Optical transmitter based on a 1.3-mu m VCSEL and a SiGe driver circuit for short-reach applications and beyond
- Author
- Antonio Malacarne, Christian Neumeyr, Wouter Soenen (UGent) , Fabio Falconi, Claudio Porzi, Timo Aalto, Juergen Rosskopf, Johan Bauwelinck (UGent) and Antonella Bogoni
- Organization
- Abstract
- Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3-mu m region for intensity modulation (IM)/direct detection optical transmissions enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs' modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based IM speed consists of making use of dedicated driver circuits implementing feedforward equalization (FFE). In this paper, we present a transmitter assembly incorporating a four-channel 0.13-mu m SiGe driver circuit wire-bonded to a novel dual 1.3-mu m VCSEL array. The short-cavity indium phosphide buried tunnel junction VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5-V supply voltage only due to the implementation of a pseudobalanced regulator; it includes a two-tap asymmetric FFE, where magnitude, sign, relative delay, and pulse width distortion of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 and 4.5 km, respectively, for 28- and 40-Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 2(7)-1 and 2(31)-1 length, and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also includedt.
- Keywords
- 1530-NM VCSEL, TRANSMISSION, MODULATION, CMOS, LINK, Access networks, BiCMOS integrated circuits, optical fiber, optical, intensity modulation, optical interconnections, vertical cavity surface, emitting lasers
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8556953
- Chicago
- Malacarne, Antonio, Christian Neumeyr, Wouter Soenen, Fabio Falconi, Claudio Porzi, Timo Aalto, Juergen Rosskopf, Johan Bauwelinck, and Antonella Bogoni. 2018. “Optical Transmitter Based on a 1.3-mu m VCSEL and a SiGe Driver Circuit for Short-reach Applications and Beyond.” Journal of Lightwave Technology 36 (9): 1527–1536.
- APA
- Malacarne, Antonio, Neumeyr, C., Soenen, W., Falconi, F., Porzi, C., Aalto, T., Rosskopf, J., et al. (2018). Optical transmitter based on a 1.3-mu m VCSEL and a SiGe driver circuit for short-reach applications and beyond. JOURNAL OF LIGHTWAVE TECHNOLOGY, 36(9), 1527–1536.
- Vancouver
- 1.Malacarne A, Neumeyr C, Soenen W, Falconi F, Porzi C, Aalto T, et al. Optical transmitter based on a 1.3-mu m VCSEL and a SiGe driver circuit for short-reach applications and beyond. JOURNAL OF LIGHTWAVE TECHNOLOGY. Piscataway: Ieee-inst Electrical Electronics Engineers Inc; 2018;36(9):1527–36.
- MLA
- Malacarne, Antonio, Christian Neumeyr, Wouter Soenen, et al. “Optical Transmitter Based on a 1.3-mu m VCSEL and a SiGe Driver Circuit for Short-reach Applications and Beyond.” JOURNAL OF LIGHTWAVE TECHNOLOGY 36.9 (2018): 1527–1536. Print.
@article{8556953,
abstract = {Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3-mu m region for intensity modulation (IM)/direct detection optical transmissions enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs' modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based IM speed consists of making use of dedicated driver circuits implementing feedforward equalization (FFE). In this paper, we present a transmitter assembly incorporating a four-channel 0.13-mu m SiGe driver circuit wire-bonded to a novel dual 1.3-mu m VCSEL array. The short-cavity indium phosphide buried tunnel junction VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5-V supply voltage only due to the implementation of a pseudobalanced regulator; it includes a two-tap asymmetric FFE, where magnitude, sign, relative delay, and pulse width distortion of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 and 4.5 km, respectively, for 28- and 40-Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 2(7)-1 and 2(31)-1 length, and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also includedt.},
author = {Malacarne, Antonio and Neumeyr, Christian and Soenen, Wouter and Falconi, Fabio and Porzi, Claudio and Aalto, Timo and Rosskopf, Juergen and Bauwelinck, Johan and Bogoni, Antonella},
issn = {0733-8724},
journal = {JOURNAL OF LIGHTWAVE TECHNOLOGY},
keyword = {1530-NM VCSEL,TRANSMISSION,MODULATION,CMOS,LINK,Access networks,BiCMOS integrated circuits,optical fiber,optical,intensity modulation,optical interconnections,vertical cavity surface,emitting lasers},
language = {eng},
number = {9},
pages = {1527--1536},
publisher = {Ieee-inst Electrical Electronics Engineers Inc},
title = {Optical transmitter based on a 1.3-mu m VCSEL and a SiGe driver circuit for short-reach applications and beyond},
url = {http://dx.doi.org/10.1109/JLT.2017.2782882},
volume = {36},
year = {2018},
}
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