Formation of ultrathin, stable and epitaxial silicides for semiconductor contacts
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- Filip Geenen (UGent) , C Mocuta and Christophe Detavernier (UGent)
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8536312
- MLA
- Geenen, Filip, et al. “Formation of Ultrathin, Stable and Epitaxial Silicides for Semiconductor Contacts.” 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, edited by Yu-Long Jiang and Ru Huang, IEEE, 2016, doi:10.1109/icsict.2016.7998963.
- APA
- Geenen, F., Mocuta, C., & Detavernier, C. (2016). Formation of ultrathin, stable and epitaxial silicides for semiconductor contacts. In Y.-L. Jiang & R. Huang (Eds.), 2016 13th IEEE international conference on solid-state and integrated circuit technology (ICSICT) proceedings. https://doi.org/10.1109/icsict.2016.7998963
- Chicago author-date
- Geenen, Filip, C Mocuta, and Christophe Detavernier. 2016. “Formation of Ultrathin, Stable and Epitaxial Silicides for Semiconductor Contacts.” In 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, edited by Yu-Long Jiang and Ru Huang. Piscataway, NJ, USA: IEEE. https://doi.org/10.1109/icsict.2016.7998963.
- Chicago author-date (all authors)
- Geenen, Filip, C Mocuta, and Christophe Detavernier. 2016. “Formation of Ultrathin, Stable and Epitaxial Silicides for Semiconductor Contacts.” In 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, ed by. Yu-Long Jiang and Ru Huang. Piscataway, NJ, USA: IEEE. doi:10.1109/icsict.2016.7998963.
- Vancouver
- 1.Geenen F, Mocuta C, Detavernier C. Formation of ultrathin, stable and epitaxial silicides for semiconductor contacts. In: Jiang Y-L, Huang R, editors. 2016 13th IEEE international conference on solid-state and integrated circuit technology (ICSICT) proceedings. Piscataway, NJ, USA: IEEE; 2016.
- IEEE
- [1]F. Geenen, C. Mocuta, and C. Detavernier, “Formation of ultrathin, stable and epitaxial silicides for semiconductor contacts,” in 2016 13th IEEE international conference on solid-state and integrated circuit technology (ICSICT) proceedings, Hangzhou, PR China, 2016.
@inproceedings{8536312,
author = {{Geenen, Filip and Mocuta, C and Detavernier, Christophe}},
booktitle = {{2016 13th IEEE international conference on solid-state and integrated circuit technology (ICSICT) proceedings}},
editor = {{Jiang, Yu-Long and Huang, Ru}},
isbn = {{9781467397179}},
language = {{eng}},
location = {{Hangzhou, PR China}},
pages = {{3}},
publisher = {{IEEE}},
title = {{Formation of ultrathin, stable and epitaxial silicides for semiconductor contacts}},
url = {{http://doi.org/10.1109/icsict.2016.7998963}},
year = {{2016}},
}
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