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Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors

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Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

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MLA
Stockman, Arno, et al. “Gate Conduction Mechanisms and Lifetime Modeling of P-Gate AlGaN/GaN High-Electron-Mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 12, IEEE, 2018, pp. 5365–72.
APA
Stockman, A., Masin, F., Meneghini, M., Zanoni, E., Meneghesso, G., Bakeroot, B., & Moens, P. (2018). Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 65(12), 5365–5372.
Chicago author-date
Stockman, Arno, Fabrizio Masin, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Benoit Bakeroot, and Peter Moens. 2018. “Gate Conduction Mechanisms and Lifetime Modeling of P-Gate AlGaN/GaN High-Electron-Mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES 65 (12): 5365–72.
Chicago author-date (all authors)
Stockman, Arno, Fabrizio Masin, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Benoit Bakeroot, and Peter Moens. 2018. “Gate Conduction Mechanisms and Lifetime Modeling of P-Gate AlGaN/GaN High-Electron-Mobility Transistors.” IEEE TRANSACTIONS ON ELECTRON DEVICES 65 (12): 5365–5372.
Vancouver
1.
Stockman A, Masin F, Meneghini M, Zanoni E, Meneghesso G, Bakeroot B, et al. Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018;65(12):5365–72.
IEEE
[1]
A. Stockman et al., “Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 12, pp. 5365–5372, 2018.
@article{8583074,
  author       = {Stockman, Arno and Masin, Fabrizio and Meneghini, Matteo and Zanoni, Enrico and Meneghesso, Gaudenzio and Bakeroot, Benoit and Moens, Peter},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {Electrical and Electronic Engineering,Electronic,Optical and Magnetic Materials},
  language     = {eng},
  number       = {12},
  pages        = {5365--5372},
  publisher    = {IEEE},
  title        = {Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors},
  url          = {http://dx.doi.org/10.1109/ted.2018.2877262},
  volume       = {65},
  year         = {2018},
}

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