Ghent University Academic Bibliography

Advanced

Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2

Bart F Vermeulen, Jackson Wu, Johan Swerts, Sebastien Couet, Iuliana P Radu, Guido Groeseneken, Christophe Detavernier UGent, Johanna K Jochum, Margriet Van Bael, Kristiaan Temst, et al. (2017) AIP ADVANCES. 7(5).
abstract
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\CoFe(B) interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\Ta bilayer deposited on amorphous high-kappa dielectric (relative permittivity kappa=20) HfO2, grown by atomic layer deposition (ALD). PMA with interfacial anisotropy energy K-i up to 0.49 mJ/m(2) appears after annealing the stacks between 200 degrees C and 350 degrees C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350 degrees C coincides with the onset of interdiffusion in the materials. High-kappa dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA). The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-kappa dielectrics.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
journal title
AIP ADVANCES
AIP Adv.
volume
7
issue
5
article number
055933
pages
6 pages
conference name
61st Annual conference on Magnetism and Magnetic Materials (MMM)
conference location
New Orleans, LA, USA
conference start
2016-10-31
conference end
2016-11-04
Web of Science type
Article; Proceedings Paper
Web of Science id
000402797100153
ISSN
2158-3226
DOI
10.1063/1.4978007
language
English
UGent publication?
yes
classification
A1
copyright statement
I have retained and own the full copyright for this publication
id
8531370
handle
http://hdl.handle.net/1854/LU-8531370
date created
2017-09-16 07:57:27
date last changed
2017-11-07 10:24:30
@article{8531370,
  abstract     = {Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO{\textbackslash}CoFe(B) interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB{\textbackslash}Ta bilayer deposited on amorphous high-kappa dielectric (relative permittivity kappa=20) HfO2, grown by atomic layer deposition (ALD). PMA with interfacial anisotropy energy K-i up to 0.49 mJ/m(2) appears after annealing the stacks between 200 degrees C and 350 degrees C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350 degrees C coincides with the onset of interdiffusion in the materials. High-kappa dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA). The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-kappa dielectrics.},
  articleno    = {055933},
  author       = {Vermeulen, Bart F and Wu, Jackson and Swerts, Johan and Couet, Sebastien and Radu, Iuliana P and Groeseneken, Guido and Detavernier, Christophe and Jochum, Johanna K and Van Bael, Margriet and Temst, Kristiaan and Shukla, Amit and Miwa, Shinji and Suzuki, Yoshishige and Martens, Koen},
  issn         = {2158-3226},
  journal      = {AIP ADVANCES},
  language     = {eng},
  location     = {New Orleans, LA, USA},
  number       = {5},
  pages        = {6},
  title        = {Perpendicular magnetic anisotropy of CoFeB{\textbackslash}Ta bilayers on ALD HfO2},
  url          = {http://dx.doi.org/10.1063/1.4978007},
  volume       = {7},
  year         = {2017},
}

Chicago
Vermeulen, Bart F, Jackson Wu, Johan Swerts, Sebastien Couet, Iuliana P Radu, Guido Groeseneken, Christophe Detavernier, et al. 2017. “Perpendicular Magnetic Anisotropy of CoFeB\Ta Bilayers on ALD HfO2.” Aip Advances 7 (5).
APA
Vermeulen, B. F., Wu, J., Swerts, J., Couet, S., Radu, I. P., Groeseneken, G., Detavernier, C., et al. (2017). Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2. AIP ADVANCES, 7(5). Presented at the 61st Annual conference on Magnetism and Magnetic Materials (MMM).
Vancouver
1.
Vermeulen BF, Wu J, Swerts J, Couet S, Radu IP, Groeseneken G, et al. Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2. AIP ADVANCES. 2017;7(5).
MLA
Vermeulen, Bart F, Jackson Wu, Johan Swerts, et al. “Perpendicular Magnetic Anisotropy of CoFeB\Ta Bilayers on ALD HfO2.” AIP ADVANCES 7.5 (2017): n. pag. Print.