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Integration of 50nm half pitch single damascene copper trenches in Black Diamond (R) II by means of double patterning 193nm immersion lithography on metal hardmask

J. Van Olmen, A. Al-Bayati, G. Beyer, P. Boelen, L. Carbonell, Kelvin Chan, I. Ciofi, M. Claes, A. Cockburn, G. Druais, et al.
(2008) ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007). In MATERIALS RESEARCH SOCIETY CONFERENCE PROCEEDINGS 23. p.355-361
Author
Organization
Abstract
In this paper we describe the successful integration of 50nm half pitch single damascene copper trenches in BD II (k=2.5) low-k dielectric on 300mm wafers, focusing on integration issues encountered during development.

Citation

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MLA
Van Olmen, J., et al. “Integration of 50nm Half Pitch Single Damascene Copper Trenches in Black Diamond (R) II by Means of Double Patterning 193nm Immersion Lithography on Metal Hardmask.” ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), vol. 23, Materials Research Soc, 2008, pp. 355–61.
APA
Van Olmen, J., Al-Bayati, A., Beyer, G., Boelen, P., Carbonell, L., Chan, K., … Noori, A. (2008). Integration of 50nm half pitch single damascene copper trenches in Black Diamond (R) II by means of double patterning 193nm immersion lithography on metal hardmask. ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), 23, 355–361. Warrendale: Materials Research Soc.
Chicago author-date
Van Olmen, J., A. Al-Bayati, G. Beyer, P. Boelen, L. Carbonell, Kelvin Chan, I. Ciofi, et al. 2008. “Integration of 50nm Half Pitch Single Damascene Copper Trenches in Black Diamond (R) II by Means of Double Patterning 193nm Immersion Lithography on Metal Hardmask.” In ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), 23:355–61. Warrendale: Materials Research Soc.
Chicago author-date (all authors)
Van Olmen, J., A. Al-Bayati, G. Beyer, P. Boelen, L. Carbonell, Kelvin Chan, I. Ciofi, M. Claes, A. Cockburn, G. Druais, D. Hendrickx, N. Heylen, E. Kesters, S. Lytle, Kavita Shah, Maaike Op de Beeck, H. Struyf, Zs. Tokei, J. Versluijs, Chao Zhao, and A. Noori. 2008. “Integration of 50nm Half Pitch Single Damascene Copper Trenches in Black Diamond (R) II by Means of Double Patterning 193nm Immersion Lithography on Metal Hardmask.” In ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), 23:355–361. Warrendale: Materials Research Soc.
Vancouver
1.
Van Olmen J, Al-Bayati A, Beyer G, Boelen P, Carbonell L, Chan K, et al. Integration of 50nm half pitch single damascene copper trenches in Black Diamond (R) II by means of double patterning 193nm immersion lithography on metal hardmask. In: ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007). Warrendale: Materials Research Soc; 2008. p. 355–61.
IEEE
[1]
J. Van Olmen et al., “Integration of 50nm half pitch single damascene copper trenches in Black Diamond (R) II by means of double patterning 193nm immersion lithography on metal hardmask,” in ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), Albany, NY, 2008, vol. 23, pp. 355–361.
@inproceedings{8530732,
  abstract     = {{In this paper we describe the successful integration of 50nm half pitch single damascene copper trenches in BD II (k=2.5) low-k dielectric on 300mm wafers, focusing on integration issues encountered during development.}},
  author       = {{Van Olmen, J. and Al-Bayati, A. and Beyer, G. and Boelen, P. and Carbonell, L. and Chan, Kelvin and Ciofi, I. and Claes, M. and Cockburn, A. and Druais, G. and Hendrickx, D. and Heylen, N. and Kesters, E. and Lytle, S. and Shah, Kavita and Op de Beeck, Maaike and Struyf, H. and Tokei, Zs. and Versluijs, J. and Zhao, Chao and Noori, A.}},
  booktitle    = {{ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007)}},
  isbn         = {{978-1-55899-992-3}},
  issn         = {{0886-7860}},
  language     = {{eng}},
  location     = {{Albany, NY}},
  pages        = {{355--361}},
  publisher    = {{Materials Research Soc}},
  title        = {{Integration of 50nm half pitch single damascene copper trenches in Black Diamond (R) II by means of double patterning 193nm immersion lithography on metal hardmask}},
  volume       = {{23}},
  year         = {{2008}},
}
Web of Science
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