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Impurity dominated thin film growth

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Abstract
Magnetron sputter deposition was applied to grow thin metal films in the presence of impurities. These impurities are ambient gas molecules and/or atoms from the residual gas present in the vacuum chamber. Seven materials were investigated: four single element metals (Al, Ag, Cu, and Cr), two widely applied alloys (Cu55Ni45 and Ni90Cr10), and one high entropy alloy (CoCrCuFeNi). The thin films were analyzed using X-ray diffraction to determine the domain size, the film texture, and the lattice parameter. The same trend for all studied materials is observed. When the ratio between the impurity and metal flux towards the substrate is low, the domain size is not affected by the presence of the impurities. In this regime, the incorporation of the impurities affects the lattice parameter. At high flux ratios, the change of the domain size can be described by a power law with the exponent equal to -1/2 for all studied materials. A kinetic Monte Carlo code is used to demonstrate this observed trend.
Keywords
GRAIN-GROWTH, MECHANICAL-PROPERTIES, DEPOSITION PARAMETERS, ELECTROPLATED COPPER, MO FILMS, OXYGEN, NUCLEATION, STRESS, MICROSTRUCTURE, TEXTURE

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Chicago
Cougnon, Florian, Dulmaa Altangerel, Robin Dedoncker, R Galbadrakh, and Diederik Depla. 2018. “Impurity Dominated Thin Film Growth.” Applied Physics Letters 112 (22).
APA
Cougnon, F., Altangerel, D., Dedoncker, R., Galbadrakh, R., & Depla, D. (2018). Impurity dominated thin film growth. APPLIED PHYSICS LETTERS, 112(22).
Vancouver
1.
Cougnon F, Altangerel D, Dedoncker R, Galbadrakh R, Depla D. Impurity dominated thin film growth. APPLIED PHYSICS LETTERS. 2018;112(22).
MLA
Cougnon, Florian, Dulmaa Altangerel, Robin Dedoncker, et al. “Impurity Dominated Thin Film Growth.” APPLIED PHYSICS LETTERS 112.22 (2018): n. pag. Print.
@article{8563588,
  abstract     = {Magnetron sputter deposition was applied to grow thin metal films in the presence of impurities. These impurities are ambient gas molecules and/or atoms from the residual gas present in the vacuum chamber. Seven materials were investigated: four single element metals (Al, Ag, Cu, and Cr), two widely applied alloys (Cu55Ni45 and Ni90Cr10), and one high entropy alloy (CoCrCuFeNi). The thin films were analyzed using X-ray diffraction to determine the domain size, the film texture, and the lattice parameter. The same trend for all studied materials is observed. When the ratio between the impurity and metal flux towards the substrate is low, the domain size is not affected by the presence of the impurities. In this regime, the incorporation of the impurities affects the lattice parameter. At high flux ratios, the change of the domain size can be described by a power law with the exponent equal to -1/2 for all studied materials. A kinetic Monte Carlo code is used to demonstrate this observed trend.},
  articleno    = {221903},
  author       = {Cougnon, Florian and Altangerel, Dulmaa and Dedoncker, Robin and Galbadrakh, R and Depla, Diederik},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  keyword      = {GRAIN-GROWTH,MECHANICAL-PROPERTIES,DEPOSITION PARAMETERS,ELECTROPLATED COPPER,MO FILMS,OXYGEN,NUCLEATION,STRESS,MICROSTRUCTURE,TEXTURE},
  language     = {eng},
  number       = {22},
  pages        = {5},
  title        = {Impurity dominated thin film growth},
  url          = {http://dx.doi.org/10.1063/1.5021528},
  volume       = {112},
  year         = {2018},
}

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