Advanced search
2 files | 6.12 MB

Nanophotonic Pockels modulators on a silicon nitride platform

Koen Alexander (UGent) , John Puthenparampil George (UGent) , Jochem Verbist (UGent) , Kristiaan Neyts (UGent) , Bart Kuyken (UGent) , Dries Van Thourhout (UGent) and Jeroen Beeckman (UGent)
Author
Organization
Abstract
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (alpha approximate to 1 dB cm(-1)). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.
Keywords
PZT THIN-FILMS, OPTICAL MODULATOR, ELECTROOPTIC MODULATOR, WAVELENGTHS, BANDWIDTH, CAPACITOR, CIRCUITS, DEVICES, CHIP

Downloads

  • 2018 NatComm Alexander.pdf
    • full text
    • |
    • open access
    • |
    • PDF
    • |
    • 1.23 MB
  • 2018 NatComm Alexander suppl.pdf
    • supplementary material
    • |
    • open access
    • |
    • PDF
    • |
    • 4.89 MB

Citation

Please use this url to cite or link to this publication:

Chicago
Alexander, Koen, John Puthenparampil George, Jochem Verbist, Kristiaan Neyts, Bart Kuyken, Dries Van Thourhout, and Jeroen Beeckman. 2018. “Nanophotonic Pockels Modulators on a Silicon Nitride Platform.” Nature Communications 9.
APA
Alexander, K., Puthenparampil George, J., Verbist, J., Neyts, K., Kuyken, B., Van Thourhout, D., & Beeckman, J. (2018). Nanophotonic Pockels modulators on a silicon nitride platform. NATURE COMMUNICATIONS, 9.
Vancouver
1.
Alexander K, Puthenparampil George J, Verbist J, Neyts K, Kuyken B, Van Thourhout D, et al. Nanophotonic Pockels modulators on a silicon nitride platform. NATURE COMMUNICATIONS. 2018;9.
MLA
Alexander, Koen, John Puthenparampil George, Jochem Verbist, et al. “Nanophotonic Pockels Modulators on a Silicon Nitride Platform.” NATURE COMMUNICATIONS 9 (2018): n. pag. Print.
@article{8574558,
  abstract     = {Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (alpha approximate to 1 dB cm(-1)). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.},
  articleno    = {3444},
  author       = {Alexander, Koen and Puthenparampil George, John and Verbist, Jochem and Neyts, Kristiaan and Kuyken, Bart and Van Thourhout, Dries and Beeckman, Jeroen},
  issn         = {2041-1723},
  journal      = {NATURE COMMUNICATIONS},
  language     = {eng},
  pages        = {6},
  title        = {Nanophotonic Pockels modulators on a silicon nitride platform},
  url          = {http://dx.doi.org/10.1038/s41467-018-05846-6},
  volume       = {9},
  year         = {2018},
}

Altmetric
View in Altmetric
Web of Science
Times cited: