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Detailed structural and electrical characterization of plated crystalline silicon solar cells

C Dang, R Labie, Eddy Simoen (UGent) and J Poortmans
(2018) SOLAR ENERGY MATERIALS AND SOLAR CELLS. 184. p.57-66
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Abstract
In this paper a detailed study on the electrical characteristics of Ni/Cu/Ag plated p-type Passivated Emitter Rear Contact (PERC) silicon solar cells is reported. By comparing the cell performance of different cell groups, pseudo Fill Factor (pFF) degradation by laser-induced defects, is observed. High-power (hard) laser ablated cells exhibit a lower efficiency and faster degradation with thermal ageing. We also present structural and electrical characterization to further visualize and identify the responsible defects, which turn out to be laser-ablation-induced dislocations, penetrating the silicon emitter and base. Increasing the laser fluence gives rise to a higher dislocation density. These dislocations are further confirmed as active generation-recombination centers by Deep Level Transient Spectroscopy (DLTS) analysis. The laser ablation induced dislocations are unavoidable because even at insufficient laser fluence (0.48 J/cm(2)) to fully open the dielectric stack, the density is already at the level of 10(6)/cm(2). A substitutional nickel peak is also detected by DLTS, suggesting nickel diffusing into the silicon base during the sinter step. Whereas no copper levels are found in the p-type silicon base by DLTS even after thermal aging at 235 degrees C.
Keywords
PERC cells, Laser ablation, Ni/Cu/Ag plating, Defects, Reliability, Diffusion, COPPER DIFFUSION, LASER-ABLATION, NICKEL, SPECTROSCOPY, DEFECTS, IMPACT, LAYERS

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MLA
Dang, C., et al. “Detailed Structural and Electrical Characterization of Plated Crystalline Silicon Solar Cells.” SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 184, 2018, pp. 57–66, doi:10.1016/j.solmat.2018.04.016.
APA
Dang, C., Labie, R., Simoen, E., & Poortmans, J. (2018). Detailed structural and electrical characterization of plated crystalline silicon solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 184, 57–66. https://doi.org/10.1016/j.solmat.2018.04.016
Chicago author-date
Dang, C, R Labie, Eddy Simoen, and J Poortmans. 2018. “Detailed Structural and Electrical Characterization of Plated Crystalline Silicon Solar Cells.” SOLAR ENERGY MATERIALS AND SOLAR CELLS 184: 57–66. https://doi.org/10.1016/j.solmat.2018.04.016.
Chicago author-date (all authors)
Dang, C, R Labie, Eddy Simoen, and J Poortmans. 2018. “Detailed Structural and Electrical Characterization of Plated Crystalline Silicon Solar Cells.” SOLAR ENERGY MATERIALS AND SOLAR CELLS 184: 57–66. doi:10.1016/j.solmat.2018.04.016.
Vancouver
1.
Dang C, Labie R, Simoen E, Poortmans J. Detailed structural and electrical characterization of plated crystalline silicon solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 2018;184:57–66.
IEEE
[1]
C. Dang, R. Labie, E. Simoen, and J. Poortmans, “Detailed structural and electrical characterization of plated crystalline silicon solar cells,” SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 184, pp. 57–66, 2018.
@article{8560860,
  abstract     = {{In this paper a detailed study on the electrical characteristics of Ni/Cu/Ag plated p-type Passivated Emitter Rear Contact (PERC) silicon solar cells is reported. By comparing the cell performance of different cell groups, pseudo Fill Factor (pFF) degradation by laser-induced defects, is observed. High-power (hard) laser ablated cells exhibit a lower efficiency and faster degradation with thermal ageing. We also present structural and electrical characterization to further visualize and identify the responsible defects, which turn out to be laser-ablation-induced dislocations, penetrating the silicon emitter and base. Increasing the laser fluence gives rise to a higher dislocation density. These dislocations are further confirmed as active generation-recombination centers by Deep Level Transient Spectroscopy (DLTS) analysis. The laser ablation induced dislocations are unavoidable because even at insufficient laser fluence (0.48 J/cm(2)) to fully open the dielectric stack, the density is already at the level of 10(6)/cm(2). A substitutional nickel peak is also detected by DLTS, suggesting nickel diffusing into the silicon base during the sinter step. Whereas no copper levels are found in the p-type silicon base by DLTS even after thermal aging at 235 degrees C.}},
  author       = {{Dang, C and Labie, R and Simoen, Eddy and Poortmans, J}},
  issn         = {{0927-0248}},
  journal      = {{SOLAR ENERGY MATERIALS AND SOLAR CELLS}},
  keywords     = {{PERC cells,Laser ablation,Ni/Cu/Ag plating,Defects,Reliability,Diffusion,COPPER DIFFUSION,LASER-ABLATION,NICKEL,SPECTROSCOPY,DEFECTS,IMPACT,LAYERS}},
  language     = {{eng}},
  pages        = {{57--66}},
  title        = {{Detailed structural and electrical characterization of plated crystalline silicon solar cells}},
  url          = {{http://doi.org/10.1016/j.solmat.2018.04.016}},
  volume       = {{184}},
  year         = {{2018}},
}
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