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Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

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Organization
Project
Center for nano- and biophotonics (NB-Photonics)
Keywords
Laser, Homogeneous broadening, Silicon photonics

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Citation

Please use this url to cite or link to this publication:

Chicago
Srinivasan, Srinivasan Ashwyn, C. Porret, M. Pantouvaki, Y. Shimura, Pieter Geiregat, R. Loo, J. Van Campenhout, and Dries Van Thourhout. 2017. “Analysis of Homogeneous Broadening in N-type Doped Ge Layers on Si for Laser Application.” In 30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC), 311–312.
APA
Srinivasan, S. A., Porret, C., Pantouvaki, M., Shimura, Y., Geiregat, P., Loo, R., Van Campenhout, J., et al. (2017). Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application. 30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) (pp. 311–312). Presented at the 30th Annual Conference of the IEEE-Photonics-Society (IPC).
Vancouver
1.
Srinivasan SA, Porret C, Pantouvaki M, Shimura Y, Geiregat P, Loo R, et al. Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application. 30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC). 2017. p. 311–2.
MLA
Srinivasan, Srinivasan Ashwyn et al. “Analysis of Homogeneous Broadening in N-type Doped Ge Layers on Si for Laser Application.” 30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC). 2017. 311–312. Print.
@inproceedings{8547168,
  author       = {Srinivasan, Srinivasan Ashwyn and Porret, C. and Pantouvaki, M. and Shimura, Y. and Geiregat, Pieter and Loo, R. and Van Campenhout, J. and Van Thourhout, Dries},
  booktitle    = {30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC)},
  isbn         = {978-1-5090-6578-3},
  issn         = {2374-0140 },
  language     = {eng},
  location     = {Lake Buena Vista, Florida, USA},
  pages        = {311--312},
  title        = {Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application},
  year         = {2017},
}

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