Advanced search
1 file | 1.91 MB

Plasma enhanced atomic layer deposition of aluminum sulfide thin films

Jakob Kuhs (UGent) , Zeger Hens (UGent) and Christophe Detavernier (UGent)
Author
Organization
Abstract
Aluminum sulfide is a promising material for energy storage, photonics, and microelectronics applications. Most of these applications require thin films with a high control over layer thickness and composition making atomic layer deposition an ideal deposition technique. The authors report a plasma enhanced process for aluminum sulfide based on trimethylaluminum and H2S-plasma. The growth characteristics were studied using in situ spectroscopic ellipsometry, indicating linear growth at a rate of 1.2 angstrom/cycle at 90 degrees C. Self-saturated growth could be achieved in a temperature window ranging from 90 to 350 degrees C. The process relies on combustion reactions during the plasma step, as confirmed by the observation of CS2 using in situ mass spectrometry measurements. Ex situ x-ray photoelectron spectroscopy, x-ray diffraction, and scanning electron microscopy/energy-dispersive x-ray spectroscopy measurements showed that the deposited layers are amorphous and pinhole free.
Keywords
HYDROGEN-SULFIDE, ARC SPECTRUM, ZNS FILMS, BATTERIES, SULFUR, GROWTH, CONFORMALITY, MECHANISM, ION

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 1.91 MB

Citation

Please use this url to cite or link to this publication:

Chicago
Kuhs, Jakob, Zeger Hens, and Christophe Detavernier. 2018. “Plasma Enhanced Atomic Layer Deposition of Aluminum Sulfide Thin Films.” Journal of Vacuum Science & Technology A 36 (1).
APA
Kuhs, J., Hens, Z., & Detavernier, C. (2018). Plasma enhanced atomic layer deposition of aluminum sulfide thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(1).
Vancouver
1.
Kuhs J, Hens Z, Detavernier C. Plasma enhanced atomic layer deposition of aluminum sulfide thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2018;36(1).
MLA
Kuhs, Jakob, Zeger Hens, and Christophe Detavernier. “Plasma Enhanced Atomic Layer Deposition of Aluminum Sulfide Thin Films.” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 36.1 (2018): n. pag. Print.
@article{8541093,
  abstract     = {Aluminum sulfide is a promising material for energy storage, photonics, and microelectronics applications. Most of these applications require thin films with a high control over layer thickness and composition making atomic layer deposition an ideal deposition technique. The authors report a plasma enhanced process for aluminum sulfide based on trimethylaluminum and H2S-plasma. The growth characteristics were studied using in situ spectroscopic ellipsometry, indicating linear growth at a rate of 1.2 angstrom/cycle at 90 degrees C. Self-saturated growth could be achieved in a temperature window ranging from 90 to 350 degrees C. The process relies on combustion reactions during the plasma step, as confirmed by the observation of CS2 using in situ mass spectrometry measurements. Ex situ x-ray photoelectron spectroscopy, x-ray diffraction, and scanning electron microscopy/energy-dispersive x-ray spectroscopy measurements showed that the deposited layers are amorphous and pinhole free.},
  articleno    = {01A113},
  author       = {Kuhs, Jakob and Hens, Zeger and Detavernier, Christophe},
  issn         = {0734-2101},
  journal      = {JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY A},
  language     = {eng},
  number       = {1},
  pages        = {7},
  title        = {Plasma enhanced atomic layer deposition of aluminum sulfide thin films},
  url          = {http://dx.doi.org/10.1116/1.5003339},
  volume       = {36},
  year         = {2018},
}

Altmetric
View in Altmetric
Web of Science
Times cited: