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Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors

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Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

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Citation

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Chicago
Stockman, Arno, Fabrizio Masin, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Benoit Bakeroot, and Peter Moens. 2018. “Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-electron-mobility Transistors.” Ieee Transactions on Electron Devices 65 (12): 5365–5372.
APA
Stockman, Arno, Masin, F., Meneghini, M., Zanoni, E., Meneghesso, G., Bakeroot, B., & Moens, P. (2018). Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 65(12), 5365–5372.
Vancouver
1.
Stockman A, Masin F, Meneghini M, Zanoni E, Meneghesso G, Bakeroot B, et al. Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. IEEE; 2018;65(12):5365–72.
MLA
Stockman, Arno et al. “Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-electron-mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES 65.12 (2018): 5365–5372. Print.
@article{8583074,
  author       = {Stockman, Arno and Masin, Fabrizio and Meneghini, Matteo and Zanoni, Enrico and Meneghesso, Gaudenzio and Bakeroot, Benoit and Moens, Peter},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {Electrical and Electronic Engineering,Electronic,Optical and Magnetic Materials},
  language     = {eng},
  number       = {12},
  pages        = {5365--5372},
  publisher    = {IEEE},
  title        = {Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors},
  url          = {http://dx.doi.org/10.1109/ted.2018.2877262},
  volume       = {65},
  year         = {2018},
}

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