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Microscopic study of dopant distribution in europium doped SrGa2S4 : impact on thermal quenching and phosphor performance

Lisa Martin UGent, Dirk Poelman UGent, Philippe Smet UGent and Jonas Joos UGent (2018) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 7(1). p.R3052-R3056
abstract
White light emitting diodes start to dominate lighting and display applications. However, the properties of the phosphors used in these devices strongly depend on synthesis conditions. A better understanding of how performance-determining mechanisms such as thermal quenching are influenced by synthesis conditions and sample composition is necessary to achieve the required standards in a goal-oriented strategy. In this paper, a microscopic thermal quenching study on green-emitting SrGa2S4:Eu2+ phosphors by means of cathodoluminescence spectroscopy and energy dispersive X-ray analysis in a scanning electron microscope is used to extend our knowledge beyond averaged information obtained on bulk material. Elemental and cathodoluminescence mapping at different temperatures made it possible to determine thermal quenching profiles for sub-micrometer sized areas. These revealed a broad range of local quenching temperatures for samples with ill-distributed dopant ions. For the associated activation energy an upper limit of 0.61 eV was identified, corresponding to the intrinsic thermal quenching of isolated europium ions. Furthermore, the results confirm a previously suggested thermal quenching model which involves the presence of both isolated and clustered dopant ions.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
PARTICLE-DIAGNOSIS APPROACH, LIGHT-EMITTING-DIODES, GARNET PHOSPHORS, WHITE LEDS, THIN-FILM, LUMINESCENCE, EMISSION, EU2+, PHOTOLUMINESCENCE, SPECTROSCOPY
journal title
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
ECS J. Solid State Sci. Technol.
volume
7
issue
1
pages
R3052 - R3056
Web of Science type
Article
Web of Science id
000424776000011
ISSN
2162-8769
DOI
10.1149/2.0341709jss
language
English
UGent publication?
yes
classification
A1
copyright statement
Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
id
8540142
handle
http://hdl.handle.net/1854/LU-8540142
date created
2017-12-04 12:20:34
date last changed
2018-06-27 14:25:10
@article{8540142,
  abstract     = {White light emitting diodes start to dominate lighting and display applications. However, the properties of the phosphors used in these devices strongly depend on synthesis conditions. A better understanding of how performance-determining mechanisms such as thermal quenching are influenced by synthesis conditions and sample composition is necessary to achieve the required standards in a goal-oriented strategy. In this paper, a microscopic thermal quenching study on green-emitting SrGa2S4:Eu2+ phosphors by means of cathodoluminescence spectroscopy and energy dispersive X-ray analysis in a scanning electron microscope is used to extend our knowledge beyond averaged information obtained on bulk material. Elemental and cathodoluminescence mapping at different temperatures made it possible to determine thermal quenching profiles for sub-micrometer sized areas. These revealed a broad range of local quenching temperatures for samples with ill-distributed dopant ions. For the associated activation energy an upper limit of 0.61 eV was identified, corresponding to the intrinsic thermal quenching of isolated europium ions. Furthermore, the results confirm a previously suggested thermal quenching model which involves the presence of both isolated and clustered dopant ions.},
  author       = {Martin, Lisa and Poelman, Dirk and Smet, Philippe and Joos, Jonas},
  issn         = {2162-8769},
  journal      = {ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY},
  keyword      = {PARTICLE-DIAGNOSIS APPROACH,LIGHT-EMITTING-DIODES,GARNET PHOSPHORS,WHITE LEDS,THIN-FILM,LUMINESCENCE,EMISSION,EU2+,PHOTOLUMINESCENCE,SPECTROSCOPY},
  language     = {eng},
  number       = {1},
  pages        = {R3052--R3056},
  title        = {Microscopic study of dopant distribution in europium doped SrGa2S4 : impact on thermal quenching and phosphor performance},
  url          = {http://dx.doi.org/10.1149/2.0341709jss},
  volume       = {7},
  year         = {2018},
}

Chicago
Martin, Lisa, Dirk Poelman, Philippe Smet, and Jonas Joos. 2018. “Microscopic Study of Dopant Distribution in Europium Doped SrGa2S4 : Impact on Thermal Quenching and Phosphor Performance.” Ecs Journal of Solid State Science and Technology 7 (1): R3052–R3056.
APA
Martin, L., Poelman, D., Smet, P., & Joos, J. (2018). Microscopic study of dopant distribution in europium doped SrGa2S4 : impact on thermal quenching and phosphor performance. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 7(1), R3052–R3056.
Vancouver
1.
Martin L, Poelman D, Smet P, Joos J. Microscopic study of dopant distribution in europium doped SrGa2S4 : impact on thermal quenching and phosphor performance. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2018;7(1):R3052–R3056.
MLA
Martin, Lisa, Dirk Poelman, Philippe Smet, et al. “Microscopic Study of Dopant Distribution in Europium Doped SrGa2S4 : Impact on Thermal Quenching and Phosphor Performance.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 7.1 (2018): R3052–R3056. Print.