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Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level

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Abstract
Wafer-scale ultra-thin WO3 nanofilms, Ga2O3 nanofilms and Ga2O3-WO3 heterostructures with thickness of approximately (similar to)8.0 nm were fabricated on the SiO2/Si substrates by atomic layer deposition (ALD) technique for their subsequent usage as sensing materials for the ethanol detection. Structure and morphology of the developed ultra-thin samples were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, etc. Sensing properties of the developed ultra-thin nanostructures were investigated at the different temperatures and ethanol concentrations. The results showed that Ga2O3-WO3 heterostructures based gas sensor exhibited about 4 and 10-fold improvement in the response to ethanol compared to that of WO3 and Ga2O3 nanofilms at 275 degrees C. Furthermore, the sensor based on Ga2O3-WO3 heterostructures exhibited shorter response/recover time and excellent selectivity towards ethanol. ALD fabrication method provides a great potential for improvement of the sensing capabilities of high-performance gas sensor based on Ga2O3-WO3 heterostructures.
Keywords
Ga2O3-WO3, Heterostructures, Atomic layer deposition, Chemical sensors, GAS-SENSING PROPERTIES, HOLLOW MICROSPHERES, FACILE SYNTHESIS, PERFORMANCE, OXIDE, BETA-GA2O3, NANOSHEETS, SENSORS, MICROSTRUCTURES, NANOPARTICLES

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MLA
Wei, Zihan et al. “Ultra-thin Sub-10 Nm Ga2O3-WO3 Heterostructures Developed by Atomic Layer Deposition for Sensitive and Selective C2H5OH Detection on Ppm Level.” SENSORS AND ACTUATORS B-CHEMICAL 287 (2019): 147–156. Print.
APA
Wei, Zihan, Karbalaeiakbari, M., Hai, Z., Karuparambil Ramachandran, R., Detavernier, C., Verpoort, F., Kats, E., et al. (2019). Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level. SENSORS AND ACTUATORS B-CHEMICAL, 287, 147–156.
Chicago author-date
Wei, Zihan, Mohammad Karbalaeiakbari, Zhenyin Hai, Ranjith Karuparambil Ramachandran, Christophe Detavernier, Francis Verpoort, Eugene Kats, Hongyan Xu, Jie Hu, and Serge Zhuiykov. 2019. “Ultra-thin Sub-10 Nm Ga2O3-WO3 Heterostructures Developed by Atomic Layer Deposition for Sensitive and Selective C2H5OH Detection on Ppm Level.” Sensors and Actuators B-chemical 287: 147–156.
Chicago author-date (all authors)
Wei, Zihan, Mohammad Karbalaeiakbari, Zhenyin Hai, Ranjith Karuparambil Ramachandran, Christophe Detavernier, Francis Verpoort, Eugene Kats, Hongyan Xu, Jie Hu, and Serge Zhuiykov. 2019. “Ultra-thin Sub-10 Nm Ga2O3-WO3 Heterostructures Developed by Atomic Layer Deposition for Sensitive and Selective C2H5OH Detection on Ppm Level.” Sensors and Actuators B-chemical 287: 147–156.
Vancouver
1.
Wei Z, Karbalaeiakbari M, Hai Z, Karuparambil Ramachandran R, Detavernier C, Verpoort F, et al. Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level. SENSORS AND ACTUATORS B-CHEMICAL. 2019;287:147–56.
IEEE
[1]
Z. Wei et al., “Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level,” SENSORS AND ACTUATORS B-CHEMICAL, vol. 287, pp. 147–156, 2019.
@article{8601667,
  abstract     = {Wafer-scale ultra-thin WO3 nanofilms, Ga2O3 nanofilms and Ga2O3-WO3 heterostructures with thickness of approximately (similar to)8.0 nm were fabricated on the SiO2/Si substrates by atomic layer deposition (ALD) technique for their subsequent usage as sensing materials for the ethanol detection. Structure and morphology of the developed ultra-thin samples were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, etc. Sensing properties of the developed ultra-thin nanostructures were investigated at the different temperatures and ethanol concentrations. The results showed that Ga2O3-WO3 heterostructures based gas sensor exhibited about 4 and 10-fold improvement in the response to ethanol compared to that of WO3 and Ga2O3 nanofilms at 275 degrees C. Furthermore, the sensor based on Ga2O3-WO3 heterostructures exhibited shorter response/recover time and excellent selectivity towards ethanol. ALD fabrication method provides a great potential for improvement of the sensing capabilities of high-performance gas sensor based on Ga2O3-WO3 heterostructures.},
  author       = {Wei, Zihan and Karbalaei Akbari, Mohammad and Hai, Zhenyin and Karuparambil Ramachandran, Ranjith and Detavernier, Christophe and Verpoort, Francis and Kats, Eugene and Xu, Hongyan and Hu, Jie and Zhuiykov, Serge},
  issn         = {0925-4005},
  journal      = {SENSORS AND ACTUATORS B-CHEMICAL},
  keywords     = {Ga2O3-WO3,Heterostructures,Atomic layer deposition,Chemical sensors,GAS-SENSING PROPERTIES,HOLLOW MICROSPHERES,FACILE SYNTHESIS,PERFORMANCE,OXIDE,BETA-GA2O3,NANOSHEETS,SENSORS,MICROSTRUCTURES,NANOPARTICLES},
  language     = {eng},
  pages        = {147--156},
  title        = {Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level},
  url          = {http://dx.doi.org/10.1016/j.snb.2019.02.046},
  volume       = {287},
  year         = {2019},
}

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