscopy, x-ray diffraction, and optical transmission measurements. The as-deposited films were amorphous and pinhole free. The GaSx thin films had a transmittance of >90% and a band gap of 3.1-3.3 eV.
Keywords
CHEMICAL-VAPOR-DEPOSITION, OPTICAL-PROPERTIES, GROWTH, CONFORMALITY, MOCVD

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Citation

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Chicago
Kuhs, Jakob, Zeger Hens, and Christophe Detavernier. 2019. “Plasma Enhanced Atomic Layer Deposition of Gallium Sulfide Thin Films.” Journal of Vacuum Science & Technology A 37 (2).
APA
Kuhs, J., Hens, Z., & Detavernier, C. (2019). Plasma enhanced atomic layer deposition of gallium sulfide thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 37(2).
Vancouver
1.
Kuhs J, Hens Z, Detavernier C. Plasma enhanced atomic layer deposition of gallium sulfide thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2019;37(2).
MLA
Kuhs, Jakob, Zeger Hens, and Christophe Detavernier. “Plasma Enhanced Atomic Layer Deposition of Gallium Sulfide Thin Films.” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 37.2 (2019): n. pag. Print.
@article{8609292,
  abstract     = {Gallium sulfide has a great potential for optoelectronic and energy storage applications. Since most of these applications require a high control over the layer thickness or a high conformality, atomic layer deposition is a promising deposition technique. In this work, the authors present a novel plasma enhanced atomic layer deposition process for gallium sulfide based on trimethylgallium and H2S/Ar plasma. The growth was characterized using in situ spectroscopic ellipsometry. It was found that the process grew linearly at a rate of 0.65 angstrom/cycle and was self-limited in the temperature range from 70 to 350 degrees C. The process relied on a combustion reaction, which was shown by the presence of CS2 during in situ mass spectrometry measurements. Furthermore, the material properties were investigated by x-ray photoelectron spectroscopy, x-ray diffraction, and optical transmission measurements. The as-deposited films were amorphous and pinhole free. The GaSx thin films had a transmittance of {\textrangle}90\% and a band gap of 3.1-3.3 eV.},
  articleno    = {020915},
  author       = {Kuhs, Jakob and Hens, Zeger and Detavernier, Christophe},
  issn         = {0734-2101},
  journal      = {JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY A},
  language     = {eng},
  number       = {2},
  pages        = {6},
  title        = {Plasma enhanced atomic layer deposition of gallium sulfide thin films},
  url          = {http://dx.doi.org/10.1116/1.5079553},
  volume       = {37},
  year         = {2019},
}

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