
III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser
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- Amin Abbasi (UGent) , Leili Abdollahi Shiramin (UGent) , Bart Moeneclaey (UGent) , Jochem Verbist, Xin Yin (UGent) , Johan Bauwelinck (UGent) , Dries Van Thourhout (UGent) , Günther Roelkens (UGent) and Geert Morthier (UGent)
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8578532
- MLA
- Abbasi, Amin, et al. “III–V-on-Silicon C-Band High-Speed Electro-Absorption-Modulated DFB Laser.” JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 36, no. 2, Institute of Electrical and Electronics Engineers (IEEE), 2018, pp. 252–57, doi:10.1109/jlt.2017.2743044.
- APA
- Abbasi, A., Abdollahi Shiramin, L., Moeneclaey, B., Verbist, J., Yin, X., Bauwelinck, J., … Morthier, G. (2018). III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser. JOURNAL OF LIGHTWAVE TECHNOLOGY, 36(2), 252–257. https://doi.org/10.1109/jlt.2017.2743044
- Chicago author-date
- Abbasi, Amin, Leili Abdollahi Shiramin, Bart Moeneclaey, Jochem Verbist, Xin Yin, Johan Bauwelinck, Dries Van Thourhout, Günther Roelkens, and Geert Morthier. 2018. “III–V-on-Silicon C-Band High-Speed Electro-Absorption-Modulated DFB Laser.” JOURNAL OF LIGHTWAVE TECHNOLOGY 36 (2): 252–57. https://doi.org/10.1109/jlt.2017.2743044.
- Chicago author-date (all authors)
- Abbasi, Amin, Leili Abdollahi Shiramin, Bart Moeneclaey, Jochem Verbist, Xin Yin, Johan Bauwelinck, Dries Van Thourhout, Günther Roelkens, and Geert Morthier. 2018. “III–V-on-Silicon C-Band High-Speed Electro-Absorption-Modulated DFB Laser.” JOURNAL OF LIGHTWAVE TECHNOLOGY 36 (2): 252–257. doi:10.1109/jlt.2017.2743044.
- Vancouver
- 1.Abbasi A, Abdollahi Shiramin L, Moeneclaey B, Verbist J, Yin X, Bauwelinck J, et al. III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser. JOURNAL OF LIGHTWAVE TECHNOLOGY. 2018;36(2):252–7.
- IEEE
- [1]A. Abbasi et al., “III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser,” JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 36, no. 2, pp. 252–257, 2018.
@article{8578532, author = {{Abbasi, Amin and Abdollahi Shiramin, Leili and Moeneclaey, Bart and Verbist, Jochem and Yin, Xin and Bauwelinck, Johan and Van Thourhout, Dries and Roelkens, Günther and Morthier, Geert}}, issn = {{0733-8724}}, journal = {{JOURNAL OF LIGHTWAVE TECHNOLOGY}}, language = {{eng}}, number = {{2}}, pages = {{252--257}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser}}, url = {{http://doi.org/10.1109/jlt.2017.2743044}}, volume = {{36}}, year = {{2018}}, }
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