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Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

(2018) IEEE JOURNAL OF PHOTOVOLTAICS. 8(6). p.1539-1545
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Abstract
A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H 2 ) plasma treatment followed by in situ intrinsic hydrogenated amorphous silicon (a-Si:H) deposition has been investigated. The impact of H 2 gas flow rate and H 2 plasma processing time on the a-Si:H/c-Si interface passivation quality is studied. Optimal H 2 plasma processing conditions result in the best effective minority carrier lifetime of up to 2.5 ms at an injection level of 1 × 10 15 cm −3 , equivalent to the best effective surface recombination velocity of 4 cm/s. The reasons that enable such superior passivation quality are discussed in this paper based on the characterization of the a-Si:H/c-Si interface and c-Si substrate using transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, and deep-level transient spectroscopy.
Keywords
Hydrogenated amorphous silicon (a-Si:H), hydrogen (H2 ) plasma, passivation, silicon heterojunction (SHJ) solar cells, annealing, amorphous materials, photovoltaic cells

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Chicago
Xu, Menglei, Chong Wang, Twan Bearda, Eddy Simoen, Hariharsudan Sivaramakrishnan Radhakrishnan, Ivan Gordon, Wei Li, Jozef Szlufcik, and Jef Poortmans. 2018. “Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition.” Ieee Journal of Photovoltaics 8 (6): 1539–1545.
APA
Xu, M., Wang, C., Bearda, T., Simoen, E., Sivaramakrishnan Radhakrishnan, H., Gordon, I., Li, W., et al. (2018). Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition. IEEE JOURNAL OF PHOTOVOLTAICS, 8(6), 1539–1545.
Vancouver
1.
Xu M, Wang C, Bearda T, Simoen E, Sivaramakrishnan Radhakrishnan H, Gordon I, et al. Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition. IEEE JOURNAL OF PHOTOVOLTAICS. US: IEEE; 2018;8(6):1539–45.
MLA
Xu, Menglei et al. “Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition.” IEEE JOURNAL OF PHOTOVOLTAICS 8.6 (2018): 1539–1545. Print.
@article{8579655,
  abstract     = {A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H 2 ) plasma treatment followed by in situ intrinsic hydrogenated amorphous silicon (a-Si:H) deposition has been investigated. The impact of H 2 gas flow rate and H 2 plasma processing time on the a-Si:H/c-Si interface passivation quality is studied. Optimal H 2 plasma processing conditions result in the best effective minority carrier lifetime of up to 2.5 ms at an injection level of 1 {\texttimes} 10 15 cm \ensuremath{-}3 , equivalent to the best effective surface recombination velocity of 4 cm/s. The reasons that enable such superior passivation quality are discussed in this paper based on the characterization of the a-Si:H/c-Si interface and c-Si substrate using transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, and deep-level transient spectroscopy.},
  author       = {Xu, Menglei and Wang, Chong and Bearda, Twan and Simoen, Eddy and Sivaramakrishnan Radhakrishnan, Hariharsudan and Gordon, Ivan and Li, Wei and Szlufcik, Jozef and Poortmans, Jef},
  journal      = {IEEE JOURNAL OF PHOTOVOLTAICS},
  language     = {eng},
  number       = {6},
  pages        = {1539--1545},
  publisher    = {IEEE},
  title        = {Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition},
  url          = {http://dx.doi.org/10.1109/JPHOTOV.2018.2871329},
  volume       = {8},
  year         = {2018},
}

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