Photoluminescence of phosphorus atomic layer doped Ge grown on Si
- Author
- Yuji Yamamoto, Li-Wei Nien, Giovanni Capellini, Michele Virgilio, Ioan Costina, Markus Andreas Schubert, Winfried Seifert, Srinivasan Ashwyn Srinivasan (UGent) , Roger Loo, Giordano Scappucci, Diego Sabbagh, Anne Hesse, Junichi Murota, Thomas Schroeder and Bernd Tillack
- Organization
- Project
- Keywords
- gemanium, atomic layer doping, photoluminescence, phosporus, chemical vapor deposition, epitaxy
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8554398
- MLA
- Yamamoto, Yuji, et al. “Photoluminescence of Phosphorus Atomic Layer Doped Ge Grown on Si.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 32, no. 10, IOP Publishing, 2017, pp. 1–6, doi:10.1088/1361-6641/aa8499.
- APA
- Yamamoto, Y., Nien, L.-W., Capellini, G., Virgilio, M., Costina, I., Schubert, M. A., … Tillack, B. (2017). Photoluminescence of phosphorus atomic layer doped Ge grown on Si. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32(10), 1–6. https://doi.org/10.1088/1361-6641/aa8499
- Chicago author-date
- Yamamoto, Yuji, Li-Wei Nien, Giovanni Capellini, Michele Virgilio, Ioan Costina, Markus Andreas Schubert, Winfried Seifert, et al. 2017. “Photoluminescence of Phosphorus Atomic Layer Doped Ge Grown on Si.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32 (10): 1–6. https://doi.org/10.1088/1361-6641/aa8499.
- Chicago author-date (all authors)
- Yamamoto, Yuji, Li-Wei Nien, Giovanni Capellini, Michele Virgilio, Ioan Costina, Markus Andreas Schubert, Winfried Seifert, Srinivasan Ashwyn Srinivasan, Roger Loo, Giordano Scappucci, Diego Sabbagh, Anne Hesse, Junichi Murota, Thomas Schroeder, and Bernd Tillack. 2017. “Photoluminescence of Phosphorus Atomic Layer Doped Ge Grown on Si.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32 (10): 1–6. doi:10.1088/1361-6641/aa8499.
- Vancouver
- 1.Yamamoto Y, Nien L-W, Capellini G, Virgilio M, Costina I, Schubert MA, et al. Photoluminescence of phosphorus atomic layer doped Ge grown on Si. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2017;32(10):1–6.
- IEEE
- [1]Y. Yamamoto et al., “Photoluminescence of phosphorus atomic layer doped Ge grown on Si,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 32, no. 10, pp. 1–6, 2017.
@article{8554398,
articleno = {{104005}},
author = {{Yamamoto, Yuji and Nien, Li-Wei and Capellini, Giovanni and Virgilio, Michele and Costina, Ioan and Schubert, Markus Andreas and Seifert, Winfried and Srinivasan, Srinivasan Ashwyn and Loo, Roger and Scappucci, Giordano and Sabbagh, Diego and Hesse, Anne and Murota, Junichi and Schroeder, Thomas and Tillack, Bernd}},
issn = {{0268-1242}},
journal = {{SEMICONDUCTOR SCIENCE AND TECHNOLOGY}},
keywords = {{gemanium,atomic layer doping,photoluminescence,phosporus,chemical vapor deposition,epitaxy}},
language = {{eng}},
number = {{10}},
pages = {{104005:1--104005:6}},
publisher = {{IOP Publishing}},
title = {{Photoluminescence of phosphorus atomic layer doped Ge grown on Si}},
url = {{http://doi.org/10.1088/1361-6641/aa8499}},
volume = {{32}},
year = {{2017}},
}
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