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Citation

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Chicago
Stockman, Arno, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, and Benoit Bakeroot. 2018. “On the Origin of the Leakage Current in P-gate AlGaN/GaN HEMTs.” In 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) , 4B.5–1–4B.5–4. IEEE.
APA
Stockman, Arno, Canato, E., Tajalli, A., Meneghini, M., Meneghesso, G., Zanoni, E., Moens, P., et al. (2018). On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (pp. 4B.5–1–4B.5–4). Presented at the IEEE International Reliability Physics Symposium (IRPS) , IEEE.
Vancouver
1.
Stockman A, Canato E, Tajalli A, Meneghini M, Meneghesso G, Zanoni E, et al. On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) . IEEE; 2018. p. 4B.5–1–4B.5–4.
MLA
Stockman, Arno et al. “On the Origin of the Leakage Current in P-gate AlGaN/GaN HEMTs.” 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) . IEEE, 2018. 4B.5–1–4B.5–4. Print.
@inproceedings{8583747,
  author       = {Stockman, Arno and Canato, E. and Tajalli, A. and Meneghini, M. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, Benoit},
  booktitle    = {2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) },
  isbn         = {9781538654798},
  issn         = {1541-7026},
  language     = {eng},
  location     = {Burlingame, CA},
  pages        = {4B.5-1--4B.5-4},
  publisher    = {IEEE},
  title        = {On the origin of the leakage current in p-gate AlGaN/GaN HEMTs},
  url          = {http://dx.doi.org/10.1109/irps.2018.8353582},
  year         = {2018},
}

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