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Solution-processed silver sulphide nanocrystal film for resistive switching memories

(2018) JOURNAL OF MATERIALS CHEMISTRY C. 6(48). p.13128-13135
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Organization
Abstract
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As an alternative to high temperature and vacuum-based physical sulphurization methods of silver (Ag), here we propose, as a resistive switching medium, a layer built from colloidal Ag-2 S-x nanocrystals - compatible with solution-processed approaches. The effects of the electrode size (from macro-to micro-scale), composition (Ag, Ti and Pt) and geometry on the device performance together with the electrochemical mechanisms involved are evaluated. We achieved an optimized Ag/Ti bowtie proof-of-concept configuration by e-beam lithography, which fulfils the general requirements for ReRAM devices in terms of low power consumption and a reliable I-ON/I-OFF ratio. This configuration demonstrates reproducible switching between ON and OFF states with data endurance of at least 20 cycles; and an I-ON/I-OFF ratio up to 10(3) at low power consumption (0.1 V read-out), which outperforms previous results in the literature for devices with resistive layers fabricated from silver chalcogenide nanoparticles.
Keywords
THIN-FILM, QUANTUM DOTS, AG2S, MECHANISMS, PROSPECTS, OXIDE, NANOPARTICLES

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Citation

Please use this url to cite or link to this publication:

MLA
Martin-Garcia, Beatriz et al. “Solution-processed Silver Sulphide Nanocrystal Film for Resistive Switching Memories.” JOURNAL OF MATERIALS CHEMISTRY C 6.48 (2018): 13128–13135. Print.
APA
Martin-Garcia, B., Spirito, D., Krahne, R., & Moreels, I. (2018). Solution-processed silver sulphide nanocrystal film for resistive switching memories. JOURNAL OF MATERIALS CHEMISTRY C, 6(48), 13128–13135.
Chicago author-date
Martin-Garcia, Beatriz, Davide Spirito, Roman Krahne, and Iwan Moreels. 2018. “Solution-processed Silver Sulphide Nanocrystal Film for Resistive Switching Memories.” Journal of Materials Chemistry C 6 (48): 13128–13135.
Chicago author-date (all authors)
Martin-Garcia, Beatriz, Davide Spirito, Roman Krahne, and Iwan Moreels. 2018. “Solution-processed Silver Sulphide Nanocrystal Film for Resistive Switching Memories.” Journal of Materials Chemistry C 6 (48): 13128–13135.
Vancouver
1.
Martin-Garcia B, Spirito D, Krahne R, Moreels I. Solution-processed silver sulphide nanocrystal film for resistive switching memories. JOURNAL OF MATERIALS CHEMISTRY C. 2018;6(48):13128–35.
IEEE
[1]
B. Martin-Garcia, D. Spirito, R. Krahne, and I. Moreels, “Solution-processed silver sulphide nanocrystal film for resistive switching memories,” JOURNAL OF MATERIALS CHEMISTRY C, vol. 6, no. 48, pp. 13128–13135, 2018.
@article{8589965,
  abstract     = {Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As an alternative to high temperature and vacuum-based physical sulphurization methods of silver (Ag), here we propose, as a resistive switching medium, a layer built from colloidal Ag-2 S-x nanocrystals - compatible with solution-processed approaches. The effects of the electrode size (from macro-to micro-scale), composition (Ag, Ti and Pt) and geometry on the device performance together with the electrochemical mechanisms involved are evaluated. We achieved an optimized Ag/Ti bowtie proof-of-concept configuration by e-beam lithography, which fulfils the general requirements for ReRAM devices in terms of low power consumption and a reliable I-ON/I-OFF ratio. This configuration demonstrates reproducible switching between ON and OFF states with data endurance of at least 20 cycles; and an I-ON/I-OFF ratio up to 10(3) at low power consumption (0.1 V read-out), which outperforms previous results in the literature for devices with resistive layers fabricated from silver chalcogenide nanoparticles.},
  author       = {Martin-Garcia, Beatriz and Spirito, Davide and Krahne, Roman and Moreels, Iwan},
  issn         = {2050-7526},
  journal      = {JOURNAL OF MATERIALS CHEMISTRY C},
  keywords     = {THIN-FILM,QUANTUM DOTS,AG2S,MECHANISMS,PROSPECTS,OXIDE,NANOPARTICLES},
  language     = {eng},
  number       = {48},
  pages        = {13128--13135},
  title        = {Solution-processed silver sulphide nanocrystal film for resistive switching memories},
  url          = {http://dx.doi.org/10.1039/c8tc04068k},
  volume       = {6},
  year         = {2018},
}

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