Advanced search
1 file | 3.62 MB

Te-based chalcogenide materials for selector applications

Author
Organization
Abstract
The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 x 55 nm(2), were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability.
Keywords
PHASE-CHANGE MATERIALS, GLASS-TRANSITION TEMPERATURES, BIPOLAR RRAM, SELECTOR, CRYSTALLIZATION BEHAVIOR, AMORPHOUS-CHALCOGENIDE, DATA-STORAGE, THIN-FILMS, GE-SE, ALLOYS, THRESHOLD

Downloads

  • 2017S - Velea - Scientific Reports - selector.pdf
    • full text
    • |
    • open access
    • |
    • PDF
    • |
    • 3.62 MB

Citation

Please use this url to cite or link to this publication:

Chicago
Velea, A, K Opsomer, Wouter Devulder, Jan Dumortier, J Fan, Christophe Detavernier, M Jurczak, and B Govoreanu. 2017. “Te-based Chalcogenide Materials for Selector Applications.” Scientific Reports 7.
APA
Velea, A., Opsomer, K., Devulder, W., Dumortier, J., Fan, J., Detavernier, C., Jurczak, M., et al. (2017). Te-based chalcogenide materials for selector applications. SCIENTIFIC REPORTS, 7.
Vancouver
1.
Velea A, Opsomer K, Devulder W, Dumortier J, Fan J, Detavernier C, et al. Te-based chalcogenide materials for selector applications. SCIENTIFIC REPORTS. 2017;7.
MLA
Velea, A, K Opsomer, Wouter Devulder, et al. “Te-based Chalcogenide Materials for Selector Applications.” SCIENTIFIC REPORTS 7 (2017): n. pag. Print.
@article{8531364,
  abstract     = {The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 x 55 nm(2), were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability.},
  articleno    = {8103},
  author       = {Velea, A and Opsomer, K and Devulder, Wouter and Dumortier, Jan and Fan, J and Detavernier, Christophe and Jurczak, M and Govoreanu, B},
  issn         = {2045-2322},
  journal      = {SCIENTIFIC REPORTS},
  language     = {eng},
  pages        = {12},
  title        = {Te-based chalcogenide materials for selector applications},
  url          = {http://dx.doi.org/10.1038/s41598-017-08251-z},
  volume       = {7},
  year         = {2017},
}

Altmetric
View in Altmetric
Web of Science
Times cited: