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A DC-coupled 50 Gb/s 0.064 pJ/bit thin-oxide level shifter in 28 nm FDSOI CMOS

Hannes Ramon (UGent) , Jochem Verbist (UGent) , Michael Vanhoecke (UGent) , Joris Lambrecht (UGent) , Laurens Breyne (UGent) , Guy Torfs (UGent) and Johan Bauwelinck (UGent)
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Abstract
High-speed optical interconnects require compact, low-power driver electronics for optical modulators. Inverter based CMOS driver circuits show very low power consumption. However, the output swing is typically limited to the supply voltage which is typically insufficient for optical modulators, requiring a cascoded output driver and level shifter. In this work, we present a new DC-coupled thin-oxide level shifter topology in a 28 nm FDSOI CMOS technology enabling data rates up to 50 Gb/s with a power efficiency of 0.064 pJ/bit.
Keywords
FRONT-END, TRANSCEIVER, level shifter, FDSOI CMOS, 28 nm

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Citation

Please use this url to cite or link to this publication:

Chicago
Ramon, Hannes, Jochem Verbist, Michael Vanhoecke, Joris Lambrecht, Laurens Breyne, Guy Torfs, and Johan Bauwelinck. 2018. “A DC-coupled 50 Gb/s 0.064 pJ/bit Thin-oxide Level Shifter in 28 Nm FDSOI CMOS.” Ieice Electronics Express 15 (3): 1–7.
APA
Ramon, H., Verbist, J., Vanhoecke, M., Lambrecht, J., Breyne, L., Torfs, G., & Bauwelinck, J. (2018). A DC-coupled 50 Gb/s 0.064 pJ/bit thin-oxide level shifter in 28 nm FDSOI CMOS. IEICE ELECTRONICS EXPRESS, 15(3), 1–7.
Vancouver
1.
Ramon H, Verbist J, Vanhoecke M, Lambrecht J, Breyne L, Torfs G, et al. A DC-coupled 50 Gb/s 0.064 pJ/bit thin-oxide level shifter in 28 nm FDSOI CMOS. IEICE ELECTRONICS EXPRESS. Tokyo: Ieice-inst Electronics Information Communications Eng; 2018;15(3):1–7.
MLA
Ramon, Hannes et al. “A DC-coupled 50 Gb/s 0.064 pJ/bit Thin-oxide Level Shifter in 28 Nm FDSOI CMOS.” IEICE ELECTRONICS EXPRESS 15.3 (2018): 1–7. Print.
@article{8559072,
  abstract     = {High-speed optical interconnects require compact, low-power driver electronics for optical modulators. Inverter based CMOS driver circuits show very low power consumption. However, the output swing is typically limited to the supply voltage which is typically insufficient for optical modulators, requiring a cascoded output driver and level shifter. In this work, we present a new DC-coupled thin-oxide level shifter topology in a 28 nm FDSOI CMOS technology enabling data rates up to 50 Gb/s with a power efficiency of 0.064 pJ/bit.},
  articleno    = {20171085},
  author       = {Ramon, Hannes and Verbist, Jochem and Vanhoecke, Michael and Lambrecht, Joris and Breyne, Laurens and Torfs, Guy and Bauwelinck, Johan},
  issn         = {1349-2543},
  journal      = {IEICE ELECTRONICS EXPRESS},
  keywords     = {FRONT-END,TRANSCEIVER,level shifter,FDSOI CMOS,28 nm},
  language     = {eng},
  number       = {3},
  pages        = {20171085:1--20171085:7},
  publisher    = {Ieice-inst Electronics Information Communications Eng},
  title        = {A DC-coupled 50 Gb/s 0.064 pJ/bit thin-oxide level shifter in 28 nm FDSOI CMOS},
  url          = {http://dx.doi.org/10.1587/elex.15.20171085},
  volume       = {15},
  year         = {2018},
}

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