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Citation

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Chicago
Tajalli, A., Arno Stockman, M. Meneghini, S. Mouhoubi, A. Banerjee, S. Gerardin, M. Bagatin, et al. 2018. “Dynamic-ron Control via Proton Irradiation in AlGaN/GaN Transistors.” In PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) , 92–95. IEEE.
APA
Tajalli, A., Stockman, A., Meneghini, M., Mouhoubi, S., Banerjee, A., Gerardin, S., Bagatin, M., et al. (2018). Dynamic-ron control via proton irradiation in AlGaN/GaN transistors. PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp. 92–95). Presented at the 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), IEEE.
Vancouver
1.
Tajalli A, Stockman A, Meneghini M, Mouhoubi S, Banerjee A, Gerardin S, et al. Dynamic-ron control via proton irradiation in AlGaN/GaN transistors. PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) . IEEE; 2018. p. 92–5.
MLA
Tajalli, A. et al. “Dynamic-ron Control via Proton Irradiation in AlGaN/GaN Transistors.” PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) . IEEE, 2018. 92–95. Print.
@inproceedings{8583071,
  author       = {Tajalli, A. and Stockman, Arno and Meneghini, M. and Mouhoubi, S. and Banerjee, A. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Zanoni, E. and Tack, M. and Bakeroot, Benoit and Moens, P. and Meneghesso, G.},
  booktitle    = {PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) },
  isbn         = {9781538629277},
  issn         = {1063-6854},
  language     = {eng},
  location     = {Chicago, IL },
  pages        = {92--95},
  publisher    = {IEEE},
  title        = {Dynamic-ron control via proton irradiation in AlGaN/GaN transistors},
  url          = {http://dx.doi.org/10.1109/ispsd.2018.8393610},
  year         = {2018},
}

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