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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

(2017) IEEE ELECTRON DEVICE LETTERS. 38(3). p.371-374
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Keywords
AlGaN/GaN, SBD, time-dependent breakdown, high temperature reverse bias (HTRB), Si3N4, leakage

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Citation

Please use this url to cite or link to this publication:

Chicago
Hu, Jie, Steve Stoffels, Ming Zhao, Andrea Natale Tallarico, Isabella Rossetto, Matteo Meneghini, Xuanwu Kang, et al. 2017. “Time-dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests.” Ieee Electron Device Letters 38 (3): 371–374.
APA
Hu, Jie, Stoffels, S., Zhao, M., Tallarico, A. N., Rossetto, I., Meneghini, M., Kang, X., et al. (2017). Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests. IEEE ELECTRON DEVICE LETTERS, 38(3), 371–374.
Vancouver
1.
Hu J, Stoffels S, Zhao M, Tallarico AN, Rossetto I, Meneghini M, et al. Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests. IEEE ELECTRON DEVICE LETTERS. Institute of Electrical and Electronics Engineers (IEEE); 2017;38(3):371–4.
MLA
Hu, Jie et al. “Time-dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests.” IEEE ELECTRON DEVICE LETTERS 38.3 (2017): 371–374. Print.
@article{8537224,
  author       = {Hu, Jie and Stoffels, Steve and Zhao, Ming and Tallarico, Andrea Natale and Rossetto, Isabella and Meneghini, Matteo and Kang, Xuanwu and Bakeroot, Benoit and Marcon, Denis and Kaczer, Ben and Decoutere, Stefaan and Groeseneken, Guido},
  issn         = {0741-3106},
  journal      = {IEEE ELECTRON DEVICE LETTERS},
  keywords     = {AlGaN/GaN,SBD,time-dependent breakdown,high temperature reverse bias (HTRB),Si3N4,leakage},
  language     = {eng},
  number       = {3},
  pages        = {371--374},
  publisher    = {Institute of Electrical and Electronics Engineers (IEEE)},
  title        = {Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests},
  url          = {http://dx.doi.org/10.1109/led.2017.2661482},
  volume       = {38},
  year         = {2017},
}

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