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Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Suseendran Jayachandran, Eddy Simoen (UGent) , Koen Martens, Johan Meersschaut, Hugo Bender, Matty Caymax, Wilfried Vandervorst, Marc Heyns and Annelies Delabie
(2016) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 5(7). p.P396-P403
Author
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Keywords
CHEMICAL-VAPOR-DEPOSITION, TERMINATED SI(100), INITIAL OXIDATION, LOW-TEMPERATURES, SILICON, SURFACES, HYDROGEN, TRANSITION, EPITAXY, SINGLE

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Citation

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MLA
Jayachandran, Suseendran et al. “Quasi Two-dimensional Si-O Superlattices : Atomically Controlled Growth and Electrical Properties.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 5.7 (2016): P396–P403. Print.
APA
Jayachandran, S., Simoen, E., Martens, K., Meersschaut, J., Bender, H., Caymax, M., Vandervorst, W., et al. (2016). Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 5(7), P396–P403.
Chicago author-date
Jayachandran, Suseendran, Eddy Simoen, Koen Martens, Johan Meersschaut, Hugo Bender, Matty Caymax, Wilfried Vandervorst, Marc Heyns, and Annelies Delabie. 2016. “Quasi Two-dimensional Si-O Superlattices : Atomically Controlled Growth and Electrical Properties.” Ecs Journal of Solid State Science and Technology 5 (7): P396–P403.
Chicago author-date (all authors)
Jayachandran, Suseendran, Eddy Simoen, Koen Martens, Johan Meersschaut, Hugo Bender, Matty Caymax, Wilfried Vandervorst, Marc Heyns, and Annelies Delabie. 2016. “Quasi Two-dimensional Si-O Superlattices : Atomically Controlled Growth and Electrical Properties.” Ecs Journal of Solid State Science and Technology 5 (7): P396–P403.
Vancouver
1.
Jayachandran S, Simoen E, Martens K, Meersschaut J, Bender H, Caymax M, et al. Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2016;5(7):P396–P403.
IEEE
[1]
S. Jayachandran et al., “Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties,” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 5, no. 7, pp. P396–P403, 2016.
@article{8557603,
  author       = {{Jayachandran, Suseendran and Simoen, Eddy and Martens, Koen and Meersschaut, Johan and Bender, Hugo and Caymax, Matty and Vandervorst, Wilfried and Heyns, Marc and Delabie, Annelies}},
  issn         = {{2162-8769}},
  journal      = {{ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY}},
  keywords     = {{CHEMICAL-VAPOR-DEPOSITION,TERMINATED SI(100),INITIAL OXIDATION,LOW-TEMPERATURES,SILICON,SURFACES,HYDROGEN,TRANSITION,EPITAXY,SINGLE}},
  language     = {{eng}},
  number       = {{7}},
  pages        = {{P396--P403}},
  title        = {{Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties}},
  url          = {{http://dx.doi.org/10.1149/2.0111607jss}},
  volume       = {{5}},
  year         = {{2016}},
}
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