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Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2

(2017) AIP ADVANCES. 7(5).
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Abstract
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\CoFe(B) interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\Ta bilayer deposited on amorphous high-kappa dielectric (relative permittivity kappa=20) HfO2, grown by atomic layer deposition (ALD). PMA with interfacial anisotropy energy K-i up to 0.49 mJ/m(2) appears after annealing the stacks between 200 degrees C and 350 degrees C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350 degrees C coincides with the onset of interdiffusion in the materials. High-kappa dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA). The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-kappa dielectrics.

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Chicago
Vermeulen, Bart F, Jackson Wu, Johan Swerts, Sebastien Couet, Iuliana P Radu, Guido Groeseneken, Christophe Detavernier, et al. 2017. “Perpendicular Magnetic Anisotropy of CoFeB\Ta Bilayers on ALD HfO2.” Aip Advances 7 (5).
APA
Vermeulen, B. F., Wu, J., Swerts, J., Couet, S., Radu, I. P., Groeseneken, G., Detavernier, C., et al. (2017). Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2. AIP ADVANCES, 7(5). Presented at the 61st Annual conference on Magnetism and Magnetic Materials (MMM).
Vancouver
1.
Vermeulen BF, Wu J, Swerts J, Couet S, Radu IP, Groeseneken G, et al. Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2. AIP ADVANCES. 2017;7(5).
MLA
Vermeulen, Bart F, Jackson Wu, Johan Swerts, et al. “Perpendicular Magnetic Anisotropy of CoFeB\Ta Bilayers on ALD HfO2.” AIP ADVANCES 7.5 (2017): n. pag. Print.
@article{8531370,
  abstract     = {Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO{\textbackslash}CoFe(B) interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB{\textbackslash}Ta bilayer deposited on amorphous high-kappa dielectric (relative permittivity kappa=20) HfO2, grown by atomic layer deposition (ALD). PMA with interfacial anisotropy energy K-i up to 0.49 mJ/m(2) appears after annealing the stacks between 200 degrees C and 350 degrees C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350 degrees C coincides with the onset of interdiffusion in the materials. High-kappa dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA). The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-kappa dielectrics.},
  articleno    = {055933},
  author       = {Vermeulen, Bart F and Wu, Jackson and Swerts, Johan and Couet, Sebastien and Radu, Iuliana P and Groeseneken, Guido and Detavernier, Christophe and Jochum, Johanna K and Van Bael, Margriet and Temst, Kristiaan and Shukla, Amit and Miwa, Shinji and Suzuki, Yoshishige and Martens, Koen},
  issn         = {2158-3226},
  journal      = {AIP ADVANCES},
  language     = {eng},
  location     = {New Orleans, LA, USA},
  number       = {5},
  pages        = {6},
  title        = {Perpendicular magnetic anisotropy of CoFeB{\textbackslash}Ta bilayers on ALD HfO2},
  url          = {http://dx.doi.org/10.1063/1.4978007},
  volume       = {7},
  year         = {2017},
}

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