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Citation

Please use this url to cite or link to this publication:

MLA
Stockman, Arno, et al. “On the Origin of the Leakage Current in P-Gate AlGaN/GaN HEMTs.” 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE, 2018, pp. 4B.5-1-4B.5-4.
APA
Stockman, A., Canato, E., Tajalli, A., Meneghini, M., Meneghesso, G., Zanoni, E., … Bakeroot, B. (2018). On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. In 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (pp. 4B.5-1-4B.5-4). Burlingame, CA: IEEE.
Chicago author-date
Stockman, Arno, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, and Benoit Bakeroot. 2018. “On the Origin of the Leakage Current in P-Gate AlGaN/GaN HEMTs.” In 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 4B.5-1-4B.5-4. IEEE.
Chicago author-date (all authors)
Stockman, Arno, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, and Benoit Bakeroot. 2018. “On the Origin of the Leakage Current in P-Gate AlGaN/GaN HEMTs.” In 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 4B.5-1-4B.5-4. IEEE.
Vancouver
1.
Stockman A, Canato E, Tajalli A, Meneghini M, Meneghesso G, Zanoni E, et al. On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. In: 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). IEEE; 2018. p. 4B.5-1-4B.5-4.
IEEE
[1]
A. Stockman et al., “On the origin of the leakage current in p-gate AlGaN/GaN HEMTs,” in 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), Burlingame, CA, 2018, pp. 4B.5-1-4B.5-4.
@inproceedings{8583747,
  author       = {Stockman, Arno and Canato, E. and Tajalli, A. and Meneghini, M. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, Benoit},
  booktitle    = {2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)},
  isbn         = {9781538654798},
  issn         = {1541-7026},
  language     = {eng},
  location     = {Burlingame, CA},
  pages        = {4B.5-1--4B.5-4},
  publisher    = {IEEE},
  title        = {On the origin of the leakage current in p-gate AlGaN/GaN HEMTs},
  url          = {http://dx.doi.org/10.1109/irps.2018.8353582},
  year         = {2018},
}

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