Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
- Author
- Jie Hu, Steve Stoffels, Ming Zhao, Andrea Natale Tallarico, Isabella Rossetto, Matteo Meneghini, Xuanwu Kang, Benoit Bakeroot (UGent) , Denis Marcon, Ben Kaczer, Stefaan Decoutere and Guido Groeseneken
- Organization
- Abstract
- In this letter, we investigate the time dependent breakdown mechanisms in edge terminated AlGaN/GaN lateral Schottky diodes under high-temperature reversebias (HTRB) tests. Thanks to acombined experimental/simulation analysis, we ascribe the device failure to two distinct time-sequential breakdown mechanisms caused by a localized electric field peak at the edge termination corner. In particular, the combined effect of high electric field and temperature causes a first breakdown of the plasma enhanced atomic layer deposition (PEALD)-Si3N4 followed by a second one in the AlGaN barrier. To validate this hypothesis, a 2-D TCAD simulator was used, and the breakdown path in Si3N4 was modeled by an inclusion of a narrow metal filament. The electrical simulations well reproduce the characteristics of the fresh and degraded GaN diodes. Finally, we demonstrate that the diode reliability under HTRB tests can be significantly improved by using a metalorganic chemical vapor deposition (MOCVD)-Si3N4 dielectric in the edge termination. This reliability improvement is related to a better material quality of MOCVD-Si3N4, showing a higher breakdown field compared with the PEALD-Si3N4.
- Keywords
- AlGaN/GaN, SBD, time-dependent breakdown, high temperature reverse bias (HTRB), Si3N4, leakage
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8537224
- MLA
- Hu, Jie, et al. “Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes under HTRB Tests.” IEEE ELECTRON DEVICE LETTERS, vol. 38, no. 3, 2017, pp. 371–74, doi:10.1109/led.2017.2661482.
- APA
- Hu, J., Stoffels, S., Zhao, M., Tallarico, A. N., Rossetto, I., Meneghini, M., … Groeseneken, G. (2017). Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests. IEEE ELECTRON DEVICE LETTERS, 38(3), 371–374. https://doi.org/10.1109/led.2017.2661482
- Chicago author-date
- Hu, Jie, Steve Stoffels, Ming Zhao, Andrea Natale Tallarico, Isabella Rossetto, Matteo Meneghini, Xuanwu Kang, et al. 2017. “Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes under HTRB Tests.” IEEE ELECTRON DEVICE LETTERS 38 (3): 371–74. https://doi.org/10.1109/led.2017.2661482.
- Chicago author-date (all authors)
- Hu, Jie, Steve Stoffels, Ming Zhao, Andrea Natale Tallarico, Isabella Rossetto, Matteo Meneghini, Xuanwu Kang, Benoit Bakeroot, Denis Marcon, Ben Kaczer, Stefaan Decoutere, and Guido Groeseneken. 2017. “Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes under HTRB Tests.” IEEE ELECTRON DEVICE LETTERS 38 (3): 371–374. doi:10.1109/led.2017.2661482.
- Vancouver
- 1.Hu J, Stoffels S, Zhao M, Tallarico AN, Rossetto I, Meneghini M, et al. Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests. IEEE ELECTRON DEVICE LETTERS. 2017;38(3):371–4.
- IEEE
- [1]J. Hu et al., “Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests,” IEEE ELECTRON DEVICE LETTERS, vol. 38, no. 3, pp. 371–374, 2017.
@article{8537224,
abstract = {{In this letter, we investigate the time dependent breakdown mechanisms in edge terminated AlGaN/GaN lateral Schottky diodes under high-temperature reversebias (HTRB) tests. Thanks to acombined experimental/simulation analysis, we ascribe the device failure to two distinct time-sequential breakdown mechanisms caused by a localized electric field peak at the edge termination corner. In particular, the combined effect of high electric field and temperature causes a first breakdown of the plasma enhanced atomic layer deposition (PEALD)-Si3N4 followed by a second one in the AlGaN barrier. To validate this hypothesis, a 2-D TCAD simulator was used, and the breakdown path in Si3N4 was modeled by an inclusion of a narrow metal filament. The electrical simulations well reproduce the characteristics of the fresh and degraded GaN diodes. Finally, we demonstrate that the diode reliability under HTRB tests can be significantly improved by using a metalorganic chemical vapor deposition (MOCVD)-Si3N4 dielectric in the edge termination. This reliability improvement is related to a better material quality of MOCVD-Si3N4, showing a higher breakdown field compared with the PEALD-Si3N4.}},
author = {{Hu, Jie and Stoffels, Steve and Zhao, Ming and Tallarico, Andrea Natale and Rossetto, Isabella and Meneghini, Matteo and Kang, Xuanwu and Bakeroot, Benoit and Marcon, Denis and Kaczer, Ben and Decoutere, Stefaan and Groeseneken, Guido}},
issn = {{0741-3106}},
journal = {{IEEE ELECTRON DEVICE LETTERS}},
keywords = {{AlGaN/GaN,SBD,time-dependent breakdown,high temperature reverse bias (HTRB),Si3N4,leakage}},
language = {{eng}},
number = {{3}},
pages = {{371--374}},
title = {{Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests}},
url = {{http://doi.org/10.1109/led.2017.2661482}},
volume = {{38}},
year = {{2017}},
}
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