2 x 56 Gbps electroabsorption modulated III-V-on-silicon DFB laser
- Author
- Amin Abbasi (UGent) , Leili Abdollahi Shiramin (UGent) , Bart Moeneclaey (UGent) , Jochem Verbist, Xin Yin (UGent) , Johan Bauwelinck (UGent) , Dries Van Thourhout (UGent) , Günther Roelkens (UGent) and Geert Morthier (UGent)
- Organization
- Project
- Abstract
- We present an InP-on-Si DFB laser integrated with electro-absorption modulators on each side, using a single epitaxial structure for laser and modulators. Two electrically isolated tapers couple the light to the Si waveguide, while simultaneously acting as modulators.
Downloads
-
pub 2107a.pdf
- full text (Accepted manuscript)
- |
- open access
- |
- |
- 426.26 KB
-
(...).pdf
- full text (Published version)
- |
- UGent only
- |
- |
- 434.69 KB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8539535
- MLA
- Abbasi, Amin, et al. “2 x 56 Gbps Electroabsorption Modulated III-V-on-Silicon DFB Laser.” 43rd European Conference on Optical Communication (ECOC 2017), IEEE, 2017, doi:10.1109/ECOC.2017.8345867.
- APA
- Abbasi, A., Abdollahi Shiramin, L., Moeneclaey, B., Verbist, J., Yin, X., Bauwelinck, J., … Morthier, G. (2017). 2 x 56 Gbps electroabsorption modulated III-V-on-silicon DFB laser. 43rd European Conference on Optical Communication (ECOC 2017). Presented at the 43rd European Conference on Optical Communication (ECOC), Gothenburg. Sweden. https://doi.org/10.1109/ECOC.2017.8345867
- Chicago author-date
- Abbasi, Amin, Leili Abdollahi Shiramin, Bart Moeneclaey, Jochem Verbist, Xin Yin, Johan Bauwelinck, Dries Van Thourhout, Günther Roelkens, and Geert Morthier. 2017. “2 x 56 Gbps Electroabsorption Modulated III-V-on-Silicon DFB Laser.” In 43rd European Conference on Optical Communication (ECOC 2017). IEEE. https://doi.org/10.1109/ECOC.2017.8345867.
- Chicago author-date (all authors)
- Abbasi, Amin, Leili Abdollahi Shiramin, Bart Moeneclaey, Jochem Verbist, Xin Yin, Johan Bauwelinck, Dries Van Thourhout, Günther Roelkens, and Geert Morthier. 2017. “2 x 56 Gbps Electroabsorption Modulated III-V-on-Silicon DFB Laser.” In 43rd European Conference on Optical Communication (ECOC 2017). IEEE. doi:10.1109/ECOC.2017.8345867.
- Vancouver
- 1.Abbasi A, Abdollahi Shiramin L, Moeneclaey B, Verbist J, Yin X, Bauwelinck J, et al. 2 x 56 Gbps electroabsorption modulated III-V-on-silicon DFB laser. In: 43rd European Conference on Optical Communication (ECOC 2017). IEEE; 2017.
- IEEE
- [1]A. Abbasi et al., “2 x 56 Gbps electroabsorption modulated III-V-on-silicon DFB laser,” in 43rd European Conference on Optical Communication (ECOC 2017), Gothenburg. Sweden, 2017.
@inproceedings{8539535,
abstract = {{We present an InP-on-Si DFB laser integrated with electro-absorption modulators on each side, using a single epitaxial structure for laser and modulators. Two electrically isolated tapers couple the light to the Si waveguide, while simultaneously acting as modulators.}},
articleno = {{M.2.C.3}},
author = {{Abbasi, Amin and Abdollahi Shiramin, Leili and Moeneclaey, Bart and Verbist, Jochem and Yin, Xin and Bauwelinck, Johan and Van Thourhout, Dries and Roelkens, Günther and Morthier, Geert}},
booktitle = {{43rd European Conference on Optical Communication (ECOC 2017)}},
isbn = {{9781538656242}},
language = {{eng}},
location = {{Gothenburg. Sweden}},
pages = {{3}},
publisher = {{IEEE}},
title = {{2 x 56 Gbps electroabsorption modulated III-V-on-silicon DFB laser}},
url = {{http://doi.org/10.1109/ECOC.2017.8345867}},
year = {{2017}},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: