On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
- Author
- Arno Stockman (UGent) , E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens and Benoit Bakeroot (UGent)
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8583747
- Chicago
- Stockman, Arno, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, and Benoit Bakeroot. 2018. “On the Origin of the Leakage Current in P-gate AlGaN/GaN HEMTs.” In 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) , 4B.5–1–4B.5–4. IEEE.
- APA
- Stockman, Arno, Canato, E., Tajalli, A., Meneghini, M., Meneghesso, G., Zanoni, E., Moens, P., et al. (2018). On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (pp. 4B.5–1–4B.5–4). Presented at the IEEE International Reliability Physics Symposium (IRPS) , IEEE.
- Vancouver
- 1.Stockman A, Canato E, Tajalli A, Meneghini M, Meneghesso G, Zanoni E, et al. On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) . IEEE; 2018. p. 4B.5–1–4B.5–4.
- MLA
- Stockman, Arno et al. “On the Origin of the Leakage Current in P-gate AlGaN/GaN HEMTs.” 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) . IEEE, 2018. 4B.5–1–4B.5–4. Print.
@inproceedings{8583747,
author = {Stockman, Arno and Canato, E. and Tajalli, A. and Meneghini, M. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, Benoit},
booktitle = {2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) },
isbn = {9781538654798},
issn = {1541-7026},
language = {eng},
location = {Burlingame, CA},
pages = {4B.5-1--4B.5-4},
publisher = {IEEE},
title = {On the origin of the leakage current in p-gate AlGaN/GaN HEMTs},
url = {http://dx.doi.org/10.1109/irps.2018.8353582},
year = {2018},
}
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