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Influence of the chalcogen element on the filament stability in Culn(Te,Se,S)(2)/Al2O3 filamentary switching devices

(2018) ACS APPLIED MATERIALS & INTERFACES. 10(17). p.14835-14842
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Abstract
In this paper, we report on the use of CuInX2 (X = Te, Se, S) as a cation supply layer in filamentary switching applications. Being used as absorber layers in solar cells, we take advantage of the reported Cu ionic conductivity of these materials to investigate the effect of the chalcogen element on filament stability. In situ X-ray diffraction showed material stability attractive for back end-of-line in semiconductor industry. When integrated in 580 mu m diameter memory cells, more volatile switching was found at low compliance current using CuInS2 and CuInSe2 compared to CuInTe2, which is ascribed to the natural tendency for Cu to diffuse back from the switching layer to the cation supply layer because of the larger difference in electrochemical potential using Se or S. Low-current and scaled behavior was also confirmed using conductive atomic force microscopy. Hence, by varying the chalcogen element, a method is presented to modulate the filament filament volatility Cu potential stability.
Keywords
THERMAL-STABILITY, MEMORY DEVICES, SOLAR-CELLS, THIN-FILMS, MIGRATION, CUINS2, CBRAM, chalcogenide, CBRAM, conductive bridge random access memory, selector, volatile filament, thermal stability, electrical functionality, AFM

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Citation

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Chicago
Ahmad, Tareq, Wouter Devulder, Karl Opsomer, Matthias Minjauw, Umberto Celano, Thomas Hantschel, Wilfried Vandervorst, Ludovic Goux, Gouri Sankar Kar, and Christophe Detavernier. 2018. “Influence of the Chalcogen Element on the Filament Stability in Culn(Te,Se,S)(2)/Al2O3 Filamentary Switching Devices.” Acs Applied Materials & Interfaces 10 (17): 14835–14842.
APA
Ahmad, T., Devulder, W., Opsomer, K., Minjauw, M., Celano, U., Hantschel, T., Vandervorst, W., et al. (2018). Influence of the chalcogen element on the filament stability in Culn(Te,Se,S)(2)/Al2O3 filamentary switching devices. ACS APPLIED MATERIALS & INTERFACES, 10(17), 14835–14842.
Vancouver
1.
Ahmad T, Devulder W, Opsomer K, Minjauw M, Celano U, Hantschel T, et al. Influence of the chalcogen element on the filament stability in Culn(Te,Se,S)(2)/Al2O3 filamentary switching devices. ACS APPLIED MATERIALS & INTERFACES. 2018;10(17):14835–42.
MLA
Ahmad, Tareq et al. “Influence of the Chalcogen Element on the Filament Stability in Culn(Te,Se,S)(2)/Al2O3 Filamentary Switching Devices.” ACS APPLIED MATERIALS & INTERFACES 10.17 (2018): 14835–14842. Print.
@article{8580172,
  abstract     = {In this paper, we report on the use of CuInX2 (X = Te, Se, S) as a cation supply layer in filamentary switching applications. Being used as absorber layers in solar cells, we take advantage of the reported Cu ionic conductivity of these materials to investigate the effect of the chalcogen element on filament stability. In situ X-ray diffraction showed material stability attractive for back end-of-line in semiconductor industry. When integrated in 580 mu m diameter memory cells, more volatile switching was found at low compliance current using CuInS2 and CuInSe2 compared to CuInTe2, which is ascribed to the natural tendency for Cu to diffuse back from the switching layer to the cation supply layer because of the larger difference in electrochemical potential using Se or S. Low-current and scaled behavior was also confirmed using conductive atomic force microscopy. Hence, by varying the chalcogen element, a method is presented to modulate the filament filament volatility Cu potential stability.},
  author       = {Ahmad, Tareq and Devulder, Wouter and Opsomer, Karl and Minjauw, Matthias and Celano, Umberto and Hantschel, Thomas and Vandervorst, Wilfried and Goux, Ludovic and Kar, Gouri Sankar and Detavernier, Christophe},
  issn         = {1944-8244},
  journal      = {ACS APPLIED MATERIALS \& INTERFACES},
  language     = {eng},
  number       = {17},
  pages        = {14835--14842},
  title        = {Influence of the chalcogen element on the filament stability in Culn(Te,Se,S)(2)/Al2O3 filamentary switching devices},
  url          = {http://dx.doi.org/10.1021/acsami.7b18228},
  volume       = {10},
  year         = {2018},
}

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