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30nm half-pitch metal patterning using Motif (TM) CD shrink technique and double patterning - art. no. 69242C

Janko Versluijs, J-F. De Marneffe, Danny Goossens, Maaike Op de Beeck (UGent) , Tom Vandeweyer, Vincent Wiaux, Herbert Struyf, Mireille Maenhoudt, Mohand Brouri, Johan Vertommen, et al.
(2008) OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3. In ARRAY(0x86112b8) 6924. p.C9242-C9242
Author
Organization
Abstract
Double patterning lithography appears a likely candidate to bridge the gap between water-based immersion lithography and EUV. A double patterning process is discussed for 30nm half-pitch interconnect structures, using 1.2 NA immersion lithography combined with the Motif (TM) CD shrink technique. An adjusted OPC calculation is required to model the proximity effects of the Motif shrink technique and subsequent metal hard mask (MHM) etch, on top of the lithography based proximity effects. The litho-etch-litho-etch approach is selected to pattern a TiN metal hard mask. This mask is then used to etch the low-k dielectric. The various process steps and challenges encountered are discussed, with the feasibility of this approach demonstrated by successfully transferring a 30nm half-pitch pattern into the MHM.
Keywords
double patterning, CD shrink, Motif, single damascene, OPC, metal hard, mask

Citation

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MLA
Versluijs, Janko, et al. “30nm Half-Pitch Metal Patterning Using Motif (TM) CD Shrink Technique and Double Patterning - Art. No. 69242C.” OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, vol. 6924, Spie-int Soc Optical Engineering, 2008, pp. C9242–C9242, doi:10.1117/12.774139.
APA
Versluijs, J., De Marneffe, J.-F., Goossens, D., Op de Beeck, M., Vandeweyer, T., Wiaux, V., … Sadjadi, R. (2008). 30nm half-pitch metal patterning using Motif (TM) CD shrink technique and double patterning - art. no. 69242C. OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, 6924, C9242–C9242. https://doi.org/10.1117/12.774139
Chicago author-date
Versluijs, Janko, J-F. De Marneffe, Danny Goossens, Maaike Op de Beeck, Tom Vandeweyer, Vincent Wiaux, Herbert Struyf, et al. 2008. “30nm Half-Pitch Metal Patterning Using Motif (TM) CD Shrink Technique and Double Patterning - Art. No. 69242C.” In OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, 6924:C9242–C9242. Bellingham: Spie-int Soc Optical Engineering. https://doi.org/10.1117/12.774139.
Chicago author-date (all authors)
Versluijs, Janko, J-F. De Marneffe, Danny Goossens, Maaike Op de Beeck, Tom Vandeweyer, Vincent Wiaux, Herbert Struyf, Mireille Maenhoudt, Mohand Brouri, Johan Vertommen, Ji Soo Kim, Helen Zhu, and Reza Sadjadi. 2008. “30nm Half-Pitch Metal Patterning Using Motif (TM) CD Shrink Technique and Double Patterning - Art. No. 69242C.” In OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, 6924:C9242–C9242. Bellingham: Spie-int Soc Optical Engineering. doi:10.1117/12.774139.
Vancouver
1.
Versluijs J, De Marneffe J-F, Goossens D, Op de Beeck M, Vandeweyer T, Wiaux V, et al. 30nm half-pitch metal patterning using Motif (TM) CD shrink technique and double patterning - art. no. 69242C. In: OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3. Bellingham: Spie-int Soc Optical Engineering; 2008. p. C9242–C9242.
IEEE
[1]
J. Versluijs et al., “30nm half-pitch metal patterning using Motif (TM) CD shrink technique and double patterning - art. no. 69242C,” in OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, San Jose, CA, 2008, vol. 6924, pp. C9242–C9242.
@inproceedings{8530731,
  abstract     = {{Double patterning lithography appears a likely candidate to bridge the gap between water-based immersion lithography and EUV. A double patterning process is discussed for 30nm half-pitch interconnect structures, using 1.2 NA immersion lithography combined with the Motif (TM) CD shrink technique. An adjusted OPC calculation is required to model the proximity effects of the Motif shrink technique and subsequent metal hard mask (MHM) etch, on top of the lithography based proximity effects. The litho-etch-litho-etch approach is selected to pattern a TiN metal hard mask. This mask is then used to etch the low-k dielectric. The various process steps and challenges encountered are discussed, with the feasibility of this approach demonstrated by successfully transferring a 30nm half-pitch pattern into the MHM.}},
  author       = {{Versluijs, Janko and De Marneffe, J-F. and Goossens, Danny and Op de Beeck, Maaike and Vandeweyer, Tom and Wiaux, Vincent and Struyf, Herbert and Maenhoudt, Mireille and Brouri, Mohand and Vertommen, Johan and Kim, Ji Soo and Zhu, Helen and Sadjadi, Reza}},
  booktitle    = {{OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3}},
  isbn         = {{978-0-8194-7109-3}},
  issn         = {{0277-786X}},
  keywords     = {{double patterning,CD shrink,Motif,single damascene,OPC,metal hard,mask}},
  language     = {{eng}},
  location     = {{San Jose, CA}},
  pages        = {{C9242--C9242}},
  publisher    = {{Spie-int Soc Optical Engineering}},
  title        = {{30nm half-pitch metal patterning using Motif (TM) CD shrink technique and double patterning - art. no. 69242C}},
  url          = {{http://doi.org/10.1117/12.774139}},
  volume       = {{6924}},
  year         = {{2008}},
}
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