- Author
- A Velea, K Opsomer, Wouter Devulder (UGent) , Jan Dumortier (UGent) , J Fan, Christophe Detavernier (UGent) , M Jurczak and B Govoreanu
- Organization
- Abstract
- The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 x 55 nm(2), were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability.
- Keywords
- PHASE-CHANGE MATERIALS, GLASS-TRANSITION TEMPERATURES, BIPOLAR RRAM, SELECTOR, CRYSTALLIZATION BEHAVIOR, AMORPHOUS-CHALCOGENIDE, DATA-STORAGE, THIN-FILMS, GE-SE, ALLOYS, THRESHOLD
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8531364
- MLA
- Velea, A., et al. “Te-Based Chalcogenide Materials for Selector Applications.” SCIENTIFIC REPORTS, vol. 7, 2017, doi:10.1038/s41598-017-08251-z.
- APA
- Velea, A., Opsomer, K., Devulder, W., Dumortier, J., Fan, J., Detavernier, C., … Govoreanu, B. (2017). Te-based chalcogenide materials for selector applications. SCIENTIFIC REPORTS, 7. https://doi.org/10.1038/s41598-017-08251-z
- Chicago author-date
- Velea, A, K Opsomer, Wouter Devulder, Jan Dumortier, J Fan, Christophe Detavernier, M Jurczak, and B Govoreanu. 2017. “Te-Based Chalcogenide Materials for Selector Applications.” SCIENTIFIC REPORTS 7. https://doi.org/10.1038/s41598-017-08251-z.
- Chicago author-date (all authors)
- Velea, A, K Opsomer, Wouter Devulder, Jan Dumortier, J Fan, Christophe Detavernier, M Jurczak, and B Govoreanu. 2017. “Te-Based Chalcogenide Materials for Selector Applications.” SCIENTIFIC REPORTS 7. doi:10.1038/s41598-017-08251-z.
- Vancouver
- 1.Velea A, Opsomer K, Devulder W, Dumortier J, Fan J, Detavernier C, et al. Te-based chalcogenide materials for selector applications. SCIENTIFIC REPORTS. 2017;7.
- IEEE
- [1]A. Velea et al., “Te-based chalcogenide materials for selector applications,” SCIENTIFIC REPORTS, vol. 7, 2017.
@article{8531364, abstract = {{The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 x 55 nm(2), were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability.}}, articleno = {{8103}}, author = {{Velea, A and Opsomer, K and Devulder, Wouter and Dumortier, Jan and Fan, J and Detavernier, Christophe and Jurczak, M and Govoreanu, B}}, issn = {{2045-2322}}, journal = {{SCIENTIFIC REPORTS}}, keywords = {{PHASE-CHANGE MATERIALS,GLASS-TRANSITION TEMPERATURES,BIPOLAR RRAM,SELECTOR,CRYSTALLIZATION BEHAVIOR,AMORPHOUS-CHALCOGENIDE,DATA-STORAGE,THIN-FILMS,GE-SE,ALLOYS,THRESHOLD}}, language = {{eng}}, pages = {{12}}, title = {{Te-based chalcogenide materials for selector applications}}, url = {{http://doi.org/10.1038/s41598-017-08251-z}}, volume = {{7}}, year = {{2017}}, }
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