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V2O5 : a 2D van der Waals Oxide with strong In-plane electrical and optical anisotropy

Sukrit Sucharitaku, Gaihua Ye, Walter Lambrecht, Churna Bhandari, Axel Gross, Rui He, Hilde Poelman UGent and Xuan Gao (2017) ACS APPLIED MATERIALS & INTERFACES. 9(28). p.23949-23956
abstract
V2O5 with a layered van der Waals (vdW) structure has been widely studied because of the material’s potential in applications such as battery electrodes. In this work, microelectronic devices were fabricated to study the electrical and optical properties of mechanically exfoliated multilayered V2O5 flakes. Raman spectroscopy was used to determine the crystal structure axes of the nanoflakes and revealed that the intensities of the Raman modes depend strongly on the relative orientation between the crystal axes and the polarization directions of incident/scattered light. Angular dependence of four-probe resistance measured in the van der Pauw (vdP) configuration revealed an in-plane anisotropic resistance ratio of ∼100 between the a and b crystal axes, the largest in-plane transport anisotropy effect experimentally reported for two-dimensional (2D) materials to date. This very large resistance anisotropic ratio is explained by the nonuniform current flow in the vdP measurement and an intrinsic mobility anisotropy ratio of 10 between the a and b crystal axes. Room-temperature electron Hall mobility up to 7 cm2 /(V s) along the high-mobility direction was obtained. This work demonstrates V2O5 as a layered 2D vdW oxide material with strongly anisotropic optical and electronic properties for novel applications.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
keyword
TRANSITION-METAL DICHALCOGENIDES, FIELD-EFFECT TRANSISTORS, PULSED-LASER DEPOSITION, THIN-FILMS, VANADIUM PENTOXIDE, BLACK PHOSPHORUS, MOS2 TRANSISTORS, HIGH-PERFORMANCE, HIGH-MOBILITY, SEMICONDUCTOR
journal title
ACS APPLIED MATERIALS & INTERFACES
volume
9
issue
28
pages
23949 - 23956
Web of Science type
Article
Web of Science id
000406172700074
ISSN
1944-8244
DOI
10.1021/acsami.7b05377
language
English
UGent publication?
yes
classification
A1
id
8536752
handle
http://hdl.handle.net/1854/LU-8536752
date created
2017-11-09 12:28:28
date last changed
2017-11-14 07:43:32
@article{8536752,
  abstract     = {V2O5 with a layered van der Waals (vdW) structure has been widely studied because of the material{\textquoteright}s
potential in applications such as battery electrodes. In this work, microelectronic devices were fabricated to study the electrical and optical properties of mechanically exfoliated multilayered V2O5 flakes. Raman spectroscopy was used to
determine the crystal structure axes of the nanoflakes and revealed that the intensities of the Raman modes depend strongly on the relative orientation between the crystal axes and the polarization directions of incident/scattered light. Angular dependence of four-probe resistance measured in the van der Pauw (vdP) configuration revealed an in-plane anisotropic resistance ratio of \ensuremath{\sim}100 between the a and b crystal axes, the largest in-plane transport anisotropy effect experimentally reported for two-dimensional (2D) materials to date. This very large resistance anisotropic ratio is explained by the nonuniform current flow in the vdP measurement and an intrinsic mobility anisotropy ratio of 10 between the a and b crystal axes. Room-temperature electron Hall mobility up to 7 cm2 /(V s) along the high-mobility direction was obtained. This work demonstrates V2O5 as a layered 2D vdW oxide material with strongly anisotropic optical and electronic properties for novel applications.},
  author       = {Sucharitaku, Sukrit and Ye, Gaihua and Lambrecht, Walter and Bhandari, Churna and Gross, Axel and He, Rui and Poelman, Hilde and Gao, Xuan},
  issn         = {1944-8244 },
  journal      = {ACS APPLIED MATERIALS \& INTERFACES},
  keyword      = {TRANSITION-METAL DICHALCOGENIDES,FIELD-EFFECT TRANSISTORS,PULSED-LASER DEPOSITION,THIN-FILMS,VANADIUM PENTOXIDE,BLACK PHOSPHORUS,MOS2 TRANSISTORS,HIGH-PERFORMANCE,HIGH-MOBILITY,SEMICONDUCTOR},
  language     = {eng},
  number       = {28},
  pages        = {23949--23956},
  title        = {V2O5 : a 2D van der Waals Oxide with strong In-plane electrical and optical anisotropy},
  url          = {http://dx.doi.org/10.1021/acsami.7b05377},
  volume       = {9},
  year         = {2017},
}

Chicago
Sucharitaku, Sukrit, Gaihua Ye, Walter Lambrecht, Churna Bhandari, Axel Gross, Rui He, Hilde Poelman, and Xuan Gao. 2017. “V2O5 : a 2D Van Der Waals Oxide with Strong In-plane Electrical and Optical Anisotropy.” Acs Applied Materials & Interfaces 9 (28): 23949–23956.
APA
Sucharitaku, S., Ye, G., Lambrecht, W., Bhandari, C., Gross, A., He, R., Poelman, H., et al. (2017). V2O5 : a 2D van der Waals Oxide with strong In-plane electrical and optical anisotropy. ACS APPLIED MATERIALS & INTERFACES, 9(28), 23949–23956.
Vancouver
1.
Sucharitaku S, Ye G, Lambrecht W, Bhandari C, Gross A, He R, et al. V2O5 : a 2D van der Waals Oxide with strong In-plane electrical and optical anisotropy. ACS APPLIED MATERIALS & INTERFACES. 2017;9(28):23949–56.
MLA
Sucharitaku, Sukrit, Gaihua Ye, Walter Lambrecht, et al. “V2O5 : a 2D Van Der Waals Oxide with Strong In-plane Electrical and Optical Anisotropy.” ACS APPLIED MATERIALS & INTERFACES 9.28 (2017): 23949–23956. Print.