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Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors

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MLA
Bakeroot, Benoit et al. “Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-electron-mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES 65.1 (2018): 79–86. Print.
APA
Bakeroot, B., Stockman, A., Posthuma, N., Stoffels, S., & Decoutere, S. (2018). Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 65(1), 79–86.
Chicago author-date
Bakeroot, Benoit, Arno Stockman, Niels Posthuma, Steve Stoffels, and Stefaan Decoutere. 2018. “Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-electron-mobility Transistors.” Ieee Transactions on Electron Devices 65 (1): 79–86.
Chicago author-date (all authors)
Bakeroot, Benoit, Arno Stockman, Niels Posthuma, Steve Stoffels, and Stefaan Decoutere. 2018. “Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-electron-mobility Transistors.” Ieee Transactions on Electron Devices 65 (1): 79–86.
Vancouver
1.
Bakeroot B, Stockman A, Posthuma N, Stoffels S, Decoutere S. Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. Institute of Electrical and Electronics Engineers (IEEE); 2018;65(1):79–86.
IEEE
[1]
B. Bakeroot, A. Stockman, N. Posthuma, S. Stoffels, and S. Decoutere, “Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 1, pp. 79–86, 2018.
@article{8583721,
  author       = {Bakeroot, Benoit and Stockman, Arno and Posthuma, Niels and Stoffels, Steve and Decoutere, Stefaan},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  language     = {eng},
  number       = {1},
  pages        = {79--86},
  publisher    = {Institute of Electrical and Electronics Engineers (IEEE)},
  title        = {Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors},
  url          = {http://dx.doi.org/10.1109/ted.2017.2773269},
  volume       = {65},
  year         = {2018},
}

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