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70 Gb/s 0.87 pJ/bit GeSi EAM driver in 55 nm SiGe BiCMOS

(2018) p.1-3
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Citation

Please use this url to cite or link to this publication:

MLA
Ramon, Hannes, Joris Lambrecht, Jochem Verbist, et al. “70 Gb/s 0.87 pJ/bit GeSi EAM Driver in 55 Nm SiGe BiCMOS.” 2018. 1–3. Print.
APA
Ramon, H., Lambrecht, J., Verbist, J., Vanhoecke, M., Srinivasan, S. A., De Heyn, P., Van Campenhout, J., et al. (2018). 70 Gb/s 0.87 pJ/bit GeSi EAM driver in 55 nm SiGe BiCMOS (pp. 1–3). Presented at the ECOC2018, the 44th European Conference on Optical Communications.
Chicago author-date
Ramon, Hannes, Joris Lambrecht, Jochem Verbist, Michael Vanhoecke, Srinivasan Ashwyn Srinivasan, Peter De Heyn, Joris Van Campenhout, Peter Ossieur, Xin Yin, and Johan Bauwelinck. 2018. “70 Gb/s 0.87 pJ/bit GeSi EAM Driver in 55 Nm SiGe BiCMOS.” In , 1–3.
Chicago author-date (all authors)
Ramon, Hannes, Joris Lambrecht, Jochem Verbist, Michael Vanhoecke, Srinivasan Ashwyn Srinivasan, Peter De Heyn, Joris Van Campenhout, Peter Ossieur, Xin Yin, and Johan Bauwelinck. 2018. “70 Gb/s 0.87 pJ/bit GeSi EAM Driver in 55 Nm SiGe BiCMOS.” In , 1–3.
Vancouver
1.
Ramon H, Lambrecht J, Verbist J, Vanhoecke M, Srinivasan SA, De Heyn P, et al. 70 Gb/s 0.87 pJ/bit GeSi EAM driver in 55 nm SiGe BiCMOS. 2018. p. 1–3.
IEEE
[1]
H. Ramon et al., “70 Gb/s 0.87 pJ/bit GeSi EAM driver in 55 nm SiGe BiCMOS,” presented at the ECOC2018, the 44th European Conference on Optical Communications, Roma, Italy, 2018, pp. 1–3.
@inproceedings{8578342,
  author       = {Ramon, Hannes and Lambrecht, Joris and Verbist, Jochem and Vanhoecke, Michael and Srinivasan, Srinivasan Ashwyn and De Heyn, Peter and Van Campenhout, Joris and Ossieur, Peter and Yin, Xin and Bauwelinck, Johan},
  isbn         = {978-1-5386-4862-9},
  language     = {eng},
  location     = {Roma, Italy},
  pages        = {1--3},
  title        = {70 Gb/s 0.87 pJ/bit GeSi EAM driver in 55 nm SiGe BiCMOS},
  year         = {2018},
}