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Low-power 56Gb/s NRZ microring modulator driver in 28nm FDSOI CMOS

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Abstract
High speed optical interconnects require low-power compact electro-optical transmit modules comprising driver circuits and optical modulators. This letter presents a low power 56 Gb/s non-return-to-zero CMOS inverter-based driver in 28 nm fully depleted silicon-on-insulator CMOS driving a 46 GHz silicon photonic microring modulator. The driver delivers 1 Vpp to the microring modulator from a 75 mVpp input while only consuming 40 mW (710 fJ/bit at 56 Gb/s). The realized transmitter shows 4 dB extinction ratio when running of a 1 V supply voltage. Transmission experiments up to 2 km of single mode fiber show a bit-error-ratio less than 1 . 10(-9) at 56 Gb/s.
Keywords
FRONT-END, TECHNOLOGY, 28nm, broadband amplifier, CMOS inverter, driver, FDSOI CMOS, silicon, photonic microring modulator, transmitter

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Citation

Please use this url to cite or link to this publication:

Chicago
Ramon, Hannes, Michael Vanhoecke, Jochem Verbist, Wouter Soenen, Peter De Heyn, Yoojin Ban, Marianna Pantouvaki, et al. 2018. “Low-power 56Gb/s NRZ Microring Modulator Driver in 28nm FDSOI CMOS.” Ieee Photonics Technology Letters 30 (5): 467–470.
APA
Ramon, H., Vanhoecke, M., Verbist, J., Soenen, W., De Heyn, P., Ban, Y., Pantouvaki, M., et al. (2018). Low-power 56Gb/s NRZ microring modulator driver in 28nm FDSOI CMOS. IEEE PHOTONICS TECHNOLOGY LETTERS, 30(5), 467–470.
Vancouver
1.
Ramon H, Vanhoecke M, Verbist J, Soenen W, De Heyn P, Ban Y, et al. Low-power 56Gb/s NRZ microring modulator driver in 28nm FDSOI CMOS. IEEE PHOTONICS TECHNOLOGY LETTERS. Piscataway: Ieee-inst Electrical Electronics Engineers Inc; 2018;30(5):467–70.
MLA
Ramon, Hannes, Michael Vanhoecke, Jochem Verbist, et al. “Low-power 56Gb/s NRZ Microring Modulator Driver in 28nm FDSOI CMOS.” IEEE PHOTONICS TECHNOLOGY LETTERS 30.5 (2018): 467–470. Print.
@article{8559385,
  abstract     = {High speed optical interconnects require low-power compact electro-optical transmit modules comprising driver circuits and optical modulators. This letter presents a low power 56 Gb/s non-return-to-zero CMOS inverter-based driver in 28 nm fully depleted silicon-on-insulator CMOS driving a 46 GHz silicon photonic microring modulator. The driver delivers 1 Vpp to the microring modulator from a 75 mVpp input while only consuming 40 mW (710 fJ/bit at 56 Gb/s). The realized transmitter shows 4 dB extinction ratio when running of a 1 V supply voltage. Transmission experiments up to 2 km of single mode fiber show a bit-error-ratio less than 1 . 10(-9) at 56 Gb/s.},
  author       = {Ramon, Hannes and Vanhoecke, Michael and Verbist, Jochem and Soenen, Wouter and De Heyn, Peter and Ban, Yoojin and Pantouvaki, Marianna and Van Campenhout, Joris and Ossieur, Peter and Yin, Xin and Bauwelinck, Johan},
  issn         = {1041-1135},
  journal      = {IEEE PHOTONICS TECHNOLOGY LETTERS},
  keyword      = {FRONT-END,TECHNOLOGY,28nm,broadband amplifier,CMOS inverter,driver,FDSOI CMOS,silicon,photonic microring modulator,transmitter},
  language     = {eng},
  number       = {5},
  pages        = {467--470},
  publisher    = {Ieee-inst Electrical Electronics Engineers Inc},
  title        = {Low-power 56Gb/s NRZ microring modulator driver in 28nm FDSOI CMOS},
  url          = {http://dx.doi.org/10.1109/LPT.2018.2799004},
  volume       = {30},
  year         = {2018},
}

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