Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities
- Author
- Serge Zhuiykov (UGent) , Zhenyin Hai, Eugene Kats, Mohammad Karbalaei Akbari (UGent) and Chenyang Xue
- Organization
- Keywords
- Atoms, Deposition, Nanostructures, Oxide semiconductors, Architechture, Atomic levels, Enabling technologies, Hetero-nanostructures, Material features, Nanostructured semiconductor, Tungsten oxide, Two Dimensional (2 D), Atomic layer deposition
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8600400
- MLA
- Zhuiykov, Serge, et al. “Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors : Challenges and Opportunities.” Advanced Materials Research VII, edited by Serge Zhuiykov, vol. 735, Trans Tech Publications, 2017, pp. 215–18, doi:10.4028/www.scientific.net/KEM.735.215.
- APA
- Zhuiykov, S., Hai, Z., Kats, E., Karbalaei Akbari, M., & Xue, C. (2017). Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities. In S. Zhuiykov (Ed.), Advanced materials research VII (Vol. 735, pp. 215–218). https://doi.org/10.4028/www.scientific.net/KEM.735.215
- Chicago author-date
- Zhuiykov, Serge, Zhenyin Hai, Eugene Kats, Mohammad Karbalaei Akbari, and Chenyang Xue. 2017. “Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors : Challenges and Opportunities.” In Advanced Materials Research VII, edited by Serge Zhuiykov, 735:215–18. Durnten-Zürich, Switzerland: Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/KEM.735.215.
- Chicago author-date (all authors)
- Zhuiykov, Serge, Zhenyin Hai, Eugene Kats, Mohammad Karbalaei Akbari, and Chenyang Xue. 2017. “Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors : Challenges and Opportunities.” In Advanced Materials Research VII, ed by. Serge Zhuiykov, 735:215–218. Durnten-Zürich, Switzerland: Trans Tech Publications. doi:10.4028/www.scientific.net/KEM.735.215.
- Vancouver
- 1.Zhuiykov S, Hai Z, Kats E, Karbalaei Akbari M, Xue C. Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities. In: Zhuiykov S, editor. Advanced materials research VII. Durnten-Zürich, Switzerland: Trans Tech Publications; 2017. p. 215–8.
- IEEE
- [1]S. Zhuiykov, Z. Hai, E. Kats, M. Karbalaei Akbari, and C. Xue, “Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities,” in Advanced materials research VII, Hong Kong, PR China, 2017, vol. 735, pp. 215–218.
@inproceedings{8600400,
author = {{Zhuiykov, Serge and Hai, Zhenyin and Kats, Eugene and Karbalaei Akbari, Mohammad and Xue, Chenyang}},
booktitle = {{Advanced materials research VII}},
editor = {{Zhuiykov, Serge}},
isbn = {{9783035710878}},
issn = {{1013-9826}},
keywords = {{Atoms,Deposition,Nanostructures,Oxide semiconductors,Architechture,Atomic levels,Enabling technologies,Hetero-nanostructures,Material features,Nanostructured semiconductor,Tungsten oxide,Two Dimensional (2 D),Atomic layer deposition}},
language = {{eng}},
location = {{Hong Kong, PR China}},
pages = {{215--218}},
publisher = {{Trans Tech Publications}},
title = {{Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities}},
url = {{http://doi.org/10.4028/www.scientific.net/KEM.735.215}},
volume = {{735}},
year = {{2017}},
}
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