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Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

(2018) APPLIED PHYSICS LETTERS. 113(16). p.1-5
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Physics and Astronomy (miscellaneous)

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Citation

Please use this url to cite or link to this publication:

Chicago
Srinivasan, Srinivasan Ashwyn, C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat, R. Loo, J. Van Campenhout, and Dries Van Thourhout. 2018. “Carrier Scattering Induced Linewidth Broadening in in Situ P-doped Ge Layers on Si.” Applied Physics Letters 113 (16): 1–5.
APA
Srinivasan, S. A., Porret, C., Pantouvaki, M., Shimura, Y., Geiregat, P., Loo, R., Van Campenhout, J., et al. (2018). Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si. APPLIED PHYSICS LETTERS, 113(16), 1–5.
Vancouver
1.
Srinivasan SA, Porret C, Pantouvaki M, Shimura Y, Geiregat P, Loo R, et al. Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si. APPLIED PHYSICS LETTERS. AIP Publishing; 2018;113(16):1–5.
MLA
Srinivasan, Srinivasan Ashwyn, C. Porret, M. Pantouvaki, et al. “Carrier Scattering Induced Linewidth Broadening in in Situ P-doped Ge Layers on Si.” APPLIED PHYSICS LETTERS 113.16 (2018): 1–5. Print.
@article{8585055,
  articleno    = {161101},
  author       = {Srinivasan, Srinivasan Ashwyn and Porret, C. and Pantouvaki, M. and Shimura, Y. and Geiregat, Pieter and Loo, R. and Van Campenhout, J. and Van Thourhout, Dries},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {16},
  pages        = {161101:1--161101:5},
  publisher    = {AIP Publishing},
  title        = {Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si},
  url          = {http://dx.doi.org/10.1063/1.5040153},
  volume       = {113},
  year         = {2018},
}

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