Advanced search
1 file | 1.57 MB Add to list

Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination

Author
Organization
Abstract
This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET) submitted to high-voltage stress. The impact of the GET structure, the passivation layer thickness, and a preclean process (sulfuric acid and hydrogen peroxide mixture + ammonia and hydrogen peroxide mixture) before the GET layer deposition on the time to breakdown t(BD) is analyzed. Initially, a reference structure with a single-GET structure, a thick passivation layer and excellent performance under dc, and pulse characterization is submitted to stress. The results show that the time to failure follows a Weibull distribution with high shape parameter values (beta similar to 3 and/or beta similar to 5) related to intrinsic failure mechanisms. The exponential dependence of tBD on the stress voltage suggests a degradation driven by the electric field, while lower thermal activation energies indicate that temperature acts as a weak acceleration factor. A more uniform distribution of the electric field-by adding an additional peak (double-GET structure) or with more equilibrated peaks (thin passivation structure)-and a more aggressive preclean process before the GET layer deposition improves the breakdown voltage and prolongs the device lifetime.

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 1.57 MB

Citation

Please use this url to cite or link to this publication:

MLA
Acurio, Eliana et al. “Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes with a Gated Edge Termination.” IEEE TRANSACTIONS ON ELECTRON DEVICES 65.5 (2018): 1765–1770. Print.
APA
Acurio, E., Crupi, F., Ronchi, N., De Jaeger, B., Bakeroot, B., Decoutere, S., & Trojman, L. (2018). Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination. IEEE TRANSACTIONS ON ELECTRON DEVICES, 65(5), 1765–1770.
Chicago author-date
Acurio, Eliana, Felice Crupi, Nicolo Ronchi, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere, and Lionel Trojman. 2018. “Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes with a Gated Edge Termination.” Ieee Transactions on Electron Devices 65 (5): 1765–1770.
Chicago author-date (all authors)
Acurio, Eliana, Felice Crupi, Nicolo Ronchi, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere, and Lionel Trojman. 2018. “Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes with a Gated Edge Termination.” Ieee Transactions on Electron Devices 65 (5): 1765–1770.
Vancouver
1.
Acurio E, Crupi F, Ronchi N, De Jaeger B, Bakeroot B, Decoutere S, et al. Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018;65(5):1765–70.
IEEE
[1]
E. Acurio et al., “Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 5, pp. 1765–1770, 2018.
@article{8583731,
  abstract     = {This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET) submitted to high-voltage stress. The impact of the GET structure, the passivation layer thickness, and a preclean process (sulfuric acid and hydrogen peroxide mixture + ammonia and hydrogen peroxide mixture) before the GET layer deposition on the time to breakdown t(BD) is analyzed. Initially, a reference structure with a single-GET structure, a thick passivation layer and excellent performance under dc, and pulse characterization is submitted to stress. The results show that the time to failure follows a Weibull distribution with high shape parameter values (beta similar to 3 and/or beta similar to 5) related to intrinsic failure mechanisms. The exponential dependence of tBD on the stress voltage suggests a degradation driven by the electric field, while lower thermal activation energies indicate that temperature acts as a weak acceleration factor. A more uniform distribution of the electric field-by adding an additional peak (double-GET structure) or with more equilibrated peaks (thin passivation structure)-and a more aggressive preclean process before the GET layer deposition improves the breakdown voltage and prolongs the device lifetime.},
  author       = {Acurio, Eliana and Crupi, Felice and Ronchi, Nicolo and De Jaeger, Brice and Bakeroot, Benoit and Decoutere, Stefaan and Trojman, Lionel},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  language     = {eng},
  number       = {5},
  pages        = {1765--1770},
  title        = {Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination},
  url          = {http://dx.doi.org/10.1109/TED.2018.2818409},
  volume       = {65},
  year         = {2018},
}

Altmetric
View in Altmetric
Web of Science
Times cited: