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Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices

E Gaubas, Eddy Simoen (UGent) and Jan Vanhellemont (UGent)
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SURFACE RECOMBINATION VELOCITY, TRANSIENT MICROWAVE-ABSORPTION, PROTON-IRRADIATED SILICON, BULK LIFETIME, OXYGEN PRECIPITATION, TRAPPING PROCESSES, SI, GE, LAYERS, PARAMETERS

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Citation

Please use this url to cite or link to this publication:

Chicago
Gaubas, E, Eddy Simoen, and Jan Vanhellemont. 2016. “Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices.” Ecs Journal of Solid State Science and Technology 5 (4): P3108–P3137.
APA
Gaubas, E, Simoen, E., & Vanhellemont, J. (2016). Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 5(4), P3108–P3137.
Vancouver
1.
Gaubas E, Simoen E, Vanhellemont J. Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2016;5(4):P3108–P3137.
MLA
Gaubas, E, Eddy Simoen, and Jan Vanhellemont. “Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 5.4 (2016): P3108–P3137. Print.
@article{8557678,
  author       = {Gaubas, E and Simoen, Eddy and Vanhellemont, Jan},
  issn         = {2162-8769},
  journal      = {ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY},
  keywords     = {SURFACE RECOMBINATION VELOCITY,TRANSIENT MICROWAVE-ABSORPTION,PROTON-IRRADIATED SILICON,BULK LIFETIME,OXYGEN PRECIPITATION,TRAPPING PROCESSES,SI,GE,LAYERS,PARAMETERS},
  language     = {eng},
  number       = {4},
  pages        = {P3108--P3137},
  title        = {Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices},
  url          = {http://dx.doi.org/10.1149/2.0201604jss},
  volume       = {5},
  year         = {2016},
}

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