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Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities

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Keywords
Atoms, Deposition, Nanostructures, Oxide semiconductors, Architechture, Atomic levels, Enabling technologies, Hetero-nanostructures, Material features, Nanostructured semiconductor, Tungsten oxide, Two Dimensional (2 D), Atomic layer deposition

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MLA
Zhuiykov, Serge, et al. “Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors : Challenges and Opportunities.” Advanced Materials Research VII, edited by Serge Zhuiykov, vol. 735, Trans Tech Publications, 2017, pp. 215–18, doi:10.4028/www.scientific.net/KEM.735.215.
APA
Zhuiykov, S., Hai, Z., Kats, E., Karbalaei Akbari, M., & Xue, C. (2017). Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities. In S. Zhuiykov (Ed.), Advanced materials research VII (Vol. 735, pp. 215–218). https://doi.org/10.4028/www.scientific.net/KEM.735.215
Chicago author-date
Zhuiykov, Serge, Zhenyin Hai, Eugene Kats, Mohammad Karbalaei Akbari, and Chenyang Xue. 2017. “Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors : Challenges and Opportunities.” In Advanced Materials Research VII, edited by Serge Zhuiykov, 735:215–18. Durnten-Zürich, Switzerland: Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/KEM.735.215.
Chicago author-date (all authors)
Zhuiykov, Serge, Zhenyin Hai, Eugene Kats, Mohammad Karbalaei Akbari, and Chenyang Xue. 2017. “Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors : Challenges and Opportunities.” In Advanced Materials Research VII, ed by. Serge Zhuiykov, 735:215–218. Durnten-Zürich, Switzerland: Trans Tech Publications. doi:10.4028/www.scientific.net/KEM.735.215.
Vancouver
1.
Zhuiykov S, Hai Z, Kats E, Karbalaei Akbari M, Xue C. Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities. In: Zhuiykov S, editor. Advanced materials research VII. Durnten-Zürich, Switzerland: Trans Tech Publications; 2017. p. 215–8.
IEEE
[1]
S. Zhuiykov, Z. Hai, E. Kats, M. Karbalaei Akbari, and C. Xue, “Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities,” in Advanced materials research VII, Hong Kong, PR China, 2017, vol. 735, pp. 215–218.
@inproceedings{8600400,
  author       = {{Zhuiykov, Serge and Hai, Zhenyin and Kats, Eugene and Karbalaei Akbari, Mohammad and Xue, Chenyang}},
  booktitle    = {{Advanced materials research VII}},
  editor       = {{Zhuiykov, Serge}},
  isbn         = {{9783035710878}},
  issn         = {{1013-9826}},
  keywords     = {{Atoms,Deposition,Nanostructures,Oxide semiconductors,Architechture,Atomic levels,Enabling technologies,Hetero-nanostructures,Material features,Nanostructured semiconductor,Tungsten oxide,Two Dimensional (2 D),Atomic layer deposition}},
  language     = {{eng}},
  location     = {{Hong Kong, PR China}},
  pages        = {{215--218}},
  publisher    = {{Trans Tech Publications}},
  title        = {{Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities}},
  url          = {{http://doi.org/10.4028/www.scientific.net/KEM.735.215}},
  volume       = {{735}},
  year         = {{2017}},
}

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