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Surface functionalization of two-dimensional vertically aligned semiconductor heterojunctions

Serge Zhuiykov (UGent) and Zhenyin Hai
(2018) Advanced materials research VIII. In Key Engineering Materials 765. p.8-11
Author
Organization
Keywords
Annealing, Atomic layer deposition, Energy conversion, Magnetic semiconductors, Nanostructured materials, Titanium dioxide, Tungsten compounds, Virtual storage, Energy conversion and storages, Functionalizations, Large-scale fabrication, Semiconductor heterojunctions, Surface Functionalization, TiO2-WO3, Two Dimensional (2 D), Vertically aligned, Heterojunctions

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MLA
Zhuiykov, Serge, and Zhenyin Hai. “Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions.” Advanced Materials Research VIII, edited by Serge Zhuiykov, vol. 765, Trans Tech Publications, 2018, pp. 8–11, doi:10.4028/www.scientific.net/KEM.765.8.
APA
Zhuiykov, S., & Hai, Z. (2018). Surface functionalization of two-dimensional vertically aligned semiconductor heterojunctions. In S. Zhuiykov (Ed.), Advanced materials research VIII (Vol. 765, pp. 8–11). https://doi.org/10.4028/www.scientific.net/KEM.765.8
Chicago author-date
Zhuiykov, Serge, and Zhenyin Hai. 2018. “Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions.” In Advanced Materials Research VIII, edited by Serge Zhuiykov, 765:8–11. Durnten-Zürich, Switzerland: Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/KEM.765.8.
Chicago author-date (all authors)
Zhuiykov, Serge, and Zhenyin Hai. 2018. “Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions.” In Advanced Materials Research VIII, ed by. Serge Zhuiykov, 765:8–11. Durnten-Zürich, Switzerland: Trans Tech Publications. doi:10.4028/www.scientific.net/KEM.765.8.
Vancouver
1.
Zhuiykov S, Hai Z. Surface functionalization of two-dimensional vertically aligned semiconductor heterojunctions. In: Zhuiykov S, editor. Advanced materials research VIII. Durnten-Zürich, Switzerland: Trans Tech Publications; 2018. p. 8–11.
IEEE
[1]
S. Zhuiykov and Z. Hai, “Surface functionalization of two-dimensional vertically aligned semiconductor heterojunctions,” in Advanced materials research VIII, Fukuoka, Japan, 2018, vol. 765, pp. 8–11.
@inproceedings{8600410,
  author       = {{Zhuiykov, Serge and Hai, Zhenyin}},
  booktitle    = {{Advanced materials research VIII}},
  editor       = {{Zhuiykov, Serge}},
  isbn         = {{9783035712308}},
  issn         = {{1013-9826}},
  keywords     = {{Annealing,Atomic layer deposition,Energy conversion,Magnetic semiconductors,Nanostructured materials,Titanium dioxide,Tungsten compounds,Virtual storage,Energy conversion and storages,Functionalizations,Large-scale fabrication,Semiconductor heterojunctions,Surface Functionalization,TiO2-WO3,Two Dimensional (2 D),Vertically aligned,Heterojunctions}},
  language     = {{eng}},
  location     = {{Fukuoka, Japan}},
  pages        = {{8--11}},
  publisher    = {{Trans Tech Publications}},
  title        = {{Surface functionalization of two-dimensional vertically aligned semiconductor heterojunctions}},
  url          = {{http://doi.org/10.4028/www.scientific.net/KEM.765.8}},
  volume       = {{765}},
  year         = {{2018}},
}
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