Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level
- Author
- Zihan Wei, Mohammad Karbalaei Akbari, Zhenyin Hai, Ranjith Karuparambil Ramachandran (UGent) , Christophe Detavernier (UGent) , Francis Verpoort (UGent) , Eugene Kats, Hongyan Xu, Jie Hu and Serge Zhuiykov
- Organization
- Abstract
- Wafer-scale ultra-thin WO3 nanofilms, Ga2O3 nanofilms and Ga2O3-WO3 heterostructures with thickness of approximately (similar to)8.0 nm were fabricated on the SiO2/Si substrates by atomic layer deposition (ALD) technique for their subsequent usage as sensing materials for the ethanol detection. Structure and morphology of the developed ultra-thin samples were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, etc. Sensing properties of the developed ultra-thin nanostructures were investigated at the different temperatures and ethanol concentrations. The results showed that Ga2O3-WO3 heterostructures based gas sensor exhibited about 4 and 10-fold improvement in the response to ethanol compared to that of WO3 and Ga2O3 nanofilms at 275 degrees C. Furthermore, the sensor based on Ga2O3-WO3 heterostructures exhibited shorter response/recover time and excellent selectivity towards ethanol. ALD fabrication method provides a great potential for improvement of the sensing capabilities of high-performance gas sensor based on Ga2O3-WO3 heterostructures.
- Keywords
- Ga2O3-WO3, Heterostructures, Atomic layer deposition, Chemical sensors, GAS-SENSING PROPERTIES, HOLLOW MICROSPHERES, FACILE SYNTHESIS, PERFORMANCE, OXIDE, BETA-GA2O3, NANOSHEETS, SENSORS, MICROSTRUCTURES, NANOPARTICLES
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8601667
- MLA
- Wei, Zihan, et al. “Ultra-Thin Sub-10 Nm Ga2O3-WO3 Heterostructures Developed by Atomic Layer Deposition for Sensitive and Selective C2H5OH Detection on Ppm Level.” SENSORS AND ACTUATORS B-CHEMICAL, vol. 287, 2019, pp. 147–56, doi:10.1016/j.snb.2019.02.046.
- APA
- Wei, Z., Karbalaei Akbari, M., Hai, Z., Karuparambil Ramachandran, R., Detavernier, C., Verpoort, F., … Zhuiykov, S. (2019). Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level. SENSORS AND ACTUATORS B-CHEMICAL, 287, 147–156. https://doi.org/10.1016/j.snb.2019.02.046
- Chicago author-date
- Wei, Zihan, Mohammad Karbalaei Akbari, Zhenyin Hai, Ranjith Karuparambil Ramachandran, Christophe Detavernier, Francis Verpoort, Eugene Kats, Hongyan Xu, Jie Hu, and Serge Zhuiykov. 2019. “Ultra-Thin Sub-10 Nm Ga2O3-WO3 Heterostructures Developed by Atomic Layer Deposition for Sensitive and Selective C2H5OH Detection on Ppm Level.” SENSORS AND ACTUATORS B-CHEMICAL 287: 147–56. https://doi.org/10.1016/j.snb.2019.02.046.
- Chicago author-date (all authors)
- Wei, Zihan, Mohammad Karbalaei Akbari, Zhenyin Hai, Ranjith Karuparambil Ramachandran, Christophe Detavernier, Francis Verpoort, Eugene Kats, Hongyan Xu, Jie Hu, and Serge Zhuiykov. 2019. “Ultra-Thin Sub-10 Nm Ga2O3-WO3 Heterostructures Developed by Atomic Layer Deposition for Sensitive and Selective C2H5OH Detection on Ppm Level.” SENSORS AND ACTUATORS B-CHEMICAL 287: 147–156. doi:10.1016/j.snb.2019.02.046.
- Vancouver
- 1.Wei Z, Karbalaei Akbari M, Hai Z, Karuparambil Ramachandran R, Detavernier C, Verpoort F, et al. Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level. SENSORS AND ACTUATORS B-CHEMICAL. 2019;287:147–56.
- IEEE
- [1]Z. Wei et al., “Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level,” SENSORS AND ACTUATORS B-CHEMICAL, vol. 287, pp. 147–156, 2019.
@article{8601667,
abstract = {{Wafer-scale ultra-thin WO3 nanofilms, Ga2O3 nanofilms and Ga2O3-WO3 heterostructures with thickness of approximately (similar to)8.0 nm were fabricated on the SiO2/Si substrates by atomic layer deposition (ALD) technique for their subsequent usage as sensing materials for the ethanol detection. Structure and morphology of the developed ultra-thin samples were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, etc. Sensing properties of the developed ultra-thin nanostructures were investigated at the different temperatures and ethanol concentrations. The results showed that Ga2O3-WO3 heterostructures based gas sensor exhibited about 4 and 10-fold improvement in the response to ethanol compared to that of WO3 and Ga2O3 nanofilms at 275 degrees C. Furthermore, the sensor based on Ga2O3-WO3 heterostructures exhibited shorter response/recover time and excellent selectivity towards ethanol. ALD fabrication method provides a great potential for improvement of the sensing capabilities of high-performance gas sensor based on Ga2O3-WO3 heterostructures.}},
author = {{Wei, Zihan and Karbalaei Akbari, Mohammad and Hai, Zhenyin and Karuparambil Ramachandran, Ranjith and Detavernier, Christophe and Verpoort, Francis and Kats, Eugene and Xu, Hongyan and Hu, Jie and Zhuiykov, Serge}},
issn = {{0925-4005}},
journal = {{SENSORS AND ACTUATORS B-CHEMICAL}},
keywords = {{Ga2O3-WO3,Heterostructures,Atomic layer deposition,Chemical sensors,GAS-SENSING PROPERTIES,HOLLOW MICROSPHERES,FACILE SYNTHESIS,PERFORMANCE,OXIDE,BETA-GA2O3,NANOSHEETS,SENSORS,MICROSTRUCTURES,NANOPARTICLES}},
language = {{eng}},
pages = {{147--156}},
title = {{Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level}},
url = {{http://doi.org/10.1016/j.snb.2019.02.046}},
volume = {{287}},
year = {{2019}},
}
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