Band engineering of the Si(001):H surface by doping with P and B atoms
- Author
- Hiroyo Kawai, Kuan Eng Johnson Goh, Mark Saeys (UGent) and Christian Joachim
- Organization
- Abstract
- Si(001):H surfaces doped with phosphorus (P) and with boron (B) were explored as conducting contact pads for a dangling bond (DB) wire. Heavily doped Si(001): H surface patches are proposed as an alternative to metallic nano-islands or as an intermediate scale between the DB wire and the metallic islands to precisely contact a DB wire. Our calculations show that patches of B dopants incorporated in Si(001): H surface introduce states in the surface band gap with a significant dispersion along the dimer rows and which overlap well with the DB wire band states, demonstrating the possibility of using patches a B-doped Si(001): H as viable and robust contact pads for DB wires.
- Keywords
- INITIO MOLECULAR-DYNAMICS, TOTAL-ENERGY CALCULATIONS, WAVE BASIS-SET, METALS
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8533982
- MLA
- Kawai, Hiroyo, et al. “Band Engineering of the Si(001):H Surface by Doping with P and B Atoms.” ON-SURFACE ATOMIC WIRES AND LOGIC GATES, edited by M. Kolmer and C. Joachim, Springer International Publishing, 2017, pp. 95–104, doi:10.1007/978-3-319-51847-3_6.
- APA
- Kawai, H., Goh, K. E. J., Saeys, M., & Joachim, C. (2017). Band engineering of the Si(001):H surface by doping with P and B atoms. In M. Kolmer & C. Joachim (Eds.), ON-SURFACE ATOMIC WIRES AND LOGIC GATES (pp. 95–104). https://doi.org/10.1007/978-3-319-51847-3_6
- Chicago author-date
- Kawai, Hiroyo, Kuan Eng Johnson Goh, Mark Saeys, and Christian Joachim. 2017. “Band Engineering of the Si(001):H Surface by Doping with P and B Atoms.” In ON-SURFACE ATOMIC WIRES AND LOGIC GATES, edited by M. Kolmer and C. Joachim, 95–104. Springer International Publishing. https://doi.org/10.1007/978-3-319-51847-3_6.
- Chicago author-date (all authors)
- Kawai, Hiroyo, Kuan Eng Johnson Goh, Mark Saeys, and Christian Joachim. 2017. “Band Engineering of the Si(001):H Surface by Doping with P and B Atoms.” In ON-SURFACE ATOMIC WIRES AND LOGIC GATES, ed by. M. Kolmer and C. Joachim, 95–104. Springer International Publishing. doi:10.1007/978-3-319-51847-3_6.
- Vancouver
- 1.Kawai H, Goh KEJ, Saeys M, Joachim C. Band engineering of the Si(001):H surface by doping with P and B atoms. In: Kolmer M, Joachim C, editors. ON-SURFACE ATOMIC WIRES AND LOGIC GATES. Springer International Publishing; 2017. p. 95–104.
- IEEE
- [1]H. Kawai, K. E. J. Goh, M. Saeys, and C. Joachim, “Band engineering of the Si(001):H surface by doping with P and B atoms,” in ON-SURFACE ATOMIC WIRES AND LOGIC GATES, Krakow, POLAND, 2017, pp. 95–104.
@inproceedings{8533982,
abstract = {{Si(001):H surfaces doped with phosphorus (P) and with boron (B) were explored as conducting contact pads for a dangling bond (DB) wire. Heavily doped Si(001): H surface patches are proposed as an alternative to metallic nano-islands or as an intermediate scale between the DB wire and the metallic islands to precisely contact a DB wire. Our calculations show that patches of B dopants incorporated in Si(001): H surface introduce states in the surface band gap with a significant dispersion along the dimer rows and which overlap well with the DB wire band states, demonstrating the possibility of using patches a B-doped Si(001): H as viable and robust contact pads for DB wires.}},
author = {{Kawai, Hiroyo and Goh, Kuan Eng Johnson and Saeys, Mark and Joachim, Christian}},
booktitle = {{ON-SURFACE ATOMIC WIRES AND LOGIC GATES}},
editor = {{Kolmer, M. and Joachim, C.}},
isbn = {{9783319518466}},
issn = {{2193-9691}},
keywords = {{INITIO MOLECULAR-DYNAMICS,TOTAL-ENERGY CALCULATIONS,WAVE BASIS-SET,METALS}},
language = {{eng}},
location = {{Krakow, POLAND}},
pages = {{95--104}},
publisher = {{Springer International Publishing}},
title = {{Band engineering of the Si(001):H surface by doping with P and B atoms}},
url = {{http://doi.org/10.1007/978-3-319-51847-3_6}},
year = {{2017}},
}
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