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Electrical properties of extended defects in strain relaxed GeSn

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Abstract
We report the electrical properties of 60 degrees dislocations originating from the +1.2% lattice mismatch between an unintentionally doped, 315 nm thick Ge0.922Sn0.078 layer (58% relaxed) and the underlying Ge substrate, using deep level transient spectroscopy. The 60 degrees dislocations are found to be split into Shockley partials, binding a stacking fault. The dislocations exhibit a band-like distribution of electronic states in the bandgap, with the highest occupied defect state at similar to E-V + 0.15 eV, indicating no interaction with point defects in the dislocation's strain field. A small capture cross-section of 1.5 x 10(-19) cm(2) with a capture barrier of 60 meV is observed, indicating a donor-like nature of the defect-states. Thus, these dislocation-states are not the source of unintentional p-type doping in the Ge0.922Sn0.078 layer. Importantly, we show that the resolved 60 degrees dislocation-states act as a source of leakage current by thermally generating minority electrons via the Shockley-ReadHall mechanism.
Keywords
MISFIT DISLOCATIONS, SEMICONDUCTORS, SILICON, SI, HETEROSTRUCTURES, RECOMBINATION, GROWTH, LAYERS

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Chicago
Gupta, Somya, Eddy Simoen, Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, et al. 2018. “Electrical Properties of Extended Defects in Strain Relaxed GeSn.” Applied Physics Letters 113 (2).
APA
Gupta, Somya, Simoen, E., Loo, R., Shimura, Y., Porret, C., Gencarelli, F., Paredis, K., et al. (2018). Electrical properties of extended defects in strain relaxed GeSn. APPLIED PHYSICS LETTERS, 113(2).
Vancouver
1.
Gupta S, Simoen E, Loo R, Shimura Y, Porret C, Gencarelli F, et al. Electrical properties of extended defects in strain relaxed GeSn. APPLIED PHYSICS LETTERS. 2018;113(2).
MLA
Gupta, Somya et al. “Electrical Properties of Extended Defects in Strain Relaxed GeSn.” APPLIED PHYSICS LETTERS 113.2 (2018): n. pag. Print.
@article{8569506,
  abstract     = {We report the electrical properties of 60 degrees dislocations originating from the +1.2% lattice mismatch between an unintentionally doped, 315 nm thick Ge0.922Sn0.078 layer (58% relaxed) and the underlying Ge substrate, using deep level transient spectroscopy. The 60 degrees dislocations are found to be split into Shockley partials, binding a stacking fault. The dislocations exhibit a band-like distribution of electronic states in the bandgap, with the highest occupied defect state at similar to E-V + 0.15 eV, indicating no interaction with point defects in the dislocation's strain field. A small capture cross-section of 1.5 x 10(-19) cm(2) with a capture barrier of 60 meV is observed, indicating a donor-like nature of the defect-states. Thus, these dislocation-states are not the source of unintentional p-type doping in the Ge0.922Sn0.078 layer. Importantly, we show that the resolved 60 degrees dislocation-states act as a source of leakage current by thermally generating minority electrons via the Shockley-ReadHall mechanism.},
  articleno    = {022102},
  author       = {Gupta, Somya and Simoen, Eddy and Loo, Roger and Shimura, Yosuke and Porret, Clement and Gencarelli, Federica and Paredis, Kristof and Bender, Hugo and Lauwaert, Johan and Vrielinck, Henk and Heyns, Marc},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  keywords     = {MISFIT DISLOCATIONS,SEMICONDUCTORS,SILICON,SI,HETEROSTRUCTURES,RECOMBINATION,GROWTH,LAYERS},
  language     = {eng},
  number       = {2},
  pages        = {5},
  title        = {Electrical properties of extended defects in strain relaxed GeSn},
  url          = {http://dx.doi.org/10.1063/1.5034573},
  volume       = {113},
  year         = {2018},
}

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