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III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser

Amin Abbasi (UGent) , Leili Abdollahi Shiramin (UGent) , Bart Moeneclaey (UGent) , Jochem Verbist (UGent) , Xin Yin (UGent) , Johan Bauwelinck (UGent) , Dries Van Thourhout (UGent) , Günther Roelkens (UGent) and Geert Morthier (UGent)
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Citation

Please use this url to cite or link to this publication:

MLA
Abbasi, Amin, et al. “III–V-on-Silicon C-Band High-Speed Electro-Absorption-Modulated DFB Laser.” JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 36, no. 2, Institute of Electrical and Electronics Engineers (IEEE), 2018, pp. 252–57.
APA
Abbasi, A., Abdollahi Shiramin, L., Moeneclaey, B., Verbist, J., Yin, X., Bauwelinck, J., … Morthier, G. (2018). III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser. JOURNAL OF LIGHTWAVE TECHNOLOGY, 36(2), 252–257.
Chicago author-date
Abbasi, Amin, Leili Abdollahi Shiramin, Bart Moeneclaey, Jochem Verbist, Xin Yin, Johan Bauwelinck, Dries Van Thourhout, Günther Roelkens, and Geert Morthier. 2018. “III–V-on-Silicon C-Band High-Speed Electro-Absorption-Modulated DFB Laser.” JOURNAL OF LIGHTWAVE TECHNOLOGY 36 (2): 252–57.
Chicago author-date (all authors)
Abbasi, Amin, Leili Abdollahi Shiramin, Bart Moeneclaey, Jochem Verbist, Xin Yin, Johan Bauwelinck, Dries Van Thourhout, Günther Roelkens, and Geert Morthier. 2018. “III–V-on-Silicon C-Band High-Speed Electro-Absorption-Modulated DFB Laser.” JOURNAL OF LIGHTWAVE TECHNOLOGY 36 (2): 252–257.
Vancouver
1.
Abbasi A, Abdollahi Shiramin L, Moeneclaey B, Verbist J, Yin X, Bauwelinck J, et al. III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser. JOURNAL OF LIGHTWAVE TECHNOLOGY. 2018;36(2):252–7.
IEEE
[1]
A. Abbasi et al., “III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser,” JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 36, no. 2, pp. 252–257, 2018.
@article{8578532,
  author       = {Abbasi, Amin and Abdollahi Shiramin, Leili and Moeneclaey, Bart and Verbist, Jochem and Yin, Xin and Bauwelinck, Johan and Van Thourhout, Dries and Roelkens, Günther and Morthier, Geert},
  issn         = {0733-8724},
  journal      = {JOURNAL OF LIGHTWAVE TECHNOLOGY},
  language     = {eng},
  number       = {2},
  pages        = {252--257},
  publisher    = {Institute of Electrical and Electronics Engineers (IEEE)},
  title        = {III–V-on-silicon C-band high-speed electro-absorption-modulated DFB laser},
  url          = {http://dx.doi.org/10.1109/jlt.2017.2743044},
  volume       = {36},
  year         = {2018},
}

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