Study of electrically active defects in epitaxial layers on silicon
- Author
- Eddy Simoen (UGent) , SK Dhayalan, S Jayachandran, S Gupta, F Gencarelli, A Hikavyy, R Loo, E Rosseel, A Delabie, M Caymax, R Langer, K Barla, Henk Vrielinck (UGent) and Johan Lauwaert (UGent)
- Organization
- Abstract
- Electrically active defects in silicon-based epitaxial layers on silicon substrates have been studied by Deep-Level Transient Spectroscopy (DLTS). Several aspects have been investigated, like, the impact of the pre-epi cleaning conditions and the effect of a post-deposition anneal on the deep-level properties. It is shown that the pre-cleaning thermal budget has a strong influence on the defects at the substrate/epi layer interface. At the same time, a post-deposition Forming Gas Anneal can passivate to a large extent the active defect states. Finally, it is shown that application of a post-deposition anneal increases the out-diffusion of carbon from a Si:C stressor layer into the p-type CZ substrate.
- Keywords
- LEVEL TRANSIENT SPECTROSCOPY
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8545418
- MLA
- Simoen, Eddy, et al. “Study of Electrically Active Defects in Epitaxial Layers on Silicon.” 2016 China Semiconductor Technology International Conference (CSTIC), edited by C Claeys et al., IEEE, 2016.
- APA
- Simoen, E., Dhayalan, S., Jayachandran, S., Gupta, S., Gencarelli, F., Hikavyy, A., … Lauwaert, J. (2016). Study of electrically active defects in epitaxial layers on silicon. In C. Claeys, H. Wu, Q. Lin, D. Huang, Y. Shi, S. Liang, … Q. Wang (Eds.), 2016 China semiconductor technology international conference (CSTIC). New York, NY, USA: IEEE.
- Chicago author-date
- Simoen, Eddy, SK Dhayalan, S Jayachandran, S Gupta, F Gencarelli, A Hikavyy, R Loo, et al. 2016. “Study of Electrically Active Defects in Epitaxial Layers on Silicon.” In 2016 China Semiconductor Technology International Conference (CSTIC), edited by C Claeys, H Wu, Q Lin, D Huang, Y Shi, S Liang, R Huang, et al. New York, NY, USA: IEEE.
- Chicago author-date (all authors)
- Simoen, Eddy, SK Dhayalan, S Jayachandran, S Gupta, F Gencarelli, A Hikavyy, R Loo, E Rosseel, A Delabie, M Caymax, R Langer, K Barla, Henk Vrielinck, and Johan Lauwaert. 2016. “Study of Electrically Active Defects in Epitaxial Layers on Silicon.” In 2016 China Semiconductor Technology International Conference (CSTIC), ed by. C Claeys, H Wu, Q Lin, D Huang, Y Shi, S Liang, R Huang, K Lai, Y Zhang, B Zhang, K Wu, J Yan, P Song, HL Lung, D Chen, and Q Wang. New York, NY, USA: IEEE.
- Vancouver
- 1.Simoen E, Dhayalan S, Jayachandran S, Gupta S, Gencarelli F, Hikavyy A, et al. Study of electrically active defects in epitaxial layers on silicon. In: Claeys C, Wu H, Lin Q, Huang D, Shi Y, Liang S, et al., editors. 2016 China semiconductor technology international conference (CSTIC). New York, NY, USA: IEEE; 2016.
- IEEE
- [1]E. Simoen et al., “Study of electrically active defects in epitaxial layers on silicon,” in 2016 China semiconductor technology international conference (CSTIC), Shanghai, PR China, 2016.
@inproceedings{8545418,
abstract = {{Electrically active defects in silicon-based epitaxial layers on silicon substrates have been studied by Deep-Level Transient Spectroscopy (DLTS). Several aspects have been investigated, like, the impact of the pre-epi cleaning conditions and the effect of a post-deposition anneal on the deep-level properties. It is shown that the pre-cleaning thermal budget has a strong influence on the defects at the substrate/epi layer interface. At the same time, a post-deposition Forming Gas Anneal can passivate to a large extent the active defect states. Finally, it is shown that application of a post-deposition anneal increases the out-diffusion of carbon from a Si:C stressor layer into the p-type CZ substrate.}},
author = {{Simoen, Eddy and Dhayalan, SK and Jayachandran, S and Gupta, S and Gencarelli, F and Hikavyy, A and Loo, R and Rosseel, E and Delabie, A and Caymax, M and Langer, R and Barla, K and Vrielinck, Henk and Lauwaert, Johan}},
booktitle = {{2016 China semiconductor technology international conference (CSTIC)}},
editor = {{Claeys, C and Wu, H and Lin, Q and Huang, D and Shi, Y and Liang, S and Huang, R and Lai, K and Zhang, Y and Zhang, B and Wu, K and Yan, J and Song, P and Lung, HL and Chen, D and Wang, Q}},
isbn = {{9781467388054}},
keywords = {{LEVEL TRANSIENT SPECTROSCOPY}},
language = {{eng}},
location = {{Shanghai, PR China}},
pages = {{3}},
publisher = {{IEEE}},
title = {{Study of electrically active defects in epitaxial layers on silicon}},
year = {{2016}},
}