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Silicon photonics traveling wave photodiode with integrated star coupler for high-linearity mm-wave applications

Laurens Bogaert (UGent) , Kasper Van Gasse (UGent) , Thijs Spuesens (UGent) , Guy Torfs (UGent) , Johan Bauwelinck (UGent) and Günther Roelkens (UGent)
(2018) OPTICS EXPRESS. 26(26). p.34763-34775
Author
Organization
Project
Center for nano- and biophotonics (NB-Photonics)
Abstract
Next-generation wireless communication will require increasingly faster data links. To achieve those higher data rates, the shift towards mmWave frequencies and smaller cell sizes will play a major role. Radio-over-Fiber has been proposed as a possible architecture to allow for this shift but is nowadays typically implemented digitally. as CPRI (Common Public Radio Interface). Centralization will be important to keep next-generation architectures cost-effective and therefore shared optical amplification at the central office could be preferable. Unfortunately. limited power handling capabilities of photodetectors still hinder the shift towards centralized optical amplification. Traveling wave photodetectors (TWPDs) have been devised to allow for high-linearity, high-speed opto-electronic conversion. In this paper, an architecture is discussed consisting of such a TWPD implemented on the iSiPP25G silicon photonics platform. A monolithically integrated star coupler is added in the design to provide compact power distribution while preserving the high linearity of the TWPD. The traveling wave structure (using 16 photodetectors) has a measured 3 dB bandwidth of 27.5 GHz and a fairly flat S-21 up to 50 GHz (less than 1 dB extra loss). Furthermore, the output referred third-order intercept point at 28 GHz, is improved from -1.79 dBm for a single Ge photodiode to 20.98 dBm by adopting the traveling wave design. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Keywords
CARRIER PHOTODIODE, FREQUENCY, DESIGN

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Citation

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Chicago
Bogaert, Laurens, Kasper Van Gasse, Thijs Spuesens, Guy Torfs, Johan Bauwelinck, and Günther Roelkens. 2018. “Silicon Photonics Traveling Wave Photodiode with Integrated Star Coupler for High-linearity Mm-wave Applications.” Optics Express 26 (26): 34763–34775.
APA
Bogaert, L., Van Gasse, K., Spuesens, T., Torfs, G., Bauwelinck, J., & Roelkens, G. (2018). Silicon photonics traveling wave photodiode with integrated star coupler for high-linearity mm-wave applications. OPTICS EXPRESS, 26(26), 34763–34775.
Vancouver
1.
Bogaert L, Van Gasse K, Spuesens T, Torfs G, Bauwelinck J, Roelkens G. Silicon photonics traveling wave photodiode with integrated star coupler for high-linearity mm-wave applications. OPTICS EXPRESS. Washington: Optical Soc Amer; 2018;26(26):34763–75.
MLA
Bogaert, Laurens et al. “Silicon Photonics Traveling Wave Photodiode with Integrated Star Coupler for High-linearity Mm-wave Applications.” OPTICS EXPRESS 26.26 (2018): 34763–34775. Print.
@article{8606039,
  abstract     = {Next-generation wireless communication will require increasingly faster data links. To achieve those higher data rates, the shift towards mmWave frequencies and smaller cell sizes will play a major role. Radio-over-Fiber has been proposed as a possible architecture to allow for this shift but is nowadays typically implemented digitally. as CPRI (Common Public Radio Interface). Centralization will be important to keep next-generation architectures cost-effective and therefore shared optical amplification at the central office could be preferable. Unfortunately. limited power handling capabilities of photodetectors still hinder the shift towards centralized optical amplification. Traveling wave photodetectors (TWPDs) have been devised to allow for high-linearity, high-speed opto-electronic conversion. In this paper, an architecture is discussed consisting of such a TWPD implemented on the iSiPP25G silicon photonics platform. A monolithically integrated star coupler is added in the design to provide compact power distribution while preserving the high linearity of the TWPD. The traveling wave structure (using 16 photodetectors) has a measured 3 dB bandwidth of 27.5 GHz and a fairly flat S-21 up to 50 GHz (less than 1 dB extra loss). Furthermore, the output referred third-order intercept point at 28 GHz, is improved from -1.79 dBm for a single Ge photodiode to 20.98 dBm by adopting the traveling wave design. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement},
  author       = {Bogaert, Laurens and Van Gasse, Kasper and Spuesens, Thijs and Torfs, Guy and Bauwelinck, Johan and Roelkens, G{\"u}nther},
  issn         = {1094-4087},
  journal      = {OPTICS EXPRESS},
  language     = {eng},
  number       = {26},
  pages        = {34763--34775},
  publisher    = {Optical Soc Amer},
  title        = {Silicon photonics traveling wave photodiode with integrated star coupler for high-linearity mm-wave applications},
  url          = {http://dx.doi.org/10.1364/OE.26.034763},
  volume       = {26},
  year         = {2018},
}

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