Academic Bibliography

 Search 200 years of publications by Ghent University researchers.
Advanced search
1 file | 784.08 KB
Add to list
  1. Search results
  2. A deep-level transient spectroscopy s...

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Eddy Simoen (UGent) , Suseendran Jayachandran, Annelies Delabie, Matty Caymax and Marc Heyns
(2017) PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 254(4).
Author
Organization
Abstract
The presence of deep levels in a silicon-oxygen (Si-O) superlattice (SL) deposited on p-type silicon substrates has been investigated by deep-level transient spectroscopy (DLTS) on thermally evaporated Cr Schottky barriers (SBs). The SLs have been fabricated with different thicknesses of the silicon interlayers, formed by chemical vapor deposition. It is shown that a broad band of hole traps is present near the surface of the SB, which is associated with the SL. In addition, the activation energy corresponding with the peak maximum shifts to higher values with respect to the valence band and gives rise to a higher trap concentration with increasing silicon interlayer thickness. It is proposed that these states are associated with the structural defects found in similar SL structures, that is, with the epitaxial quality and not with the SiO bonds in the atomic layers. The change in the DLT-spectra with silicon thickness could be related with the transformation of the structural defects from small self-interstitial clusters to stacking faults.
Keywords
deep-level transient spectroscopy, defects, Schottky barrier, silicon, superlattices, CHEMICAL-VAPOR-DEPOSITION, ELECTRICAL-PROPERTIES, ATOMIC LAYERS, DEFECTS, DISLOCATIONS, GROWTH

Downloads

  • Download
    (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 784.08 KB

Citation

Please use this url to cite or link to this publication:

MLA
Simoen, Eddy et al. “A Deep-level Transient Spectroscopy Study of P-type Silicon Schottky Barriers Containing a Si-O Superlattice.” PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254.4 (2017): n. pag. Print.
APA
Simoen, E., Jayachandran, S., Delabie, A., Caymax, M., & Heyns, M. (2017). A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(4). Presented at the International conference on Terahertz Emission, Metamaterials and Nanophotonics (TERAMETANANO).
Chicago author-date
Simoen, Eddy, Suseendran Jayachandran, Annelies Delabie, Matty Caymax, and Marc Heyns. 2017. “A Deep-level Transient Spectroscopy Study of P-type Silicon Schottky Barriers Containing a Si-O Superlattice.” Physica Status Solidi B-basic Solid State Physics 254 (4).
Chicago author-date (all authors)
Simoen, Eddy, Suseendran Jayachandran, Annelies Delabie, Matty Caymax, and Marc Heyns. 2017. “A Deep-level Transient Spectroscopy Study of P-type Silicon Schottky Barriers Containing a Si-O Superlattice.” Physica Status Solidi B-basic Solid State Physics 254 (4).
Vancouver
1.
Simoen E, Jayachandran S, Delabie A, Caymax M, Heyns M. A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2017;254(4).
IEEE
[1]
E. Simoen, S. Jayachandran, A. Delabie, M. Caymax, and M. Heyns, “A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice,” PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol. 254, no. 4, 2017.
@article{8557435,
  abstract     = {{The presence of deep levels in a silicon-oxygen (Si-O) superlattice (SL) deposited on p-type silicon substrates has been investigated by deep-level transient spectroscopy (DLTS) on thermally evaporated Cr Schottky barriers (SBs). The SLs have been fabricated with different thicknesses of the silicon interlayers, formed by chemical vapor deposition. It is shown that a broad band of hole traps is present near the surface of the SB, which is associated with the SL. In addition, the activation energy corresponding with the peak maximum shifts to higher values with respect to the valence band and gives rise to a higher trap concentration with increasing silicon interlayer thickness. It is proposed that these states are associated with the structural defects found in similar SL structures, that is, with the epitaxial quality and not with the SiO bonds in the atomic layers. The change in the DLT-spectra with silicon thickness could be related with the transformation of the structural defects from small self-interstitial clusters to stacking faults.}},
  articleno    = {{1600593}},
  author       = {{Simoen, Eddy and Jayachandran, Suseendran and Delabie, Annelies and Caymax, Matty and Heyns, Marc}},
  issn         = {{0370-1972}},
  journal      = {{PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS}},
  keywords     = {{deep-level transient spectroscopy,defects,Schottky barrier,silicon,superlattices,CHEMICAL-VAPOR-DEPOSITION,ELECTRICAL-PROPERTIES,ATOMIC LAYERS,DEFECTS,DISLOCATIONS,GROWTH}},
  language     = {{eng}},
  location     = {{Cartagena de Indias, Colombia}},
  number       = {{4}},
  pages        = {{5}},
  title        = {{A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice}},
  url          = {{http://dx.doi.org/10.1002/pssb.201600593}},
  volume       = {{254}},
  year         = {{2017}},
}
Altmetric
View in Altmetric
Web of Science
Times cited: